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AlGaN and InAlN based microwave components

Objetivo

This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected.
AL-IN-WON will explore two main disrupting routes:
- Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability.
- High efficiency / High Power generation in Ku / Ka bands
It proposes to evaluate in 2 phases next generation of WBG material up to Ka Band.

The InAlN/GaN heterostructure offers the following advantages:
 As InAlN/GaN is lattice matched, it offer the possibility to growth very thin layer in the range of 10nm or below WHICH IS THE MOST RELEVANT to overcome short channel effect AND GO TOWARDS HIGH frequency range up to millimeter wave range.
 In0.18 Al0.82N /GaN is a new heterostructure able to give twice the drain current available from a more conventional AlGaN/GaN heterostructure. Breakdown voltage is comparable for the two heterostructures.
 In0.18 Al0.82N is latticed matched to GaN and higher reliability is therefore expected compared to AlGaN/GaN.
 Passivation is currently a major limitation to device operation. InAlN/GaN MOSHEMT are very promising with strong current drain improvement compared to HEMT (UltraGaN).
We plan to evaluate CW Ku and Ka Band MMIC High Power Amplifiers (HPA) and Low Noise Amplifiers (LNA). Demonstrators in Ka band will be designed based on devices coming from the run 2.

The final objective being the evaluation of InAlN/GaN compared to more conventional AlGaN/GaN very high power HEMT technology with very high breakdown voltage, high current and compliant with high power density. Regarding space application for which reliability and robustness are of major concerns, we expect to demonstrate the major breakthrough offered by GaN technology, and especially InAlN if successful.

Convocatoria de propuestas

FP7-SPACE-2009-1
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Coordinador

UNITED MONOLITHIC SEMICONDUCTORS SAS
Dirección
Av Du Quebec 10 Batiment Charmille Parc Silic De Villebon Courtaboeuf
91140 Villebon Sur Yvette
Francia
Tipo de actividad
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Aportación de la UE
€ 365 500
Contacto administrativo
Didier Baglieri (Mr.)

Participantes (6)

UNITED MONOLITHIC SEMICONDUCTORS GMBH
Alemania
Aportación de la UE
€ 272 940,80
Dirección
Wilhelm-runge-strasse 11
89081 Ulm
Tipo de actividad
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo
Klaus Beilenhoff (Dr.)
THALES ALENIA SPACE FRANCE SAS
Francia
Aportación de la UE
€ 175 798
Dirección
Avenue Jean Francois Champollion 26
31100 Toulouse
Tipo de actividad
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo
Julie Presa (Ms.)
UNIVERSITA DEGLI STUDI DI PADOVA
Italia
Aportación de la UE
€ 301 107,60
Dirección
Via 8 Febbraio 2
35122 Padova
Tipo de actividad
Higher or Secondary Education Establishments
Contacto administrativo
Maria Bernini (Ms.)
UNIVERSITE DE LIMOGES
Francia
Aportación de la UE
€ 187 229
Dirección
François Mitterrand 33
87032 Limoges
Tipo de actividad
Higher or Secondary Education Establishments
Contacto administrativo
Stephane Brunet (Mr.)
MEC - MICROWAVE ELECTRONICS FOR COMMUNICATIONS SRL
Italia
Aportación de la UE
€ 200 134
Dirección
Via San Nicolo' Di Villola 1
40127 Bologna
Tipo de actividad
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo
Vito Antonio Monaco (Prof.)
III-V LAB
Francia
Aportación de la UE
€ 450 762
Dirección
1 Avenue Augustin Fresnel Campus Polytechnique
91767 Palaiseau Cedex
Tipo de actividad
Other
Contacto administrativo
Denis Mazerolle (Dr.)