Project description Very advanced nanoelectronic components: design, engineering, technology and manufacturabilityDemonstration of the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequenciesGRADE is a project focusing on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. These are Graphene field effect transistors (GFET), that use graphene as a high-mobility transistor channel and the alternative "graphene base transistors" (GBT), that are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfil this requirement. This project enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing. The GRADE consortium consists of four academic partners, of which two have a strong experimental background and excellent processing facilities and one is focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design; one research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing; and one global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.\\n Show the project objective Hide the project objective GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative "graphene base transistors" (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfill this requirement. The proposed research enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing.To achieve these goals, GRADE unites a powerful consortium:Four academic partners, two of them with a strong experimental background and excellent processing facilities, one focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design.One research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing.One global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers. Fields of science engineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgrapheneengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP7-ICT - Specific Programme "Cooperation": Information and communication technologies Topic(s) ICT-2011.3.1 - Very advanced nanoelectronic components: design, engineering, technology and manufacturability Call for proposal FP7-ICT-2011-8 See other projects for this call Funding Scheme CP - Collaborative project (generic) Coordinator UNIVERSITAET SIEGEN Address Adolf reichwein strasse 2a 57076 Siegen Germany See on map Region Nordrhein-Westfalen Arnsberg Siegen-Wittgenstein Activity type Higher or Secondary Education Establishments Administrative Contact Sascha Fiedler (Mr.) Links Contact the organisation Opens in new window Website Opens in new window EU contribution € 378 220,00 Participants (13) Sort alphabetically Sort by EU Contribution Expand all Collapse all INFINEON TECHNOLOGIES AG Germany EU contribution € 581 272,00 Address Am campeon 1-15 85579 Neubiberg See on map Region Bayern Oberbayern München, Landkreis Activity type Private for-profit entities (excluding Higher or Secondary Education Establishments) Administrative Contact Susann Alexa (Mrs.) Links Contact the organisation Opens in new window Website Opens in new window IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS Germany EU contribution € 717 292,00 Address Im technologiepark 25 15236 Frankfurt oder See on map Region Brandenburg Brandenburg Oder-Spree Activity type Other Administrative Contact Uwe George (Mr.) Links Contact the organisation Opens in new window UNIVERSITE BORDEAUX I Participation ended France EU contribution € 255 454,00 Address 351 cours de la liberation 33405 Talence See on map Activity type Higher or Secondary Education Establishments Administrative Contact Stéphanie Clement (Ms.) Links Contact the organisation Opens in new window Website Opens in new window UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I France EU contribution € 408 002,00 Address Cite scientifique 59655 Villeneuve d'ascq See on map Activity type Higher or Secondary Education Establishments Administrative Contact Muriel VERNAY (Mrs.) Links Contact the organisation Opens in new window Website Opens in new window UNIVERSITE DE BORDEAUX France EU contribution € 0,00 Address Place pey berland 35 33000 Bordeaux See on map Region Nouvelle-Aquitaine Aquitaine Gironde Activity type Higher or Secondary Education Establishments Administrative Contact Georges Hadziioannou (Prof.) Links Contact the organisation Opens in new window Website Opens in new window CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA Italy EU contribution € 6 000,00 Address Via toffano 2 40125 Bologna See on map Region Nord-Est Emilia-Romagna Bologna Activity type Research Organisations Administrative Contact Baccarani Giorgio (Prof.) Links Contact the organisation Opens in new window KUNGLIGA TEKNISKA HOEGSKOLAN Sweden EU contribution € 392 000,00 Address Brinellvagen 8 100 44 Stockholm See on map Region Östra Sverige Stockholm Stockholms län Activity type Higher or Secondary Education Establishments Administrative Contact Simon Demir (Mr.) Links Contact the organisation Opens in new window Website Opens in new window CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE France EU contribution € 202 184,00 Address Rue michel -ange 3 75794 Paris See on map Activity type Research Organisations Administrative Contact Gilles Pulvermuller (Mr.) Links Contact the organisation Opens in new window INSTITUT POLYTECHNIQUE DE BORDEAUX France EU contribution € 0,00 Address Av du docteur albert schweitzer 1 33402 Talence See on map Region Nouvelle-Aquitaine Aquitaine Gironde Activity type Higher or Secondary Education Establishments Administrative Contact Stephanie Clement (Mrs.) Links Contact the organisation Opens in new window CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS France EU contribution € 112 968,00 Address Rue michel ange 3 75794 Paris See on map Region Ile-de-France Ile-de-France Paris Activity type Research Organisations Administrative Contact Stéphanie Clement (Mrs.) Links Contact the organisation Opens in new window Website Opens in new window UNIVERSITA DEGLI STUDI DI UDINE Italy EU contribution € 199 200,00 Address Via palladio 8 33100 Udine See on map Region Nord-Est Friuli-Venezia Giulia Udine Activity type Higher or Secondary Education Establishments Administrative Contact Roberto RINALDO (Prof.) Links Contact the organisation Opens in new window Website Opens in new window ALMA MATER STUDIORUM - UNIVERSITA DI BOLOGNA Italy EU contribution € 199 200,00 Address Via zamboni 33 40126 Bologna See on map Region Nord-Est Emilia-Romagna Bologna Activity type Higher or Secondary Education Establishments Administrative Contact Claudio Fiegna (Prof.) Links Contact the organisation Opens in new window Website Opens in new window UNIVERSITA DI PISA Italy EU contribution € 199 200,00 Address Lungarno pacinotti 43/44 56126 Pisa See on map Region Centro (IT) Toscana Pisa Activity type Higher or Secondary Education Establishments Administrative Contact Giovanna Carcea (Dr.) Links Contact the organisation Opens in new window Website Opens in new window