Access to European Nanoelectronics Network

Livrables

Joint Research Activites - Call 3 results

Outcome for first call for proposals for Joint Research Activities and formal notification to successful applicants

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

1st Best Practice Report - Leti

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

3rd Best Practice Report - IMEC

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

2nd Best Practice Report - Leti

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

2nd Best Practice Report - Tyndall

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

1st Best Practice Report - IMEC

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

3rd ASCENT access summary report

ASCENT access summary report to provide details from JRA calls and activities to the ASCENT Management Team, Users Group, Industry Innovation Committee and the EC.

1st ASCENT access summary report

ASCENT access summary report to provide details from JRA calls and activities to the ASCENT Management Team, Users Group, Industry Innovation Committee and the EC.

1st Best Practice Report - Tyndall

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

2nd Best Practice Report - IMEC

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

3rd Best Practice Report - Leti

Analysis report on best practices implemented so far based upon feedback from the Users accessing facilities and Users Group recommendations.

2nd ASCENT access summary report

ASCENT access summary report to provide details from JRA calls and activities to the ASCENT Management Team, Users Group, Industry Innovation Committee and the EC.

Access data site

Create Access data site and open to registered members. From this site, the wider community can access the electrical data and models generated through the ASCENT project.

4th ASCENT access summary report

ASCENT access summary report to provide details from JRA calls and activities to the ASCENT Management Team, Users Group, Industry Innovation Committee and the EC.

1st ASCENT project flyer

Printed and digital flyer with information on the ASCENT infrastructure and activities to promote awareness of the research infrastructure and create awareness of research opprtunities through electronic distribution and physical distribution at conferences, workshops, and trade shows.

2nd Users Community Workshop

The joint research activities will be defined in tandem with the ASCENT partners and the Users Group through workshops, and following each workshop there will be dedicated calls for collaborative proposals.The Users Group on behalf of the Users Community will help host workshops held in rotation at the partner sites.

Project website

initial web site for announcement of research infrastructure, technical offerings, to be updated with access models and calls for joint research activities. Web site is to act as front end to project databases, promotional material and training material to be hosted on through flexilearn.ie

On-line Users Forum

On-line Users Forum for exchange of information between users and between users and the research infrastructure providers.

Final Press Release

Final press release highlight project impacts and describing sustainable actions following the initial period of opertion of the research infrastructure.

2nd ASCENT project flyer

Printed and digital flyer with information on the ASCENT infrastructure and activities to promote awareness of the research infrastructure and create awareness of research opprtunities through electronic distribution and physical distribution at conferences, workshops, and trade shows.

2nd Workshop on Widening Participation

2nd Workshop on Widening Participation is additional to the workshops to define the call for proposals for joint research activities. This is the first of two workshops which will be held in new member states to create an awareness of the state-of-the-art research opportunities that can be assessed through ASCENT.

Joint Research Activities - Call 1 Results

Outcome for first call for proposals for Joint Research Activities and formal notification to successful applicants

1st Users Community Workshop

The joint research activities will be defined in tandem with the ASCENT partners and the Users Group through workshops, and following each workshop there will be dedicated calls for collaborative proposals.The Users Group on behalf of the Users Community will help host workshops held in rotation at the partner sites.

Press release - project announcement

Initial press release targeting research and industrial community to create awareness of the infrastructural offering uner ASCENT.

Joint Research Activites -Call 2 results

Outcome for first call for proposals for Joint Research Activities and formal notification to successful applicants

3rd Users Community Workshop

The joint research activities will be defined in tandem with the ASCENT partners and the Users Group through workshops, and following each workshop there will be dedicated calls for collaborative proposals.The Users Group on behalf of the Users Community will help host workshops held in rotation at the partner sites.

1st Workshop on Widening Participation

1st Workshop on Widening Participation is additional to the workshops to define the call for proposals for joint research activities. This is the first of two workshops which will be held in new member states to create an awareness of the state-of-the-art research opportunities that can be assessed through ASCENT.

On-line database

Integrate front end web site developed in DX.Y to back-end for database access for the user community.

Publications

Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress

Auteurs: A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda
Publié dans: 23rd International Workshop on Oxide Electronics, 12-14 October 2016, Nanjing, China, Numéro Annual, 2016
Éditeur: Workshop

Low-temperature RF plasma treatment of junctionless Pd-Al2O3-InGaAs MISFETs

Auteurs: Yu.V. Gomeniuk, Yu.Yu. Gomeniuk, P.N. Okholin, T.M. Nazarova, K. Cherkaoui, P.K. Hurley and A.N. Nazarov
Publié dans: Promising Trends of Modern Electronics, Informational and Computer systems (MEICS-2017), November 22-24, 2017, Dnipro (Ukraine), Numéro Annual, 2017, Page(s) 205-6
Éditeur: MEICS-2017

Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method

Auteurs: J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda
Publié dans: DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, 8-12 October 2017, Valladolid, Spain, Numéro Annual, 2017
Éditeur: DRIP XVII

Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations

Auteurs: M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, C. Kernstock, H. W. Karner, G. Rzepa, T. Grasset
Publié dans: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 30.7.1-30.7.4, ISBN 978-1-5090-3902-9
Éditeur: IEEE
DOI: 10.1109/iedm.2016.7838516

Statistical characterization and modeling of drain current local and global variability in 14 nm bulk FinFETs

Auteurs: T. Karatsori, C. Theodorou, R. Lavieville, T. Chiarella, J. Mitard, N. Horiguchi, C.A. Dimitriadis, G. Ghibaudo
Publié dans: 2017 International Conference of Microelectronic Test Structures (ICMTS), 2017, Page(s) 1-5, ISBN 978-1-5090-3615-8
Éditeur: IEEE
DOI: 10.1109/icmts.2017.7954263

Coupled bow-tie antenna — HfO<inf>2</inf> MIM diode for millimetre wave detection applications

Auteurs: M. Dragoman, M. Aldrigo, S. Iordanescu, M. Modreanu, N. Cordero
Publié dans: 2017 International Semiconductor Conference (CAS), Numéro Annual, 2017, Page(s) 119-122, ISBN 978-1-5090-3985-2
Éditeur: IEEE
DOI: 10.1109/SMICND.2017.8101174

Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm bulk FinFETs

Auteurs: T. Karatsori et al
Publié dans: 30th International Conference on Microelectronics Test Structures, 2017
Éditeur: IEEE Xplore

Vertically Stacked Nanowire MOSFETS for Sub-10 nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations

Auteurs: M. Karner et al
Publié dans: Technical Digest of the 2016 International Electron Devices Meeting, 2017
Éditeur: IEEE

Modelling 14 nm CMOS and Emerging Devices through ASCENT

Auteurs: T. Chiarella, N. Cordero, J. Donnelly, O. Faynot, J. Greer, D. Holden, G. Maxwell, J. Mitard, A. Mercha, G. Reimbold, P. Roseingrave, V. Terzieva
Publié dans: 2016 ESSDERC Proceedings, 2016
Éditeur: European Solid State Devices

Thermally Stable External Cavity Laser Based on Silicon Nitride Periodic Nanostructures

Auteurs: S. Iadanza, A. Bakoz, D. Panettieri, A. Tedesco, G. Giannino, M. Grande, L. OrFaolain
Publié dans: 2018 20th International Conference on Transparent Optical Networks (ICTON), 2018, Page(s) 1-4, ISBN 978-1-5386-6605-0
Éditeur: IEEE
DOI: 10.1109/icton.2018.8473622

RF Plasma Treatment of Junctionless Pd-Al2O3-InGaAs MISFETs

Auteurs: Yu.V. Gomeniuk, P.N. Okholin, T.E.Rudenko, Yu.Yu. Gomeniuk, T.M. Nazarova, V. Djara, K. Cherkaoui, P.K. Hurley, A.N. Nazarov
Publié dans: VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), Numéro October 2-4, 2018
Éditeur: USCPS-8

Temperature Performance of Meander-Type Inductor in Silicon Technology

Auteurs: Aleksandar Pajkanovic, Goran M. Stojanovic
Publié dans: 2018 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2018, Page(s) 193-196, ISBN 978-1-5386-5153-7
Éditeur: IEEE
DOI: 10.1109/smacd.2018.8434918

Silicon nitride 1D-photonic crystal cavity for optical sensing in the near-infrared spectrum in air and liquid

Auteurs: S. Iadanza, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain
Publié dans: Photonics Ireland 2018, Numéro Biennial, 2019
Éditeur: Photonics Ireland

Effect of Sub-10nm Fin-widths on the Analog Performance of FinFETs

Auteurs: Mandar S. Bhoir, Nihar R. Mohapatra, Thomas Chiarella, Lars Ake Ragnarsson, Jerome Mitard, Valentina Terzeiva, Naoto Horiguchi
Publié dans: 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 2019, Page(s) 7-9, ISBN 978-1-5386-6508-4
Éditeur: IEEE
DOI: 10.1109/edtm.2019.8731200

Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

Auteurs: Peter Schüffelgen, Daniel Rosenbach, Elmar Neumann, Martin P. Stehno, Martin Lanius, Jialin Zhao, Meng Wang, Brendan Sheehan, Michael Schmidt, Bo Gao, Alexander Brinkman, Gregor Mussler, Thomas Schäpers, Detlev Grützmacher
Publié dans: Journal of Crystal Growth, Numéro 477, 2017, Page(s) 183-187, ISSN 0022-0248
Éditeur: Elsevier BV
DOI: 10.1016/j.jcrysgro.2017.03.035

Spatial analysis of failure sites in large area MIM capacitors using wavelets

Auteurs: J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P.K. Hurley, E. Miranda
Publié dans: Microelectronic Engineering, Numéro 178, 2017, Page(s) 10-16, ISSN 0167-9317
Éditeur: Elsevier BV
DOI: 10.1016/j.mee.2017.04.011

Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al 2 O 3 -InGaAs MISFET Operation

Auteurs: Yuri V. Gomeniuk, Y Y. Gomeniuk, Pavel N Okholin, Tamara M. Nazarova, Vladimir Djara, Karim Cherkaoui, Paul K. Hurley, A. N. Nazarov
Publié dans: ECS Transactions, Numéro 85/8, 2018, Page(s) 137-142, ISSN 1938-5862
Éditeur: Electrochemical Society, Inc.
DOI: 10.1149/08508.0137ecst

Functionalization of SiO 2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination

Auteurs: Maart van Druenen, Gillian Collins, Colm Glynn, Colm O’Dwyer, Justin D. Holmes
Publié dans: ACS Applied Materials & Interfaces, Numéro 10/2, 2018, Page(s) 2191-2201, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.7b16950

"Harvesting Electromagnetic Energy in the <inline-formula> <tex-math notation=""LaTeX"">${V}$ </tex-math> </inline-formula>-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO 2 /Pt Metal–Insulator–Metal Diode"

Auteurs: Martino Aldrigo, Mircea Dragoman, Mircea Modreanu, Ian Povey, Sergiu Iordanescu, Dan Vasilache, Adrian Dinescu, Mazen Shanawani, Diego Masotti
Publié dans: IEEE Transactions on Electron Devices, Numéro 65/7, 2018, Page(s) 2973-2980, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2835138

Determination of border/bulk traps parameters based on ( C - G - V ) admittance measurements

Auteurs: Andrzej Mazurak, Jakub Jasin´ski, Bogdan Majkusiak
Publié dans: Journal of Vacuum Science & Technology B, Numéro 37/3, 2019, Page(s) 032904, ISSN 2166-2754
Éditeur: AVS Science and Technology Society
DOI: 10.1116/1.5060674

Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors

Auteurs: A. Mazurak, J. Jasiński, B. Majkusiak
Publié dans: Microelectronic Engineering, Numéro 215, 2019, Page(s) 111011, ISSN 0167-9317
Éditeur: Elsevier BV
DOI: 10.1016/j.mee.2019.111011

Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors

Auteurs: J. Munoz-Gorriz, D. Blachier, G. Reimbold, F. Campabadal, J. Sune, S. Monaghan, K. Cherkaoui, P. K. Hurley, E. Miranda
Publié dans: IEEE Transactions on Device and Materials Reliability, Numéro 19/2, 2019, Page(s) 452-460, ISSN 1530-4388
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tdmr.2019.2917138

Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm

Auteurs: John MacHale, Fintan Meaney, Noel Kennedy, Luke Eaton, Gioele Mirabelli, Mary White, Kevin Thomas, Emanuele Pelucchi, Dirch Hjorth Petersen, Rong Lin, Nikolay Petkov, James Connolly, Chris Hatem, Farzan Gity, Lida Ansari, Brenda Long, Ray Duffy
Publié dans: Journal of Applied Physics, Numéro 125/22, 2019, Page(s) 225709, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5098307

Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature

Auteurs: V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis, E. Aperathitis
Publié dans: Journal of Materiomics, 2019, ISSN 2352-8478
Éditeur: Chinese Ceramic Society
DOI: 10.1016/j.jmat.2019.02.006

Molecular monolayers for doping silicon : from doping dose control to device application

Auteurs: Liang Ye
Publié dans: 2016, ISBN 9789-03654149-7
Éditeur: University of Twente
DOI: 10.3990/1.9789036541497

Design and Characterisation of an Inductor and a Low-Noise Amplifier in Monolithic Integrated Circuit Technology for Wideband Operation

Auteurs: Aleksander Pajkanovic
Publié dans: 2018
Éditeur: Faculty of Technical Sciences, Univ. of Novi Sad

Electrical Characterization of Reliability in Advanced Silicon-on-Insulator Structures for sub-22nm Technologies

Auteurs: Carlos Márquez
Publié dans: 2017
Éditeur: Universidad de Granada

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