Skip to main content

Milli-Volt Switch Technologies for Energy Efficient Computation and Sensing

Publications

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Author(s): Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu
Published in: Scientific Reports, Issue 7/1, 2017, ISSN 2045-2322
DOI: 10.1038/s41598-017-00359-6

Vanadium Oxide bandstop tunable filter for Ka frequency bands based on a novel reconfigurable spiral shape defected ground plane CPW

Author(s): E. A. Casu, A. A. Muller, M. Fernandez-Bolanos, A. Fumarola, A. Krammer, A. Schuler, A. M. Ionescu
Published in: IEEE Access, 2017, Page(s) 1-1, ISSN 2169-3536
DOI: 10.1109/ACCESS.2018.2795463

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Author(s): Nicoló Oliva, Emanuele Andrea Casu, Chen Yan, Anna Krammer, Teodor Rosca, Arnaud Magrez, Igor Stolichnov, Andreas Schueler, Olivier J. F. Martin, Adrian Mihai Ionescu
Published in: Scientific Reports, Issue 7/1, 2017, ISSN 2045-2322
DOI: 10.1038/s41598-017-12950-y

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Author(s): Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Gia V Luong, Qing-Tai Zhao, Siegfried Mantl, Adrian M Ionescu
Published in: Nanotechnology, Issue 29/9, 2018, Page(s) 095202, ISSN 0957-4484
DOI: 10.1088/1361-6528/aaa590

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Author(s): Erick Garcia-Cordero, Francesco Bellando, Junrui Zhang, Fabien Wildhaber, Johan Longo, Hoël Guérin, Adrian M. Ionescu
Published in: ACS Nano, Issue 12/12, 2018, Page(s) 12646-12656, ISSN 1936-0851
DOI: 10.1021/acsnano.8b07413

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Author(s): Nicolo Oliva, Emanuele Andrea Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian Mihai Ionescu
Published in: IEEE Journal of the Electron Devices Society, Issue 6, 2018, Page(s) 1041-1047, ISSN 2168-6734
DOI: 10.1109/jeds.2018.2817289

Hysteresis Dynamics in Double-Gated n-Type WSe 2 FETs With High-k Top Gate Dielectric

Author(s): Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu
Published in: IEEE Journal of the Electron Devices Society, Issue 7, 2019, Page(s) 1163-1169, ISSN 2168-6734
DOI: 10.1109/jeds.2019.2933745

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Author(s): Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Erick Garcia Cordero, Johan Longo, Fabien Wildhaber, Guillaume Herment, Höel Guérin, Adrian Mihai Ionescu
Published in: ACS Sensors, Issue 4/8, 2019, Page(s) 2039-2047, ISSN 2379-3694
DOI: 10.1021/acssensors.9b00597

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Author(s): Emanuele Andrea Casu, Adrian M. Ionescu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos
Published in: IEEE Journal of the Electron Devices Society, Issue 6, 2018, Page(s) 965-971, ISSN 2168-6734
DOI: 10.1109/jeds.2018.2837869

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

Author(s): Anne S Verhulst, Ali Saeidi, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu
Published in: IEEE Transactions on Electron Devices, Issue 67/1, 2020, Page(s) 377-382, ISSN 0018-9383
DOI: 10.1109/ted.2019.2954585

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Author(s): Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Gia V. Luong, Qing-Tai Zhao, Siegfried Mantl, Christian C. Enz, Adrian M. Ionescu
Published in: IEEE Electron Device Letters, Issue 38/10, 2017, Page(s) 1485-1488, ISSN 0741-3106
DOI: 10.1109/led.2017.2734943

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Author(s): Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu
Published in: Scientific Reports, Issue 9/1, 2019, ISSN 2045-2322
DOI: 10.1038/s41598-019-45628-8

MoS<inf>2</inf>/VO<inf>2</inf> vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Author(s): N. Oliva, E. A. Casu, C. Yan, A. Krammer, A. Magrez, A. Schueler, O. J. F. Martin, A. M. Ionescu
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 36.1.1-36.1.4
DOI: 10.1109/IEDM.2017.8268503

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

Author(s): Adrian M. Ionescu
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 1.2.1-1.2.8
DOI: 10.1109/IEDM.2017.8268307

Lab on skin ™ : 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

Author(s): F. Bellando, E. Garcia-Cordero, F. Wildhaber, J. Longo, H. Guerin, A. M. Ionescu
Published in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Page(s) 18.1.1-18.1.4
DOI: 10.1109/IEDM.2017.8268413

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Author(s): E.A. Casu, W.A. Vitale, N. Oliva, T. Rosca, A. Biswas, C. Alper, A. Krammer, G.V. Luong, Q.T. Zhao, S. Mantl, A. Schuler, A. Seabaugh, A.M. Ionescu
Published in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 19.3.1-19.3.4
DOI: 10.1109/IEDM.2016.7838452

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

Author(s): Nicolo Oliva, Emanuele A. Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian M. Ionescu
Published in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Page(s) 102-105
DOI: 10.1109/ESSDERC.2017.8066602

Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation

Author(s): Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu
Published in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Page(s) 78-81
DOI: 10.1109/ESSDERC.2017.8066596

Heterogeneous integration of low power pH FinFET sensors with passive capillary microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

Author(s): Erick Garcia-Cordero, Hoel Guerin, Amira Muhech, Francesco Bellando, Adrian M. Ionescu
Published in: 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, Page(s) 452-455
DOI: 10.1109/ESSDERC.2016.7599683

Steep Slope Transistors for Quantum Computing

Author(s): Adrian M. Ionescu, Teodor Rosca, Cem Alper
Published in: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Issue 1, 2018, Page(s) 56-58
DOI: 10.1109/edtm.2018.8421422

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Author(s): Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu
Published in: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018, Page(s) 10-12
DOI: 10.1109/edtm.2018.8421443

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Author(s): Nicolo Oliva, Emanuele A. Casu, Matteo Cavalieri, Adrian M. Ionescu
Published in: 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, Page(s) 114-117
DOI: 10.1109/essderc.2018.8486867

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below <tex>$\mathrm{V}_{\text{DD}}=400\text{mV}$</tex>

Author(s): Ali Saeidi, Anne S. Verhulst, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu
Published in: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Page(s) 13.4.1-13.4.4
DOI: 10.1109/iedm.2018.8614583