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Dynamics of Amorphous Semiconductors: Intrinsic Nature and Application in Neuromorphic Hardware

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Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

Author(s): Matthias Kaes, Martin Salinga
Published in: Scientific Reports, Issue 6/1, 2016, Page(s) 1-12, ISSN 2045-2322
DOI: 10.1038/srep31699

Collective Structural Relaxation in Phase-Change Memory Devices

Author(s): Manuel Le Gallo, Daniel Krebs, Federico Zipoli, Martin Salinga, Abu Sebastian
Published in: Advanced Electronic Materials, Issue 4/9, 2018, Page(s) 1700627, ISSN 2199-160X
DOI: 10.1002/aelm.201700627

Monatomic phase change memory

Author(s): Martin Salinga, Benedikt Kersting, Ider Ronneberger, Vara Prasad Jonnalagadda, Xuan Thang Vu, Manuel Le Gallo, Iason Giannopoulos, Oana Cojocaru-Mirédin, Riccardo Mazzarello, Abu Sebastian
Published in: Nature Materials, Issue 17/8, 2018, Page(s) 681-685, ISSN 1476-1122
DOI: 10.1038/s41563-018-0110-9

Exploiting nanoscale effects in phase change memories

Author(s): Benedikt Kersting, Martin Salinga
Published in: Faraday Discussions, Issue 213, 2019, Page(s) 357-370, ISSN 1359-6640
DOI: 10.1039/C8FD00119G

Localised states and their capture characteristics in amorphous phase-change materials

Author(s): Martin Rütten, Andreas Geilen, Abu Sebastian, Daniel Krebs, Martin Salinga
Published in: Scientific Reports, Issue 9/1, 2019, ISSN 2045-2322
DOI: 10.1038/s41598-019-43035-7

Phase-change memories (PCM) – Experiments and modelling: general discussion

Author(s): Philip Bartlett, Alexandra I. Berg, Marco Bernasconi, Simon Brown, Geoffrey Burr, Cina Foroutan-Nejad, Ella Gale, Ruomeng Huang, Daniele Ielmini, Gabriela Kissling, Vladimir Kolosov, Michael Kozicki, Hisao Nakamura, Konstantin Rushchanskii, Martin Salinga, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, R. Stanley Williams
Published in: Faraday Discussions, Issue 213, 2019, Page(s) 393-420, ISSN 1359-6640
DOI: 10.1039/c8fd90064g