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Electronic Doping of Soft Semiconductors

Project description

Protocols for stable electronic doping in semiconductors

Electronic doping is key for carrier density in semiconductors, especially in metal halide perovskites. Challenges like defect compensation and limited access to synchrotron facilities complicate synthesis and analysis. The ERC-funded EDO project aims to design new protocols for intentional and stable electronic doping in metal halide semiconductors. It will develop a multimodal experimental tool to quantitatively assess doping and its effects on the optoelectronic properties of metal halide perovskite semiconductors. By combining a photoemission microscope with tunable coherent sources spanning near-infrared (NIR) to soft X-ray radiation, the project will map the Fermi-level shift, electronic structure, and elemental composition of thin films at the nanometre scale while examining optoelectronic dynamics, thereby aiding materials-processing development.

Objective

EDO will develop protocols for intentional, spatially controlled, and stable electronic doping in metal halide semiconductors.
Electronic doping implies engineering of carrier density in semiconductors through the intentional introduction of a defect and it is necessary to achieve high performances in micro and optoelectronic technologies. Unlike established semiconductors, which are typically covalent solids, those belonging to the class of soft materials, such as molecules and polymers, forming van der Waals solids, and metal halide perovskites, forming ionic solids, host complex doping mechanisms. As a result, the design of free carrier density is far from being established and exploited in metal halides perovskites thin films. Intrinsic challenges, such as compensation and migration of defects, charge localization, phase segregation and the strong doping−processing relationship, may hide or hamper the designed doping process. Characterization and control of such phenomena require the combined knowledge of electronic, chemical and morphological/structural information, which is often missing. As a result, reports are often contradictory and advanced tools are in demand to draw a complete picture. Synchrotron facilities may help reaching the target, however, their limited access hampers direct feedback between synthesis and characterization.
EDO will develop an unprecedent multimodal experimental tool, in laboratory environment, to quantitatively assess the doping and examine its impact on the optoelectronic properties of metal halides perovskites semiconductors. A photoemission microscope will be coupled to tunable coherent sources, covering the entire spectrum from NIR to soft X-ray radiation to map at nanometer scale the Fermi level shift, the electronic structure and the elemental composition and organization of thin films, and the relative optoelectronic dynamics, transferring the secured knowledge to the development of materials processing.

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Topic(s)

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HORIZON-ERC - HORIZON ERC Grants

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Call for proposal

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(opens in new window) ERC-2024-ADG

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Host institution

FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 2 930 312,00
Address
VIA MOREGO 30
16163 Genova
Italy

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Region
Nord-Ovest Liguria Genova
Activity type
Research Organisations
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Total cost

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Beneficiaries (2)

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