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Selective Deposition of Silicides and Epitaxial Silicon

Objective

The development of denser circuit integration requires new metallisation schemes so that low bulk and contact resistances are guaranteed. The new contact materials to be developed should show good temperature stability, electromigration resistance, selectivity versus SiO2, and should avoid silicon consumption of the shallow contact to the source/drain region. An adequate in situ wafer-cleaning facility should provide a good interface between layers. In the SEDESES project it was proposed to develop a process and related equipment for the selective deposition of refractory silicides and epitaxial silicon.

By common agreement between the consortium and the Commission, the project was discontinued in June 1991, six months after its launch.

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Coordinator

ADVANCED SEMICONDUCTOR MATERIALS INTERNATIONAL
Address
Rembrandtlaan, 2A
3723 BJ Bilthoven
Netherlands

Participants (5)

ALCATEL CIT SA
France
Address
55 Rue Edgar Quinet
92240 Malakoff
Centre National d'Études des Télécommunications (CNET)
France
Address
98 Chemin Du Vieux Chêne
38243 Meyland
Interuniversitair Mikroelektronica Centrum
Belgium
Address
Kapeldreef 75
3030 Heverlee
NATIONAL MICROELECTRONICS RESEARCH CENTRE
Ireland
Address
Prospect Row
Cork
Siemens AG
Germany
Address
Otto-hahn-ring 6
81739 München