Milli-Volt Switch Technologies for Energy Efficient Computation and Sensing

Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection

Autori: Fatemeh Qaderi; Yannik Horst; Tobias Blatter; Maurizio Burla; Daesung Park; Ali Gilani; Juerg Leuthold; Adrian M. Ionescu
Pubblicato in: 47th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2022., Numero 21622035, 2022, ISSN 2162-2035
Editore: IEEE
DOI: 10.1109/irmmw-thz50927.2022.9895513

Co-integrated Subthermionic 2D/2D WSe 2 /SnSe 2 Vertical Tunnel FET and WSe 2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

Autori: N. Oliva, L. Capua, M. Cavalieri, A. M. Ionescu
Pubblicato in: 2019 IEEE International Electron Devices Meeting (IEDM), Numero 1/12, 2019, Pagina/e 37.2.1-37.2.4, ISBN 978-1-7281-4032-2
Editore: IEEE
DOI: 10.1109/iedm19573.2019.8993643

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Autori: M. Samizadeh Nikoo; T. Wang; P. Sohi; M. Zhu; F. Qaderi; R. A. Khadar; A. Floriduz; A. M. Ionescu; E. Matioli
Pubblicato in: 2021, ISBN 978-1-6654-2572-8
Editore: IEEE
DOI: 10.1109/iedm19574.2021.9720575

MoS<inf>2</inf>/VO<inf>2</inf> vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

Autori: N. Oliva, E. A. Casu, C. Yan, A. Krammer, A. Magrez, A. Schueler, O. J. F. Martin, A. M. Ionescu
Pubblicato in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Pagina/e 36.1.1-36.1.4, ISBN 978-1-5386-3559-9
Editore: IEEE
DOI: 10.1109/IEDM.2017.8268503

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

Autori: Adrian M. Ionescu
Pubblicato in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Pagina/e 1.2.1-1.2.8, ISBN 978-1-5386-3559-9
Editore: IEEE
DOI: 10.1109/IEDM.2017.8268307

Lab on skin ™ : 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

Autori: F. Bellando, E. Garcia-Cordero, F. Wildhaber, J. Longo, H. Guerin, A. M. Ionescu
Pubblicato in: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, Pagina/e 18.1.1-18.1.4, ISBN 978-1-5386-3559-9
Editore: IEEE
DOI: 10.1109/IEDM.2017.8268413

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Autori: E.A. Casu, W.A. Vitale, N. Oliva, T. Rosca, A. Biswas, C. Alper, A. Krammer, G.V. Luong, Q.T. Zhao, S. Mantl, A. Schuler, A. Seabaugh, A.M. Ionescu
Pubblicato in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Pagina/e 19.3.1-19.3.4, ISBN 978-1-5090-3902-9
Editore: IEEE
DOI: 10.1109/IEDM.2016.7838452

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

Autori: Nicolo Oliva, Emanuele A. Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian M. Ionescu
Pubblicato in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Pagina/e 102-105, ISBN 978-1-5090-5978-2
Editore: IEEE
DOI: 10.1109/ESSDERC.2017.8066602

Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation

Autori: Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu
Pubblicato in: 2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, Pagina/e 78-81, ISBN 978-1-5090-5978-2
Editore: IEEE
DOI: 10.1109/ESSDERC.2017.8066596

Heterogeneous integration of low power pH FinFET sensors with passive capillary microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

Autori: Erick Garcia-Cordero, Hoel Guerin, Amira Muhech, Francesco Bellando, Adrian M. Ionescu
Pubblicato in: 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, Pagina/e 452-455, ISBN 978-1-5090-2969-3
Editore: IEEE
DOI: 10.1109/ESSDERC.2016.7599683

Steep Slope Transistors for Quantum Computing

Autori: Adrian M. Ionescu, Teodor Rosca, Cem Alper
Pubblicato in: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), Numero 1, 2018, Pagina/e 56-58, ISBN 978-1-5386-3712-8
Editore: IEEE
DOI: 10.1109/edtm.2018.8421422

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Autori: Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu
Pubblicato in: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM), 2018, Pagina/e 10-12, ISBN 978-1-5386-3712-8
Editore: IEEE
DOI: 10.1109/edtm.2018.8421443

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Autori: Nicolo Oliva, Emanuele A. Casu, Matteo Cavalieri, Adrian M. Ionescu
Pubblicato in: 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, Pagina/e 114-117, ISBN 978-1-5386-5401-9
Editore: IEEE
DOI: 10.1109/essderc.2018.8486867

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below <tex>$\mathrm{V}_{\text{DD}}=400\text{mV}$</tex>

Autori: Ali Saeidi, Anne S. Verhulst, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu
Pubblicato in: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, Pagina/e 13.4.1-13.4.4, ISBN 978-1-7281-1987-8
Editore: IEEE
DOI: 10.1109/iedm.2018.8614583

Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

Autori: Florian Roth; Noémie Bidoul; Teodor Rosca; Meik Dörpinghaus; Denis Flandre; Adrian M. Ionescu; Gerhard Fettweis
Pubblicato in: 2022 2nd IEEE International Symposium on Joint Communications & Sensing (JC&S), 2022, ISBN 978-1-6654-0579-9
Editore: IEEE
DOI: 10.1109/jcs54387.2022.9743501

Extended gate field-effect-transistor for sensing cortisol stress hormone

Autori: Shokoofeh Sheibani, Luca Capua, Sadegh Kamaei, Sayedeh Shirin Afyouni Akbari, Junrui Zhang, Hoel Guerin, Adrian M. Ionescu
Pubblicato in: Communications Materials, Numero 2/1, 2021, Pagina/e 1-10, ISSN 2662-4443
Editore: Nature
DOI: 10.1038/s43246-020-00114-x

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Autori: Nicolò Oliva, Jonathan Backman, Luca Capua, Matteo Cavalieri, Mathieu Luisier, Adrian M. Ionescu
Pubblicato in: npj 2D Materials and Applications, Numero 4/1, 2020, Pagina/e 1-8, ISSN 2397-7132
Editore: Nature
DOI: 10.1038/s41699-020-0142-2

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Autori: Sadegh Kamaei, Ali Saeidi, Carlotta Gastaldi, Teodor Rosca, Luca Capua, Matteo Cavalieri and Adrian M. Ionescu
Pubblicato in: npj 2D Materials and Applications (npj 2D Mater Appl), Numero 23977132, 2021, ISSN 2397-7132
Editore: nature
DOI: 10.1038/s41699-021-00257-6

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

Autori: Amin Rassekh, Jean-Michel Sallese, Farzan Jazaeri, Morteza Fathipour, Adrian M. Ionescu
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 8, 2020, Pagina/e 939-947, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2020.3020976

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Autori: Ali Saeidi, Teodor Rosca, Elvedin Memisevic, Igor Stolichnov, Matteo Cavalieri, Lars-Erik Wernersson, Adrian M. Ionescu
Pubblicato in: Nano Letters, Numero 20/5, 2020, Pagina/e 3255-3262, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b05356

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in vanadium dioxide

Autori: Qaderi F, Rosca T, Burla M, Leuthold J, Flandre D, Ionescu A
Pubblicato in: Research square - under revision for publication in Communication Materials, Numero 26624443, 2022, ISSN 2662-4443
Editore: Nature
DOI: 10.21203/rs.3.rs-126738/v2

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Autori: Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu
Pubblicato in: Scientific Reports, Numero 7/1, 2017, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-017-00359-6

Vanadium Oxide bandstop tunable filter for Ka frequency bands based on a novel reconfigurable spiral shape defected ground plane CPW

Autori: E. A. Casu, A. A. Muller, M. Fernandez-Bolanos, A. Fumarola, A. Krammer, A. Schuler, A. M. Ionescu
Pubblicato in: IEEE Access, 2017, Pagina/e 1-1, ISSN 2169-3536
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/ACCESS.2018.2795463

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Autori: Nicoló Oliva, Emanuele Andrea Casu, Chen Yan, Anna Krammer, Teodor Rosca, Arnaud Magrez, Igor Stolichnov, Andreas Schueler, Olivier J. F. Martin, Adrian Mihai Ionescu
Pubblicato in: Scientific Reports, Numero 7/1, 2017, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-017-12950-y

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Autori: Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Gia V Luong, Qing-Tai Zhao, Siegfried Mantl, Adrian M Ionescu
Pubblicato in: Nanotechnology, Numero 29/9, 2018, Pagina/e 095202, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/aaa590

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Autori: Erick Garcia-Cordero, Francesco Bellando, Junrui Zhang, Fabien Wildhaber, Johan Longo, Hoël Guérin, Adrian M. Ionescu
Pubblicato in: ACS Nano, Numero 12/12, 2018, Pagina/e 12646-12656, ISSN 1936-0851
Editore: American Chemical Society
DOI: 10.1021/acsnano.8b07413

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Autori: Nicolo Oliva, Emanuele Andrea Casu, Wolfgang A. Vitale, Igor Stolichnov, Adrian Mihai Ionescu
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 6, 2018, Pagina/e 1041-1047, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2817289

Hysteresis Dynamics in Double-Gated n-Type WSe 2 FETs With High-k Top Gate Dielectric

Autori: Nicolo Oliva, Yury Yu Illarionov, Emanuele A. Casu, Matteo Cavalieri, Theresia Knobloch, Tibor Grasser, Adrian M. Ionescu
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 7, 2019, Pagina/e 1163-1169, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2019.2933745

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Autori: Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Erick Garcia Cordero, Johan Longo, Fabien Wildhaber, Guillaume Herment, Höel Guérin, Adrian Mihai Ionescu
Pubblicato in: ACS Sensors, Numero 4/8, 2019, Pagina/e 2039-2047, ISSN 2379-3694
Editore: ACS
DOI: 10.1021/acssensors.9b00597

Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Autori: Emanuele Andrea Casu, Adrian M. Ionescu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 6, 2018, Pagina/e 965-971, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2018.2837869

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

Autori: Anne S Verhulst, Ali Saeidi, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/1, 2020, Pagina/e 377-382, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2019.2954585

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

Autori: Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Gia V. Luong, Qing-Tai Zhao, Siegfried Mantl, Christian C. Enz, Adrian M. Ionescu
Pubblicato in: IEEE Electron Device Letters, Numero 38/10, 2017, Pagina/e 1485-1488, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2017.2734943

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Autori: Ali Saeidi, Farzan Jazaeri, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu
Pubblicato in: Scientific Reports, Numero 9/1, 2019, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-019-45628-8

Millimeter-and Terahertz-wave stochastic sensors based on reversible insulator-to-metal transition in vanadium dioxide

Autori: Fatemeh Qaderi, Teodor Rosca, Maurizio Burla, Juerg Leuthold, Denis Flandre, Adrian M. Ionescu
Pubblicato in: Nature Communications, 2021, Pagina/e 1-14, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.21203/rs.3.rs-126738/v1

Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

Autori: Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Sadegh Kamaei, Teodor Rosca, Igor Stolichnov, and Adrian Mihai Ionescu
Pubblicato in: Applied Physics Letters, Numero 10773118, 2021, ISSN 1077-3118
Editore: AIP
DOI: 10.1063/5.0052129

Subthermionic negative capacitance ion sensitive field-effect transistor

Autori: Francesco Bellando, Chetan K. Dabhi, Ali Saeidi, Carlotta Gastaldi, Yogesh S. Chauhan, and Adrian M. Ionescu
Pubblicato in: Applied Physics Letters, 2020, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0005411

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe 2 Hetero-Junction

Autori: Sadegh Kamaei, Ali Saeidi, Farzan Jazaeri, Amin Rassekh, Nicolo Oliva, Matteo Cavalieri, Benjamin Lambert, Adrian Mihai Ionescu
Pubblicato in: IEEE Electron Device Letters, Numero 41/4, 2020, Pagina/e 645-648, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.2974400

A hybrid technology platform integrating 2D materials and ferroelectric gate stacks: from steep slope logic switches to neuromorphic applications

Autori: Sadegh Kamaei, Xia Liu, Ali Saeidi, Yingfen Wei, Carlotta Gastaldi, Juergen Brugger, Adrian Ionescu
Pubblicato in: Research Square - under review in Nature Electronics, Numero 25201131, 2022, ISSN 2520-1131
Editore: Research Square
DOI: 10.21203/rs.3.rs-1416593/v1

Exploration of Negative Capacitance Devices and Technologies

Autori: Ali Saeidi
Pubblicato in: 2019
Editore: EPFL

At the end of scaling: 2D materials for computing and sensing applications

Autori: Nicolo Oliva
Pubblicato in: 2020
Editore: EPFL

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

Autori: Bellando Francesco
Pubblicato in: 2020
Editore: EPFL

Energy Efficient Sensing using Steep Slope Devices

Autori: Teodor Rosca
Pubblicato in: 2022
Editore: EPFL

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