Short Period Superlattices for Rational (In,Ga)N

Project Information

SPRInG

Grant agreement ID: 642574

DOI 10.3030/642574

Project closed

EC signature date 25 November 2014

Start date 1 January 2015

End date 31 December 2018

Funded under

• EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions

Total cost € 1 221 003,36

EU contribution € 1 221 003,36

Coordinated by

FORSCHUNGSVERBUND BERLIN EV
Germany

Deliverables

Documents, reports (11)

Ordering in SPSLs and factors affecting In fluctuations and interface roughness in SPSLs

Study on ordering in SPSLs and factors affecting In fluctuations and interface roughness in SPSLs

Draft Periodic report

Draft 1st Periodic report. The basis for the Midterm Review.

Reconstruction effects on In incorporation in SPSLs

Study of effect of reconstructions induced by active species/ substrate/ surface orientation on In incorporation in SPSLs

Recombination mechanism in In-rich (InN/GaN) SPSLs

Study on the recombination mechanism in In-rich (InN/GaN) structures

Defect formation in (In,Ga)N buffers on GaN and alternative substrates

Study on defect formation in (In,Ga)N buffers on GaN and alternative substrates

Influence of Mg as active specie on the reconstructions of InN and on the incorporation of In in (InN/GaN) SPSLs

Study of influence of Mg on In wetting and on InN reconstructions deposited on Ga- and N-polar GaN substrates, and on the incorporation of In in (InN/GaN) SPSLs.

Critical thickness for dislocation formation in (In,Ga)N buffers on different substrates

Study on the critical thickness for dislocation formation in (In,Ga)N buffers on different substrates

Influence of active species on In wetting and InN reconstructions on Gaand N-polar GaN substrates

Study of influence of active species on In wetting and on InN reconstructions deposited on Ga- and Npolar GaN substrates

In wetting and InN reconstructions on ZnO and on relaxed (In,Ga)N buffers deposited on Ga- and N-polar GaN substrates with and without miscut

Study of In wetting and InN reconstruction domains on ZnO and on (In,Ga)N buffers deposited on Gaand N-polar GaN substrates

Reliable method for analysis and quantification of In fluctuations

Report on the most reliable method for analysis and quantification of In fluctuations

Progress Report

1st progress report

Other (7)

PhD thesis WP2.1

Results from WP2.1

PhD thesis WP1.1

Results from WP1.1

Supervisory Board

Supervisory Board of the Network

PhD thesis WP2.2

Results from WP2.2

PhD thesis WP3

Results from WP3

MTR

Midterm Review meeting

PhD thesis WP1.2

Results from WP1.2

Publications

Peer reviewed articles (5)

InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001)

Author(s): Torsten Ernst, Caroline Chèze, Raffaella Calarco
Published in: Journal of Applied Physics, Issue 124/11, 2018, Page(s) 115305, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5041880

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Author(s): J. Moneta, M. Siekacz, E. Grzanka, T. Schulz, T. Markurt, M. Albrecht, J. Smalc-Koziorowska
Published in: Applied Physics Letters, Issue 113/3, 2018, Page(s) 031904, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5030190

Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in In x Ga 1-x N/In 0.02 Ga 0.98 N superlattices

Author(s): P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski
Published in: Journal of Applied Physics, Issue 124/6, 2018, Page(s) 065701, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5032287

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

Author(s): L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, J. Neugebauer
Published in: Physical Review Materials, Issue 2/1, 2018, ISSN 2475-9953
Publisher: American Physical Society
DOI: 10.1103/PhysRevMaterials.2.011601

In/GaN(0001)-(√3×√3)R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

Author(s): C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
Published in: Applied Physics Letters, Issue 110, 2017, Page(s) 072104, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.4976198