Periodic Reporting for period 1 - HaloFreeEtch (Novel approaches for halogen-free and sustainable etching of Silicon and Glass)
Période du rapport: 2024-09-01 au 2025-08-31
The HaloFreeEtch project aims to revolutionize semiconductor manufacturing by environmentally friendly and sustainable etching processes for silicon and glass that eliminate the use of halogenated compounds.
Funded by the European Union, this innovative initiative brings together leading experts from academia, research institutions, and industry to address the critical need for greener manufacturing technologies. By leveraging cutting-edge plasma etching techniques and advanced materials science, HaloFreeEtch strives to reduce the environmental footprint of semiconductor production while maintaining high performance and cost-effectiveness.
HaloFreeEtch combines lab-scale research on three innovative technological routes with computational screening of novel and promising etchants, a comprehensive multi-scale modeling approach to predict potential working points and a model-based life cycle and sustainability analysis. State-of-the-art plasma etching machines will be modified and combined with innovative features and advanced analytics. Besides getting rid of halogens, we will address more dimensions of sustainability such as the high energy consumption of the established plasma etching processes. HaloFreeEtch will implement a novel, sustainability-driven process development scheme which might serve as a blueprint for sustainability-driven process development in electronics and many other industries. The project’s interdisciplinary consortium ensures a holistic approach, fostering collaboration and knowledge exchange across different fields.
The project will focus on the semiconductor industry, where plasma etching is a standard industrial process used for many applications. Taking the lead in the development of innovative halogen-free processes will strengthen the long-term position of the EU in the global chips industry.
The HaloFreeEtch interdisciplinary consortium consists of 7 partners. Chemnitz University of Technology (TUC), Fraunhofer ENAS (ENAS), Free University of Brussels (VUB) and the company Lionix contribute expertise in plasma etching technology. TUC and the company PlasmaSolve (PS) are experts in process modeling on different scales. Experts in economics from University of Graz (UG) add expertise in life cycle and sustainability analysis. The team from Tinexta Group is expert in dissemination, communication, IP-management and supports the management of the project which is coordinated by TUC.
Funded by the European Union, this innovative initiative brings together leading experts from academia, research institutions, and industry to address the critical need for greener manufacturing technologies. By leveraging cutting-edge plasma etching techniques and advanced materials science, HaloFreeEtch strives to reduce the environmental footprint of semiconductor production while maintaining high performance and cost-effectiveness.
HaloFreeEtch combines lab-scale research on three innovative technological routes with computational screening of novel and promising etchants, a comprehensive multi-scale modeling approach to predict potential working points and a model-based life cycle and sustainability analysis. State-of-the-art plasma etching machines will be modified and combined with innovative features and advanced analytics. Besides getting rid of halogens, we will address more dimensions of sustainability such as the high energy consumption of the established plasma etching processes. HaloFreeEtch will implement a novel, sustainability-driven process development scheme which might serve as a blueprint for sustainability-driven process development in electronics and many other industries. The project’s interdisciplinary consortium ensures a holistic approach, fostering collaboration and knowledge exchange across different fields.
The project will focus on the semiconductor industry, where plasma etching is a standard industrial process used for many applications. Taking the lead in the development of innovative halogen-free processes will strengthen the long-term position of the EU in the global chips industry.
The HaloFreeEtch interdisciplinary consortium consists of 7 partners. Chemnitz University of Technology (TUC), Fraunhofer ENAS (ENAS), Free University of Brussels (VUB) and the company Lionix contribute expertise in plasma etching technology. TUC and the company PlasmaSolve (PS) are experts in process modeling on different scales. Experts in economics from University of Graz (UG) add expertise in life cycle and sustainability analysis. The team from Tinexta Group is expert in dissemination, communication, IP-management and supports the management of the project which is coordinated by TUC.
During the project's first year, the consortium successfully established its collaborative framework, and a strong, visible spirit of cooperation has emerged among the partners. For example, the teams from TUC and from PlasmaSolve are working on a common modeling concept for plasma etching to generate data for a model-based life cycle and sustainability analysis to be performed by the UG team. We also achieved a lively exchange between the modeling teams and the technology experts from TUC, ENAS, VUB, and the company Lionix.
In the modeling work package, a database of halogen-free etchants was built, and their stability and reactivity were screened using quantum chemical calculations based on density functional theory. Using this approach, we identified a preliminary set of promising candidates for lab-scale evaluation.
Further modeling activities focused on the computational investigation of the sulfur hexafluoride etching processes as well as of a promising new etching chemistry. By process modeling, we investigate their implementation in specific etching equipment. By interfacing these models with the results of computational screening, we will be able to reduce the experimental workload throughout the project significantly. The plasma model for a novel etch chemistry exhibits a significantly lower yield compared to sulfur hexafluoride etching and identifies directions for future improvements of halogen-free etching.
In the first-year lab-scale work, the focus was on exploring the feasibility of etching of silicon using catalysts. Preliminary work was foundational for all future tasks, as more than one task relied on catalysts. The experimental approach involves applying nanoparticles and nanostructures as catalysts on silicon surfaces, which facilitate the dissociative adsorption of potential etchants that spread across the catalyst surface. Additionally, the possibility of metal-assisted plasma etching (MAPE) is being investigated in detail, based on literature suggesting suitable metals for silicon etching.
For a reference process based on halogens, a baseline life-cycle analysis (LCA) has been calculated. Using primary data from real etching equipment and from secondary literature an inventory as basis for the impact assessment was created. Challenges arose regarding data availability and benchmarking. To support the process, a quick-LCA tool was created to help build life cycle inventory directly from etching recipes and subsequently conduct impact assessments. Similar concepts will be used for a prospective LCA of halogen-free etching which is in preparation now.
Finally, the foundations of the project dissemination and communication strategy have been laid within the first year. This includes the launch of HaloFreeEtch website, the development of a visual identity and communication kit, the establishment of a social media presence, the release of a first newsletter, the organization of a first public webinar, along with the active participation in portfolio events. These activities enhanced HaloFreeEtch visibility, strengthened portfolio collaboration, and engaged stakeholders through news, posts, and events, ensuring effective outreach and impact. Further, an exploitation methodology aimed at shaping effective exploitation strategies aligned with the technical progress of HaloFreeEtch innovations has been developed.
In the modeling work package, a database of halogen-free etchants was built, and their stability and reactivity were screened using quantum chemical calculations based on density functional theory. Using this approach, we identified a preliminary set of promising candidates for lab-scale evaluation.
Further modeling activities focused on the computational investigation of the sulfur hexafluoride etching processes as well as of a promising new etching chemistry. By process modeling, we investigate their implementation in specific etching equipment. By interfacing these models with the results of computational screening, we will be able to reduce the experimental workload throughout the project significantly. The plasma model for a novel etch chemistry exhibits a significantly lower yield compared to sulfur hexafluoride etching and identifies directions for future improvements of halogen-free etching.
In the first-year lab-scale work, the focus was on exploring the feasibility of etching of silicon using catalysts. Preliminary work was foundational for all future tasks, as more than one task relied on catalysts. The experimental approach involves applying nanoparticles and nanostructures as catalysts on silicon surfaces, which facilitate the dissociative adsorption of potential etchants that spread across the catalyst surface. Additionally, the possibility of metal-assisted plasma etching (MAPE) is being investigated in detail, based on literature suggesting suitable metals for silicon etching.
For a reference process based on halogens, a baseline life-cycle analysis (LCA) has been calculated. Using primary data from real etching equipment and from secondary literature an inventory as basis for the impact assessment was created. Challenges arose regarding data availability and benchmarking. To support the process, a quick-LCA tool was created to help build life cycle inventory directly from etching recipes and subsequently conduct impact assessments. Similar concepts will be used for a prospective LCA of halogen-free etching which is in preparation now.
Finally, the foundations of the project dissemination and communication strategy have been laid within the first year. This includes the launch of HaloFreeEtch website, the development of a visual identity and communication kit, the establishment of a social media presence, the release of a first newsletter, the organization of a first public webinar, along with the active participation in portfolio events. These activities enhanced HaloFreeEtch visibility, strengthened portfolio collaboration, and engaged stakeholders through news, posts, and events, ensuring effective outreach and impact. Further, an exploitation methodology aimed at shaping effective exploitation strategies aligned with the technical progress of HaloFreeEtch innovations has been developed.
Progress beyond the state of the art has been achieved in the first year of the project by the development of a database of halogen-free etchants and the applied DFT-based computational screening to identify potential candidates. These results highlight the potential for safer and more sustainable alternatives to conventional halogen-based processes, with benefits for advanced semiconductor manufacturing. To ensure further uptake, key next steps include extended theoretical calculations, experimental validation, and pilot-scale demonstration of process feasibility.
In addition, the implementation of extensively validated reaction schemes for sulfur hexafluoride plasmas and another promising new chemistry at operating conditions relevant for the etching goes clearly beyond the state of the art. We have also set up a simulation framework that easily allows us to extend the model towards further new chemistries, provided that the kinetic data are available, or to new etching equipment geometries. In the next stages of the project, the model will be extended to new chemistries, emerging as a most promising halogen-free etching candidate.
In addition, the implementation of extensively validated reaction schemes for sulfur hexafluoride plasmas and another promising new chemistry at operating conditions relevant for the etching goes clearly beyond the state of the art. We have also set up a simulation framework that easily allows us to extend the model towards further new chemistries, provided that the kinetic data are available, or to new etching equipment geometries. In the next stages of the project, the model will be extended to new chemistries, emerging as a most promising halogen-free etching candidate.