Dynamics of Amorphous Semiconductors: Intrinsic Nature and Application in Neuromorphic Hardware

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Measurement of Onset of Structural Relaxation in Melt‐Quenched Phase Change Materials

Autori: Benedikt Kersting, Syed Ghazi Sarwat, Manuel Le Gallo, Kevin Brew, Sebastian Walfort, Nicole Saulnier, Martin Salinga, Abu Sebastian
Pubblicato in: Advanced Functional Materials, Numero 31/37, 2021, Pagina/e 2104422, ISSN 1616-301X
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202104422

Roadmap on emerging hardware and technology for machine learning

Autori: Karl Berggren, Qiangfei Xia, Konstantin K Likharev, Dmitri B Strukov, Hao Jiang, Thomas Mikolajick, Damien Querlioz, Martin Salinga, John R Erickson, Shuang Pi, Feng Xiong, Peng Lin, Can Li, Yu Chen, Shisheng Xiong, Brian D Hoskins, Matthew W Daniels, Advait Madhavan, James A Liddle, Jabez J McClelland, Yuchao Yang, Jennifer Rupp, Stephen S Nonnenmann, Kwang-Ting Cheng, Nanbo Gong, Miguel Angel La
Pubblicato in: Nanotechnology, Numero 32/1, 2021, Pagina/e 012002, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aba70f

Determining the Electrical Charging Speed Limit of ReRAM Devices

Autori: M. von Witzleben, S. Walfort, R. Waser, S. Menzel, U. Bottger
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 9, 2021, Pagina/e 667-678, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3095389

Impact of defect occupation on conduction in amorphous Ge2Sb2Te5

Autori: Matthias Kaes, Martin Salinga
Pubblicato in: Scientific Reports, Numero 6/1, 2016, Pagina/e 1-12, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/srep31699

Collective Structural Relaxation in Phase-Change Memory Devices

Autori: Manuel Le Gallo, Daniel Krebs, Federico Zipoli, Martin Salinga, Abu Sebastian
Pubblicato in: Advanced Electronic Materials, Numero 4/9, 2018, Pagina/e 1700627, ISSN 2199-160X
Editore: WILEY‐VCH Verlag GmbH & Co. KGaA
DOI: 10.1002/aelm.201700627

Monatomic phase change memory

Autori: Martin Salinga, Benedikt Kersting, Ider Ronneberger, Vara Prasad Jonnalagadda, Xuan Thang Vu, Manuel Le Gallo, Iason Giannopoulos, Oana Cojocaru-Mirédin, Riccardo Mazzarello, Abu Sebastian
Pubblicato in: Nature Materials, Numero 17/8, 2018, Pagina/e 681-685, ISSN 1476-1122
Editore: Nature Publishing Group
DOI: 10.1038/s41563-018-0110-9

Exploiting nanoscale effects in phase change memories

Autori: Benedikt Kersting, Martin Salinga
Pubblicato in: Faraday Discussions, Numero 213, 2019, Pagina/e 357-370, ISSN 1359-6640
Editore: Royal Society of Chemistry
DOI: 10.1039/C8FD00119G

Localised states and their capture characteristics in amorphous phase-change materials

Autori: Martin Rütten, Andreas Geilen, Abu Sebastian, Daniel Krebs, Martin Salinga
Pubblicato in: Scientific Reports, Numero 9/1, 2019, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-019-43035-7

State dependence and temporal evolution of resistance in projected phase change memory

Autori: Benedikt Kersting, Vladimir Ovuka, Vara Prasad Jonnalagadda, Marilyne Sousa, Valeria Bragaglia, Syed Ghazi Sarwat, Manuel Le Gallo, Martin Salinga, Abu Sebastian
Pubblicato in: Scientific Reports, Numero 10/1, 2020, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-020-64826-3

Phase-change memories (PCM) – Experiments and modelling: general discussion

Autori: Philip Bartlett, Alexandra I. Berg, Marco Bernasconi, Simon Brown, Geoffrey Burr, Cina Foroutan-Nejad, Ella Gale, Ruomeng Huang, Daniele Ielmini, Gabriela Kissling, Vladimir Kolosov, Michael Kozicki, Hisao Nakamura, Konstantin Rushchanskii, Martin Salinga, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, R. Stanley Williams
Pubblicato in: Faraday Discussions, Numero 213, 2019, Pagina/e 393-420, ISSN 1359-6640
Editore: Royal Society of Chemistry
DOI: 10.1039/c8fd90064g

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