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Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies

Objective

Overall objective: to enhance advanced CMOS RF and logic capability through the use of III-V heterostructure nanowires monolithically integrated on a silicon platform.

INSIGHT will focus on:
-Development and evaluation of the performance of silicon based, 94 GHz III-V nanowire MOSFET low-noise amplifiers. The technology opens a path for cost reduction of key mm-wave components for high bandwidth wireless applications.
-Development of III-V nanowire MOSFETs on Si with breakdown voltage of 6 V, and evaluation of their performance in millimeter wave (90 GHz) power amplifier circuits. These devices will increase output power available from Si CMOS compatible mm-wave technologies with benefits for transceiver range and sensitivity.
-Realisation of basic building blocks for future RF-circuits including mixers, Voltage-Controlled Oscillators, and frequency dividers for prescalers using silicon based III-V nanowire MOSFETS.
-Development of science and technology for all-III-V nanowire CMOS on silicon targeting future technology nodes for 10 nm and below. This will be validated by the implementation and dynamic characterisation of a flip-flop as demonstration of the co-integration of III-V n- and p-type nanowire MOSFETs.

INSIGHT is a strong consortium consisting of 7 partners with complimentary and well-documented experience in III-V MOS technology and millimeter-wave circuit design and implementation. Our main outcomes include : a)Technology toolbox including, materials, processes and integration for III-V n- and p-channel MOSFETs on a silicon platform, b) III-V nanowire MOSFET RF-transistor technology, c) Circuit design library, d) Circuit demonstrators with a clear technology path towards higher TRLs and commercialization.
Our vision is to use III-V nanowire CMOS technology for millimeter-wave applications in a System-on-Chip approach, combining RF- and logic on one Si chip. Additionally, applications for logic at the 10 nm node and beyond are foreseen.

Field of science

  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds

Call for proposal

H2020-ICT-2015
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

LUNDS UNIVERSITET
Address
Paradisgatan 5C
22100 Lund
Sweden
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 1 206 548,75

Participants (5)

UNIVERSITY OF GLASGOW
United Kingdom
EU contribution
€ 542 155
Address
University Avenue
G12 8QQ Glasgow
Activity type
Higher or Secondary Education Establishments
UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK
Ireland
EU contribution
€ 518 242,50
Address
Western Road
T12 YN60 Cork
Activity type
Higher or Secondary Education Establishments
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
Germany
EU contribution
€ 634 723,75
Address
Hansastrasse 27C
80686 Munchen
Activity type
Research Organisations
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France
EU contribution
€ 622 763,75
Address
Rue Leblanc 25
75015 Paris 15
Activity type
Research Organisations
IBM RESEARCH GMBH
Switzerland
EU contribution
€ 0
Address
Saeumerstrasse 4
8803 Rueschlikon
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)