Selective Deposition of Silicides and Epitaxial Silicon

Objective

The development of denser circuit integration requires new metallisation schemes so that low bulk and contact resistances are guaranteed. The new contact materials to be developed should show good temperature stability, electromigration resistance, selectivity versus SiO2, and should avoid silicon consumption of the shallow contact to the source/drain region. An adequate in situ wafer-cleaning facility should provide a good interface between layers. In the SEDESES project it was proposed to develop a process and related equipment for the selective deposition of refractory silicides and epitaxial silicon.

By common agreement between the consortium and the Commission, the project was discontinued in June 1991, six months after its launch.

Programme(s)

• FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992

Leaflet | Map data © OpenStreetMap contributors, Credit: EC-GISCO, © EuroGeographics for the administrative boundaries

Coordinator

ADVANCED SEMICONDUCTOR MATERIALS INTERNATIONAL

Address

Rembrandtlaan, 2A
3723 BJ Bilthoven
Netherlands

Participants (5)

ALCATEL CIT SA

France

Address

55 Rue Edgar Quinet
92240 Malakoff

Centre National d'Études des Télécommunications (CNET)

France

Address

98 Chemin Du Vieux Chêne
38243 Meyland

Interuniversitair Mikroelektronica Centrum

Belgium

Address

Kapeldreef 75
3030 Heverlee

NATIONAL MICROELECTRONICS RESEARCH CENTRE

Ireland

Address

Prospect Row
Cork

Siemens AG

Germany

Address

Otto-hahn-ring 6
81739 München