Single-Hole Pumping in Silicon

Publicaciones

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

Autores: R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak
Publicado en: Physical Review Applied, Edición 8/4, 2017, ISSN 2331-7019
Editor: APS
DOI: 10.1103/physrevapplied.8.044021

Valley splitting of single-electron Si MOS quantum dots

Autores: John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew D. Baczewski, Erik Nielsen, Leon Maurer, Inès Montaño, Martin Rudolph, M. S. Carroll, C. H. Yang, A. Rossi, A. S. Dzurak, Richard P. Muller
Publicado en: Applied Physics Letters, Edición 109/25, 2016, Página(s) 253101, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/1.4972514

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Autores: A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Publicado en: Applied Physics Letters, Edición 110/21, 2017, Página(s) 212101, ISSN 0003-6951
Editor: American Institute of Physics
DOI: 10.1063/1.4984224

Radio-frequency capacitive gate-based sensing

Autores: Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Publicado en: 2018
Editor: Submitted to Physical Review Applied

Gigahertz Single-Electron Pumping Mediated by Parasitic States

Autores: A. Rossi, J. Klochan, J. Timoshenko, F. E. Hudson, M. Mottonen, S. Rogge, A. S. Dzurak, V. Kashcheyevs, G. C. Tettamanzi
Publicado en: 2018
Editor: submitted to Nano Letters

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