Leistungen
Study on ordering in SPSLs and factors affecting In fluctuations and interface roughness in SPSLs
Draft Periodic reportDraft 1st Periodic report. The basis for the Midterm Review.
Reconstruction effects on In incorporation in SPSLsStudy of effect of reconstructions induced by active species/ substrate/ surface orientation on In incorporation in SPSLs
Recombination mechanism in In-rich (InN/GaN) SPSLsStudy on the recombination mechanism in In-rich (InN/GaN) structures
Defect formation in (In,Ga)N buffers on GaN and alternative substratesStudy on defect formation in (In,Ga)N buffers on GaN and alternative substrates
Influence of Mg as active specie on the reconstructions of InN and on the incorporation of In in (InN/GaN) SPSLsStudy of influence of Mg on In wetting and on InN reconstructions deposited on Ga- and N-polar GaN substrates, and on the incorporation of In in (InN/GaN) SPSLs.
Critical thickness for dislocation formation in (In,Ga)N buffers on different substratesStudy on the critical thickness for dislocation formation in (In,Ga)N buffers on different substrates
Influence of active species on In wetting and InN reconstructions on Gaand N-polar GaN substratesStudy of influence of active species on In wetting and on InN reconstructions deposited on Ga- and Npolar GaN substrates
In wetting and InN reconstructions on ZnO and on relaxed (In,Ga)N buffers deposited on Ga- and N-polar GaN substrates with and without miscutStudy of In wetting and InN reconstruction domains on ZnO and on (In,Ga)N buffers deposited on Gaand N-polar GaN substrates
Reliable method for analysis and quantification of In fluctuationsReport on the most reliable method for analysis and quantification of In fluctuations
Progress Report1st progress report
Results from WP2.1
PhD thesis WP1.1Results from WP1.1
Supervisory BoardSupervisory Board of the Network
PhD thesis WP2.2Results from WP2.2
PhD thesis WP3Results from WP3
MTRMidterm Review meeting
PhD thesis WP1.2Results from WP1.2
Veröffentlichungen
Autoren:
Torsten Ernst, Caroline Chèze, Raffaella Calarco
Veröffentlicht in:
Journal of Applied Physics, Ausgabe 124/11, 2018, Seite(n) 115305, ISSN 0021-8979
Herausgeber:
American Institute of Physics
DOI:
10.1063/1.5041880
Autoren:
J. Moneta, M. Siekacz, E. Grzanka, T. Schulz, T. Markurt, M. Albrecht, J. Smalc-Koziorowska
Veröffentlicht in:
Applied Physics Letters, Ausgabe 113/3, 2018, Seite(n) 031904, ISSN 0003-6951
Herausgeber:
American Institute of Physics
DOI:
10.1063/1.5030190
Autoren:
P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski
Veröffentlicht in:
Journal of Applied Physics, Ausgabe 124/6, 2018, Seite(n) 065701, ISSN 0021-8979
Herausgeber:
American Institute of Physics
DOI:
10.1063/1.5032287
Autoren:
L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, J. Neugebauer
Veröffentlicht in:
Physical Review Materials, Ausgabe 2/1, 2018, ISSN 2475-9953
Herausgeber:
American Physical Society
DOI:
10.1103/PhysRevMaterials.2.011601
Autoren:
C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
Veröffentlicht in:
Applied Physics Letters, Ausgabe 110, 2017, Seite(n) 072104, ISSN 0003-6951
Herausgeber:
American Institute of Physics
DOI:
10.1063/1.4976198
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