Dynamics of Amorphous Semiconductors: Intrinsic Nature and Application in Neuromorphic Hardware

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Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Autores: Benedikt Kersting, Syed Ghazi Sarwat, Manuel Le Gallo, Kevin Brew, Sebastian Walfort, Nicole Saulnier, Martin Salinga, Abu Sebastian
Publicado en: Advanced Functional Materials, Edición 31/37, 2021, Página(s) 2104422, ISSN 1616-301X
Editor: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202104422

Roadmap on emerging hardware and technology for machine learning

Autores: Karl Berggren, Qiangfei Xia, Konstantin K Likharev, Dmitri B Strukov, Hao Jiang, Thomas Mikolajick, Damien Querlioz, Martin Salinga, John R Erickson, Shuang Pi, Feng Xiong, Peng Lin, Can Li, Yu Chen, Shisheng Xiong, Brian D Hoskins, Matthew W Daniels, Advait Madhavan, James A Liddle, Jabez J McClelland, Yuchao Yang, Jennifer Rupp, Stephen S Nonnenmann, Kwang-Ting Cheng, Nanbo Gong, Miguel Angel La
Publicado en: Nanotechnology, Edición 32/1, 2021, Página(s) 012002, ISSN 0957-4484
Editor: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aba70f

Determining the Electrical Charging Speed Limit of ReRAM Devices

Autores: M. von Witzleben, S. Walfort, R. Waser, S. Menzel, U. Bottger
Publicado en: IEEE Journal of the Electron Devices Society, Edición 9, 2021, Página(s) 667-678, ISSN 2168-6734
Editor: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3095389

Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

Autores: Matthias Kaes, Martin Salinga
Publicado en: Scientific Reports, Edición 6/1, 2016, Página(s) 1-12, ISSN 2045-2322
Editor: Nature Publishing Group
DOI: 10.1038/srep31699

Collective Structural Relaxation in Phase-Change Memory Devices

Autores: Manuel Le Gallo, Daniel Krebs, Federico Zipoli, Martin Salinga, Abu Sebastian
Publicado en: Advanced Electronic Materials, Edición 4/9, 2018, Página(s) 1700627, ISSN 2199-160X
Editor: WILEY‐VCH Verlag GmbH & Co. KGaA
DOI: 10.1002/aelm.201700627

Monatomic phase change memory

Autores: Martin Salinga, Benedikt Kersting, Ider Ronneberger, Vara Prasad Jonnalagadda, Xuan Thang Vu, Manuel Le Gallo, Iason Giannopoulos, Oana Cojocaru-Mirédin, Riccardo Mazzarello, Abu Sebastian
Publicado en: Nature Materials, Edición 17/8, 2018, Página(s) 681-685, ISSN 1476-1122
Editor: Nature Publishing Group
DOI: 10.1038/s41563-018-0110-9

Exploiting nanoscale effects in phase change memories

Autores: Benedikt Kersting, Martin Salinga
Publicado en: Faraday Discussions, Edición 213, 2019, Página(s) 357-370, ISSN 1359-6640
Editor: Royal Society of Chemistry
DOI: 10.1039/C8FD00119G

Localised states and their capture characteristics in amorphous phase-change materials

Autores: Martin Rütten, Andreas Geilen, Abu Sebastian, Daniel Krebs, Martin Salinga
Publicado en: Scientific Reports, Edición 9/1, 2019, ISSN 2045-2322
Editor: Nature Publishing Group
DOI: 10.1038/s41598-019-43035-7

State dependence and temporal evolution of resistance in projected phase change memory

Autores: Benedikt Kersting, Vladimir Ovuka, Vara Prasad Jonnalagadda, Marilyne Sousa, Valeria Bragaglia, Syed Ghazi Sarwat, Manuel Le Gallo, Martin Salinga, Abu Sebastian
Publicado en: Scientific Reports, Edición 10/1, 2020, ISSN 2045-2322
Editor: Nature Publishing Group
DOI: 10.1038/s41598-020-64826-3

Phase-change memories (PCM) – Experiments and modelling: general discussion

Autores: Philip Bartlett, Alexandra I. Berg, Marco Bernasconi, Simon Brown, Geoffrey Burr, Cina Foroutan-Nejad, Ella Gale, Ruomeng Huang, Daniele Ielmini, Gabriela Kissling, Vladimir Kolosov, Michael Kozicki, Hisao Nakamura, Konstantin Rushchanskii, Martin Salinga, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, R. Stanley Williams
Publicado en: Faraday Discussions, Edición 213, 2019, Página(s) 393-420, ISSN 1359-6640
Editor: Royal Society of Chemistry
DOI: 10.1039/c8fd90064g

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