Study on ordering in SPSLs and factors affecting In fluctuations and interface roughness in SPSLs
Draft 1st Periodic report. The basis for the Midterm Review.
Study of effect of reconstructions induced by active species/ substrate/ surface orientation on In incorporation in SPSLs
Study on the recombination mechanism in In-rich (InN/GaN) structures
Study on defect formation in (In,Ga)N buffers on GaN and alternative substrates
Study of influence of Mg on In wetting and on InN reconstructions deposited on Ga- and N-polar GaN substrates, and on the incorporation of In in (InN/GaN) SPSLs.
Study on the critical thickness for dislocation formation in (In,Ga)N buffers on different substrates
Study of influence of active species on In wetting and on InN reconstructions deposited on Ga- and Npolar GaN substrates
Study of In wetting and InN reconstruction domains on ZnO and on (In,Ga)N buffers deposited on Gaand N-polar GaN substrates
Report on the most reliable method for analysis and quantification of In fluctuations
1st progress report
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Author(s): Torsten Ernst, Caroline Chèze, Raffaella Calarco
Published in: Journal of Applied Physics, Issue 124/11, 2018, Page(s) 115305, ISSN 0021-8979
Author(s): J. Moneta, M. Siekacz, E. Grzanka, T. Schulz, T. Markurt, M. Albrecht, J. Smalc-Koziorowska
Published in: Applied Physics Letters, Issue 113/3, 2018, Page(s) 031904, ISSN 0003-6951
Author(s): P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski
Published in: Journal of Applied Physics, Issue 124/6, 2018, Page(s) 065701, ISSN 0021-8979
Author(s): L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, J. Neugebauer
Published in: Physical Review Materials, Issue 2/1, 2018, ISSN 2475-9953
Author(s): C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
Published in: Applied Physics Letters, Issue 110, 2017, Page(s) 072104, ISSN 0003-6951