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Content archived on 2024-05-14

Technology initiative in BiCMOS applications

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Exploitable results

Bipolar and bipolar complementary metal oxide semiconductor (biCMOS) technologies offer a number of advantages over other semiconductor fabrication processes, such as pure CMOS, for some important applications in the electronics equipment market. TIBIA (Technology Initiative in BiCMOS for Applications) developed a broad range of biCMOS technologies, including process assembly and support, together with the necessary design and computer aided design (CAD) expertise for exploitation. Supported by many European TIBIA established a world-class 0.5 micron bipolar technology now released. The technologies developed all have 2 to 5.5 V supply voltages, 0.5 micron minimum geometries, bipolar current gains from 85 to 130, 7 to 30 GHz cut-off frequencies and early voltages from 20 to 35 V. During the project, all partners shifted from G-line to I-line lithography and all used polysilicon emitters, combined with a rapid thermal anneal step to improve the transistor characteristics. Optimal processing conditions for the emitter-base module, which has very many variables, has also been achieved.

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