Technology initiative in BiCMOS applications

Informazioni relative al progetto

TIBIA II

ID dell’accordo di sovvenzione: 20485

Progetto chiuso

Data di avvio 1 Settembre 1995

Data di completamento 30 Novembre 1996

Finanziato da

• Specific research and technological development programme in the field of information technologies, 1994-1998

Costo totale

€ 13 937 500,00

Contributo UE

€ 7 000 000,00

Coordinato da

Philips Research
Netherlands

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati sfruttabili

TIBIA: next generation semiconductors

Bipolar and bipolar complementary metal oxide semiconductor (biCMOS) technologies offer a number of advantages over other semiconductor fabrication processes, such as pure CMOS, for some important applications in the electronics equipment market. TIBIA (Technology Initiative in BiCMOS for Applications) developed a broad range of biCMOS technologies, including process assembly and support, together with the necessary design and computer aided design (CAD) expertise for exploitation. Supported by many European TIBIA established a world-class 0.5 micron bipolar technology now released. The technologies developed all have 2 to 5.5 V supply voltages, 0.5 micron minimum geometries, bipolar current gains from 85 to 130, 7 to 30 GHz cut-off frequencies and early voltages from 20 to 35 V. During the project, all partners shifted from G-line to I-line lithography and all used polysilicon emitters, combined with a rapid thermal anneal step to improve the transistor characteristics. Optimal processing conditions for the emitter-base module, which has very many variables, has also been achieved.