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Bringing epigraphene nanoelectronics to life

Project description

Novel 2D material holds promise for high-speed, low-power transistors

Epigraphene is a 2D material that could be an alternative to silicon in electronic equipment. It leads to faster, smaller and more energy-efficient devices because it exhibits properties such as quantum coherence. Recently, researchers showed that epigraphene grown on silicon carbide is a record-breaking 2D semiconductor compatible with conventional production methods. With the support of the Marie Skłodowska-Curie Actions programme, the EpigraFET project aims to develop advanced transistors that could be faster using semiconducting epigraphene. The researchers will optimise the material and integrate nanoribbons designed to improve electron transport. Furthermore, they will explore the quantum properties semiconducting epigraphene can display when integrated into advanced devices. The proposed research could significantly boost electronics and be a step towards practical quantum computing.

Objective

Two decades ago, epigraphene (EG) nanoelectronics was proposed at Georgia Tech as a successor of silicon because this 2D material can exploit currently unutilized properties of charge carriers, like quantum coherence and the electronic spin, to realize faster, smaller and more energy efficient devices than is possible with silicon. In a recent breakthrough paper EG grown on a silicon carbide was shown to be a record breaking 2D semiconductor that is uniquely compatible with conventional nanoelectronics production methods. Working with the pioneers of EG, my research project proposes to demonstrate low power semiconducting epigraphene (SEG) tunnelling field effect transistors (TFET), with record breaking speeds. At GT I will grow chip-scale SEG, fabricate and optimise conventional SEG FETs, followed with development of prototype TFETs devices. SEG will be interconnected with epigraphene nanoribbons that have extraordinary ballistic transport properties of which the physics is still not well understood.
This knowledge will then be transferred to Grenoble where electronic spin and quantum coherence properties will be demonstrated in intercalated heterostructures that can be incorporated in advanced SEG devices. These properties, including edge state properties will be investigated using a variety of transport and local probe techniques to provide a solid foundation for SEG nanoelectronics.
This proposal has a critical scientific impact especially in elucidating the nature of the graphene edge state with quantum coherent properties easily assessable cryogenic temperatures (≈10K) and 10 micron device length scales that are relevant for practical quantum computing. The development of epigraphene nanoelectronics will revolutionize electronics, and as was successfully argued in the 1B€ European Graphene Flagship program, it will have a huge societal and economic impact for Europe. It will stimulate a worldwide SEG effort and put me at the forefront of this emerging field.

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Programme(s)

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Topic(s)

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Funding Scheme

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HORIZON-TMA-MSCA-PF-GF - HORIZON TMA MSCA Postdoctoral Fellowships - Global Fellowships

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Call for proposal

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(opens in new window) HORIZON-MSCA-2024-PF-01

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Coordinator

INSTITUT POLYTECHNIQUE DE GRENOBLE
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 413 379,72
Address
AVENUE FELIX VIALLET 46
38031 GRENOBLE CEDEX 1
France

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Activity type
Higher or Secondary Education Establishments
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Total cost

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