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Content archived on 2024-04-16

Selective Deposition of Silicides and Epitaxial Silicon

Objective

The development of denser circuit integration requires new metallisation schemes so that low bulk and contact resistances are guaranteed. The new contact materials to be developed should show good temperature stability, electromigration resistance, selectivity versus SiO2, and should avoid silicon consumption of the shallow contact to the source/drain region. An adequate in situ wafer-cleaning facility should provide a good interface between layers. In the SEDESES project it was proposed to develop a process and related equipment for the selective deposition of refractory silicides and epitaxial silicon.

By common agreement between the consortium and the Commission, the project was discontinued in June 1991, six months after its launch.

Topic(s)

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Call for proposal

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Funding Scheme

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Coordinator

ADVANCED SEMICONDUCTOR MATERIALS INTERNATIONAL
EU contribution
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Address
REMBRANDTLAAN, 2A
3723 BJ BILTHOVEN
Netherlands

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Participants (5)