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Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .
Résultats exploitables
Bipolar and bipolar complementary metal oxide semiconductor (biCMOS) technologies offer a number of advantages over other semiconductor fabrication processes, such as pure CMOS, for some important applications in the electronics equipment market. TIBIA (Technology Initiative in BiCMOS for Applications) developed a broad range of biCMOS technologies, including process assembly and support, together with the necessary design and computer aided design (CAD) expertise for exploitation. Supported by many European TIBIA established a world-class 0.5 micron bipolar technology now released.
The technologies developed all have 2 to 5.5 V supply voltages, 0.5 micron minimum geometries, bipolar current gains from 85 to 130, 7 to 30 GHz cut-off frequencies and early voltages from 20 to 35 V. During the project, all partners shifted from G-line to I-line lithography and all used polysilicon emitters, combined with a rapid thermal anneal step to improve the transistor characteristics. Optimal processing conditions for the emitter-base module, which has very many variables, has also been achieved.
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