Neglected Effects of Multicommutation in 2-Level SiC Inverters: Insights into Switching Behavior
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Autores:
Marius Wegner, Jan Fuhrmann, Till-Mathis Plötz, Hans-Günter Eckel
Publicado en:
PCIM Europe Conference 2026, 2026
Editor:
VDE Verlag GmbH
DOI:
10.5281/ZENODO.20609836
Electroluminescence investigation of high-power Mo/diamond pseudovertical Schottky diodes reaching 177 kW/cm2
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Autores:
Biasin, Giacomo; Fregolent, Manuel; Buffolo, Matteo; De Santi, Carlo; Bassaler, Julien; Maurya, Vishwajeet; Letellier, Juliette; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni; Chini, Alessandro; Meneghini, Matteo
Editor:
-
DOI:
10.5281/ZENODO.20702550
Influence of Positive and Negative Gate Stress Test Profiles on Gate Threshold Voltage Shift in SiC-MOSFETs
Autores:
Takahashi, M., Rementeria, A., Kristensen, O. D., Dalal, D. N., Wu, R., & Munk-Nielsen, S.
Publicado en:
International Conference on Integrated Power Systems (CIPS) 2026,, 2026
Editor:
-
Comparative Evaluation of Gate Driving Schemes for Paralleled 2.3 kV SiC MOSFET Power Modules
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Autores:
Nianzun Qi, Gao Liu, Hongbo Zhao, Asger Bjørn Jørgensen, and Stig Munk-Nielsen
Publicado en:
2026 International Power Electronics Conferen, 2026
Editor:
IEEE Explore
DOI:
10.5281/ZENODO.20589400
