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Dynamics of Amorphous Semiconductors: Intrinsic Nature and Application in Neuromorphic Hardware

Publications

Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Author(s): Benedikt Kersting, Syed Ghazi Sarwat, Manuel Le Gallo, Kevin Brew, Sebastian Walfort, Nicole Saulnier, Martin Salinga, Abu Sebastian
Published in: Advanced Functional Materials, Issue 31/37, 2021, Page(s) 2104422, ISSN 1616-301X
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202104422

Roadmap on emerging hardware and technology for machine learning

Author(s): Karl Berggren, Qiangfei Xia, Konstantin K Likharev, Dmitri B Strukov, Hao Jiang, Thomas Mikolajick, Damien Querlioz, Martin Salinga, John R Erickson, Shuang Pi, Feng Xiong, Peng Lin, Can Li, Yu Chen, Shisheng Xiong, Brian D Hoskins, Matthew W Daniels, Advait Madhavan, James A Liddle, Jabez J McClelland, Yuchao Yang, Jennifer Rupp, Stephen S Nonnenmann, Kwang-Ting Cheng, Nanbo Gong, Miguel Angel La
Published in: Nanotechnology, Issue 32/1, 2021, Page(s) 012002, ISSN 0957-4484
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aba70f

Determining the Electrical Charging Speed Limit of ReRAM Devices

Author(s): M. von Witzleben, S. Walfort, R. Waser, S. Menzel, U. Bottger
Published in: IEEE Journal of the Electron Devices Society, Issue 9, 2021, Page(s) 667-678, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3095389

Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

Author(s): Matthias Kaes, Martin Salinga
Published in: Scientific Reports, Issue 6/1, 2016, Page(s) 1-12, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/srep31699

Collective Structural Relaxation in Phase-Change Memory Devices

Author(s): Manuel Le Gallo, Daniel Krebs, Federico Zipoli, Martin Salinga, Abu Sebastian
Published in: Advanced Electronic Materials, Issue 4/9, 2018, Page(s) 1700627, ISSN 2199-160X
Publisher: WILEY‐VCH Verlag GmbH & Co. KGaA
DOI: 10.1002/aelm.201700627

Monatomic phase change memory

Author(s): Martin Salinga, Benedikt Kersting, Ider Ronneberger, Vara Prasad Jonnalagadda, Xuan Thang Vu, Manuel Le Gallo, Iason Giannopoulos, Oana Cojocaru-Mirédin, Riccardo Mazzarello, Abu Sebastian
Published in: Nature Materials, Issue 17/8, 2018, Page(s) 681-685, ISSN 1476-1122
Publisher: Nature Publishing Group
DOI: 10.1038/s41563-018-0110-9

Exploiting nanoscale effects in phase change memories

Author(s): Benedikt Kersting, Martin Salinga
Published in: Faraday Discussions, Issue 213, 2019, Page(s) 357-370, ISSN 1359-6640
Publisher: Royal Society of Chemistry
DOI: 10.1039/C8FD00119G

Localised states and their capture characteristics in amorphous phase-change materials

Author(s): Martin Rütten, Andreas Geilen, Abu Sebastian, Daniel Krebs, Martin Salinga
Published in: Scientific Reports, Issue 9/1, 2019, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-019-43035-7

State dependence and temporal evolution of resistance in projected phase change memory

Author(s): Benedikt Kersting, Vladimir Ovuka, Vara Prasad Jonnalagadda, Marilyne Sousa, Valeria Bragaglia, Syed Ghazi Sarwat, Manuel Le Gallo, Martin Salinga, Abu Sebastian
Published in: Scientific Reports, Issue 10/1, 2020, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-020-64826-3

Phase-change memories (PCM) – Experiments and modelling: general discussion

Author(s): Philip Bartlett, Alexandra I. Berg, Marco Bernasconi, Simon Brown, Geoffrey Burr, Cina Foroutan-Nejad, Ella Gale, Ruomeng Huang, Daniele Ielmini, Gabriela Kissling, Vladimir Kolosov, Michael Kozicki, Hisao Nakamura, Konstantin Rushchanskii, Martin Salinga, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, R. Stanley Williams
Published in: Faraday Discussions, Issue 213, 2019, Page(s) 393-420, ISSN 1359-6640
Publisher: Royal Society of Chemistry
DOI: 10.1039/c8fd90064g

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