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Next-Generation Indium Gallium Nitride Micro LEDs

Project description

Big plans for smaller pixel sizes

LED technology has surpassed many traditional lighting methods and is now widely used in electronics for displays and other applications. However, further advancement in the field requires innovations that will enable the production of smaller and smaller LEDs. The EU-funded InGaNious project aims to research and develop a solution. It will focus on the development of innovative indium gallium nitride (InGaN) microLEDs. By using a unique production process, the project will develop pure InGaN microLEDs that are even smaller than current alternatives, with sub 2 μm pixel sizes. This breakthrough will enable the creation of highly efficient and high-quality displays that can be used in a wide range of applications.

Objective

Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets.

We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size <1 µm, internal quantum efficiency >3.5%, FWHM <50 nm, etc.) already outcompete current commercial options for sub-2 µm-pixel size.

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

HORIZON-EIC-ACC-BF - HORIZON EIC Accelerator Blended Finance

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Call for proposal

Procedure for inviting applicants to submit project proposals, with the aim of receiving EU funding.

(opens in new window) HORIZON-EIC-2022-ACCELERATOR-01

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Coordinator

HEXAGEM AB
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 2 230 783,63
Address
IDEON ALFA 3 SCHEELEVAGEN 15
223 63 LUND
Sweden

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Södra Sverige Sydsverige Skåne län
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Links
Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 3 186 833,75
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