Objectif
The development of denser circuit integration requires new metallisation schemes so that low bulk and contact resistances are guaranteed. The new contact materials to be developed should show good temperature stability, electromigration resistance, selectivity versus SiO2, and should avoid silicon consumption of the shallow contact to the source/drain region. An adequate in situ wafer-cleaning facility should provide a good interface between layers. In the SEDESES project it was proposed to develop a process and related equipment for the selective deposition of refractory silicides and epitaxial silicon.
By common agreement between the consortium and the Commission, the project was discontinued in June 1991, six months after its launch.
Champ scientifique
CORDIS classe les projets avec EuroSciVoc, une taxonomie multilingue des domaines scientifiques, grâce à un processus semi-automatique basé sur des techniques TLN.
CORDIS classe les projets avec EuroSciVoc, une taxonomie multilingue des domaines scientifiques, grâce à un processus semi-automatique basé sur des techniques TLN.
Thème(s)
Data not availableAppel à propositions
Data not availableRégime de financement
Data not availableCoordinateur
3723 BJ BILTHOVEN
Pays-Bas