Scaled FerroelectrIc X-bars for AI-driven sensors and actuaTors

Información del proyecto

FIXIT

Identificador del acuerdo de subvención: 101135398

DOI

10.3030/101135398

Fecha de la firma de la CE 26 Octubre 2023

Fecha de inicio 1 Noviembre 2023

Fecha de finalización 30 Abril 2027

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 3 855 687,50

Aportación de la UE

€ 3 855 687,50

Coordinado por

NAMLAB GGMBH
Germany

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Documents, reports (2)

Initial SPICE model of target FSDs

Initial SPICE model delivery to T5.1

Teaching module prepared

A comprehensive slide set for teaching the PhD students will be compiled in a joint effort by all parnters.

Websites, patent fillings, videos etc. (1)

Project website

Project website established

Publicaciones

Peer reviewed articles (17)

Oxygen Doping in Ferroelectric Wurtzite‐type Al_0.73Sc_0.27N: Improved Leakage and Polarity Control

Autores: Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom‐Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu‐Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle
Publicado en: Advanced Electronic Materials, Edición 11, 2025, ISSN 2199-160X
Editor: Wiley
DOI: 10.1002/AELM.202400874

Weight update in ferroelectric memristors with identical and non-identical pulses

Autores: Suzanne Lancaster; Maximilien Remillieux; Moritz Engl; Viktor Havel; Cláudia Silva; Xuetao Wang; Thomas Mikolajick; Stefan Slesazeck
Publicado en: ACS Applied Materials, Edición 16, 2024, ISSN 1944-8244
Editor: American Chemical Society
DOI: 10.1021/ACSAMI.4C10338

Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications

Autores: Simon Fichtner, Georg Schönweger, Cheng-Wei Lee, Keisuke Yazawa, Prashun Gorai, Geoff L. Brennecka
Publicado en: Applied Physics Reviews, Edición 12, 2025, ISSN 1931-9401
Editor: AIP Publishing
DOI: 10.1063/5.0249265

Ferroelectric Al_1‐xSc_xN Opposite State Retention Model Based on Switching Dynamics

Autores: Roberto Guido, Maike Gremmel, Thomas Mikolajick, Simon Fichtner, Uwe Schroeder
Publicado en: Advanced Functional Materials, Edición 35, 2025, ISSN 1616-301X
Editor: Wiley
DOI: 10.1002/ADFM.202421793

Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects

Autores: Moritz Engl, Wassim Hamouda, Ines Häusler, Suzanne Lancaster, Luca Carpentieri, Thomas Mikolajick, Catherine Dubourdieu, Stefan Slesazeck
Publicado en: ACS Applied Materials & Interfaces, Edición 17, 2025, ISSN 1944-8244
Editor: American Chemical Society (ACS)
DOI: 10.48550/ARXIV.2503.11578

Interfacial Polarization Switching in Al _0.92 Sc _0.08 N/GaN Heterostructures Grown by Sputter Epitaxy

Autores: Niklas Wolff, Georg Schönweger, Md. Redwanul Islam, Ziming Ding, Christian Kübel, Simon Fichtner, Lorenz Kienle
Publicado en: Advanced Science, Edición 12, 2025, ISSN 2198-3844
Editor: Wiley
DOI: 10.1002/ADVS.202503827

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Autores: Georg Schönweger; Deik Dasenbrook; Niklas Kyoushi; Roberto Guido; Adrian Petraru; Thomas Mikolajick; Uwe Schröder; Hermann Kohlstedt; Simon Fichtner
Publicado en: Advanced Electronic Materials, 2025, ISSN 2199-160X
Editor: Wiley-VCH GmbH
DOI: 10.24406/PUBLICA-6918

Scientific Reports

Autores: Segatto, Mattia; Lizzit, Daniel; Esseni, David
Publicado en: Scientific Reports, 2025, ISSN 2045-2322
Editor: Nature Publishing Group
DOI: 10.1038/S41598-025-03469-8

Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight

Autores: M. Segatto, F. M. Puglisi, F. Driussi, D. Lizzit, L. Carpentieri, S. Slesazeck, T. Mikolajick, D. Esseni
Publicado en: IEEE Transactions on Electron Devices, Edición 73, 2026, ISSN 1557-9646
Editor: IEEE
DOI: 10.1109/TED.2026.3671219

A Novel Ferroelectric MemCapacitor Enabling Multilevel Operation

Autores: Lizzit, Daniel; Segatto, Mattia; Esseni, David
Publicado en: IEEE Transactions on Electron Devices, 2025, ISSN 1557-9646
Editor: IEEE
DOI: 10.1109/TED.2025.3526104

Comparative Study of Switching Dynamics in Ferroelectric-based Capacitors with Different Design Options

Autores: Driussi, Francesco; Rocco, Enrico; Massarotto, Marco; Lancaster, Suzanne; Slesazeck, Stefan; Mikolajick, Thomas; Esseni, David
Publicado en: 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), 2025, ISSN 2473-2001
Editor: IEEE Xplore Digital Library
DOI: 10.1109/ICMTS63811.2025.11068911

Al _1‐x Sc _x N‐Based Ferroelectric Domain‐Wall Memristors

Autores: Haidong Lu; Georg Schönweger; Niklas Wolff; Ziming Ding; Adrian Petraru; Isabel Streicher; Hermann Kohlstedt; Christian Kübel; Stefano Leone; Lorenz Kienle; Simon Fichtner; Alexei Gruverman
Publicado en: Advanced Functional Materials, 2025, ISSN 1616-3028
Editor: Wiley-VCH GmbH
DOI: 10.5445/IR/1000183697

Clarification of the spontaneous polarization direction in crystals with wurtzite structure

Autores: Simon Fichtner; Mohamed Yassine; Chris G. Van de Walle; Oliver Ambacher
Publicado en: Applied Physics Letters, Edición Volume 125, Edición 4, 2024, ISSN 1077-3118
Editor: American Institute of Physics
DOI: 10.1063/5.0217301

Electric field-induced domain structures in ferroelectric AlScN thin films

Autores: Niklas Wolff, Tim Grieb, Georg Schönweger, Florian F. Krause, Isabel Streicher, Stefano Leone, Andreas Rosenauer, Simon Fichtner, Lorenz Kienle
Publicado en: Journal of Applied Physics, Edición 137, 2025, ISSN 0021-8979
Editor: AIP Publishing
DOI: 10.1063/5.0244102

Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

Autores: Sara Vecchi, Francesco Maria Puglisi, Pascal Appelt, Roberto Guido, Xuetao Wang, Stefan Slesazeck, Thomas Mikolajick, Suzanne Lancaster
Publicado en: Advanced Electronic Materials, 2024, ISSN 2199-160X
Editor: Wiley
DOI: 10.1002/aelm.202400204

IEEE Journal of the Electron Devices Society

Autores: C. Rossi, D. Lizzit, C. V. Dijck, T. L. Phan, C. Dubourdieu and D. Esseni
Publicado en: IEEE Journal of the Electron Devices Society, ISSN 2168-6734
Editor: IEEE
DOI: 10.1109/JEDS.2026

Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation

Autores: Rossi, Chiara; Lizzit, Daniel; Esseni, David
Publicado en: 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2025, ISSN 2473-2001
Editor: IEEE
DOI: 10.1109/EDTM61175.2025.11040846

Conference proceedings (3)

Read Current in Ferroelectric Tunnel Junctions: Transient versus DC Contributions and Trap Related Effects

Autores: Francesco Driussi, Mattia Segatto, Marco Massarotto, Luca Carpentieri, Stefan Slesazeck, David Esseni
Publicado en: 2026 IEEE 38th International Conference on Microelectronic Test Structures (ICMTS), 2026
Editor: IEEE
DOI: 10.1109/ICMTS69943.2026.11471657

Nucleation-Limited-Switching Based Compact Models for Hf-Based Ferroelectric Devices and Their Applications in Memory Arrays

Autores: Chong Peng, Suzanne Lancaster, Luca Carpentieri, Athira Sunil, Thomas Mikolajick, Stefan Slesazeck
Publicado en: 2025 14th International Conference on Modern Circuits and Systems Technologies (MOCAST), 2025, ISSN 1557-9646
Editor: IEEE
DOI: 10.1109/MOCAST65744.2025.11083922

Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors

Autores: Marco Massarotto; Francesco Driussi; Mattia Bucovaz; Antonio Affanni; Suzanne Lancaster; Stefan Slesazeck; Thomas Mikolajick; David Esseni
Publicado en: 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS), 2024
Editor: IEEE
DOI: 10.1109/ICMTS59902.2024.10520684