micro-crystals Single Photon InfraREd detectors

Project Information

microSPIRE

Grant agreement ID: 766955

DOI 10.3030/766955

Project closed

EC signature date 8 August 2017

Start date 1 November 2017

End date 31 October 2021

Funded under

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Total cost € 3 106 381,25

EU contribution € 3 106 381,00

Coordinated by

POLITECNICO DI MILANO
Italy

Deliverables

Documents, reports (12)

Report on GaAs/Ge VHE growth protocols to reduce APDs

Report on the dynamics of antiphase boundaries nucleation and annihilation on faceted microcrystals interfaces

Design of (Al)GaAs quantum nanostructures based SPAD with an active lateral size up to 100 µm

Electronic design doping profile microcrystal shapedimension of an array lateral size of up to 100 m of microSPADs all connected in parallel to form a AlGaAs quantum nanostructure based SPAD The design will also include the calculation of intersubband transitions by means of kdotp modelling

Review meeting n.2

Preparation of a agenda for the review meeting presentations

Final Exploitation and Dissemination plan

Preparation of the Exploitation and Dissemination activities planned for maximizing the impacts of the project results

Report on the performances of the µSiPM

SiPM devices will be characterized by measuring photon detection efficiency darkcount rate after pulsing timing jitter PNR capability crosstalk with the corresponding temperature and voltage dependences

Report on Ge/Si VHE growth to achieve dislocations expulsion

Report on the modelling of dislocations dynamics GeSi VHE structures based on analytical models a Finite Element Method solver and atomicscale molecular dynamics simulations based on manybody empirical potentials

Report on characterization of GaAs/Ge/Si micro-crystals

Report on the characterization of GaAsAlGaAs quantum nanostructures deposited on Ge microcrystals The characterization technique will include high resolution XRD transmission electron microscopy TEM photoluminescence and Raman spectroscopy

Review meeting nr. 1

Preparation of a agenda for the review meeting presentations

Report on the characterization of Ge micro-crystals

RReport on the characterization of Ge micro-crystals deposited on patterned Si substrates. The characterization technique will include: high resolution XRD, transmission electron microscopy (TEM), photoluminescence and Raman.

Report on the characterization of Si micro-crystals

Report on the characterization of Si micro-crystals deposited on patterned substrates. The characterization technique will include transmission electron microscopy (TEM), photoluminescence and Raman spectroscopy.

Report on the performances of the µGePM

GePM devices will be characterized by measuring photon detection efficiency darkcount rate after pulsing timing jitter PNR capability crosstalk with the corresponding temperature and voltage dependences

Technical/scientific check meeting documents

Documents for the check meeting

Websites, patent fillings, videos etc. (1)

µSPIRE logo and webpage

Preparation of the project logo and setting up of the µSPIRE website.

Other (2)

Appointment of the Advisory Committee

Formation of an Advisory Committee involving EU-based companies interested in exploiting µSPIRE technologies.

Draft dissemination and exploitation plan

Preparation of the exploitation and dissemination plan according to the guidelines describe in Sec 23

Demonstrators, pilots, prototypes (5)

Delivery of Si micro-crystals

A set of samples with Si-microcrystals deposited on patterned Si substrates with optimized morphology and doping profile will be delivered for device fabrication.

Delivery of GaAs/Ge micro-crystals on patterned Si

A set of samples with GaAsAlGaAs quantum nanostructures deposited on Ge microcrystals with optimized morphology and doping profile will be delivered for device fabrication

Microfabrication a µGePM device

A GePM device will be fabricated by means of ebeam lithography wetdry etching passivation and contact deposition

Microfabrication of a µSiPM device

A µSiPM device will be fabricated by means of e-beam lithography, wet/dry etching, passivation and contact deposition.

Delivery of Ge micro-crystals deposited on patterned Si

A set of samples with Gemicrocrystals deposited on patterned Si substrates with optimized morphology and doping profile will be delivered for device fabrication

Open Research Data Pilot (1)

µSPIRE Data Management Plan

A Data Management Plan will be set up by exploiting online platforms such as the DMPonline platform.

Publications

Peer reviewed articles (32)

Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM

Author(s): P. Kükelhan, A. Beyer, S. Firoozabadi, T. Hepp, K. Volz
Published in: Ultramicroscopy, Issue 201, 2019, Page(s) 49-57, ISSN 0304-3991
Publisher: Elsevier BV
DOI: 10.1016/j.ultramic.2019.03.005

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy.

Author(s): Knut Müller-Caspary; Saleh Firoozabadi; Hoel Laurent Robert; Kerstin Volz; Andreas Rosenauer; Florian F. Krause; Tim Grieb; Damien Heimes; P. Kükelhan; Marco Schowalter; Andreas M. Beyer
Published in: Scientific Reports, Issue 10, 2020, Page(s) 17890, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-020-74434-w

A singlet-triplet hole spin qubit in planar Ge

Author(s): Daniel Jirovec, Andrea Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, Josip Kukucka, Oliver Sagi, Frederico Martins, Jaime Saez-Mollejo, Ivan Prieto, Maksim Borovkov, Jordi Arbiol, Daniel Chrastina, Giovanni Isella and Georgios Katsaros
Published in: Nature Materials, Issue 20, 2021, Page(s) 1106-1112, ISSN 1476-1122
Publisher: Nature Publishing Group
DOI: 10.1038/s41563-021-01022-2

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Author(s): Monica Bollani, Alexey Fedorov, Marco Albani, Sergio Bietti, Roberto Bergamaschini, Francesco Montalenti, Andrea Ballabio, Leo Miglio, Stefano Sanguinetti
Published in: Crystals, Issue 10(2), 2020, Page(s) 57, ISSN 2073-4352
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst10020057

Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm

Author(s): Miguel Montesinos-Ballester, Vladyslav Vakarin, Joan Manel Ramirez, Qiankun Liu, Carlos Alonso-Ramos, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Lucas Deniel, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Published in: Communications Materials, Issue 1/1, 2020, ISSN 2662-4443
Publisher: COMMUNICATION MATERIALS
DOI: 10.1038/s43246-019-0003-8

Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations

Author(s): Barbisan, L.; Marzegalli, A.; Montalenti, F.
Published in: Scientific Reports, Issue 12, 2022, Page(s) 3235, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-022-07206-3

Photonic Band Gap and Light Routing in Self-Assembled Lattices of Epitaxial Ge-on-Si Microstructures

Author(s): Jacopo Pedrini, Andrea Barzaghi, Joao Valente, Douglas J. Paul, Giovanni Isella, Fabio Pezzoli
Published in: Physical Review Applied, Issue 16, 2021, Page(s) 064024 -1 064024-7, ISSN 2331-7019
Publisher: Americal Physical Society
DOI: 10.1103/physrevapplied.16.064024

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

Author(s): Andrea Ballabio, Sergio Bietti, Andrea Scaccabarozzi, Luca Esposito, Stefano Vichi, Alexey Fedorov, Anna Vinattieri, Cosimo Mannucci, Francesco Biccari, Akos Nemcsis, Lajos Toth, Leo Miglio, Massimo Gurioli, Giovanni Isella, Stefano Sanguinetti
Published in: Scientific Reports, Issue 9/1, 2019, Page(s) 17529, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-019-53949-x

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

Author(s): Marco Albani, Roberto Bergamaschini, Andrea Barzaghi, Marco Salvalaglio, Joao Valente, Douglas J. Paul, Axel Voigt, Giovanni Isella, Francesco Montalenti
Published in: Scientific Reports, Issue 11/1, 2021, ISSN 2045-2322
Publisher: Nature Publishing Group
DOI: 10.1038/s41598-021-98285-1

On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength

Author(s): Miguel Montesinos-Ballester, Christian Lafforgue, Jacopo Frigerio, Andrea Ballabio, Vladyslav Vakarin, Qiankun Liu, Joan Manel Ramirez, Xavier Le Roux, David Bouville, Andrea Barzaghi, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Published in: ACS Photonics, Issue 7/12, 2020, Page(s) 3423-3429, ISSN 2330-4022
Publisher: American Chemical Society
DOI: 10.1021/acsphotonics.0c01232

Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals

Author(s): Andrea Barzaghi; Andrea Ballabio; Fabio Pezzoli; Jacopo Pedrini; Giovanni Isella; Paolo Biagioni; Emiliano Bonera; Maura Bonzi
Published in: Optics Express, Issue 28, 2020, Page(s) 24981, ISSN 1094-4087
Publisher: Optical Society of America
DOI: 10.1364/oe.398098

Doubly degenerate diffuse interface models of anisotropic surface diffusion

Author(s): Marco Salvalaglio, Maximilian Selch, Axel Voigt, Steven M. Wise
Published in: Mathematical Methods in the Applied Sciences, Issue 44/7, 2021, Page(s) 5406-5417, ISSN 0170-4214
Publisher: John Wiley & Sons Inc.
DOI: 10.1002/mma.7118

Graphene/Ge microcrystal photodetectors with enhanced infrared responsivity

Author(s): Virginia Falcone, Andrea Ballabio, Andrea Barzaghi, Carlo Zucchetti, Luca Anzi, Federico Bottegoni, Jacopo Frigerio, Roman Sordan, Paolo Biagioni and Giovanni Isella
Published in: APL Photonics, Issue 7, 2022, Page(s) 056106, ISSN 2378-0967
Publisher: American Institute of Physics
DOI: 10.1063/5.0082421

Dynamics of hole singlet triplet qubits with large g-factor differences

Author(s): Daniel Jirovec; Philipp M. Mutter; Andrea Hofmann; Alessandro Crippa; Marek Rychetsky; David L. Craig; Josip Kukucka; Frederico Martins; Andrea Ballabio; Natalia Ares; Daniel Chrastina; Giovanni Isella; Guido Burkard; Georgios Katsaros
Published in: Physical Review Letters, Issue 128, 2022, Page(s) 126803, ISSN 0031-9007
Publisher: American Physical Society
DOI: 10.1103/physrevlett.128.126803

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Author(s): Andreas Beyer, Manveer Singh Munde, Saleh Firoozabadi, Damien Heimes, Tim Grieb, Andreas Rosenauer, Knut Müller-Caspary, Kerstin Volz
Published in: Nano Letters, Issue 21/5, 2021, Page(s) 2018-2025, ISSN 1530-6984
Publisher: American Chemical Society
DOI: 10.1021/acs.nanolett.0c04544

Optimization of imaging conditions for composition determination by annular dark field STEM

Author(s): S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
Published in: Ultramicroscopy, Issue 230, 2021, Page(s) 113387, ISSN 0304-3991
Publisher: Elsevier BV
DOI: 10.1016/j.ultramic.2021.113387

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

Author(s): Andrea Barzaghi; Giovanni Isella; Marco Salvalaglio; Andrea Ballabio; Roberto Bergamaschini; João Valente; Axel Voigt; Douglas J. Paul; M Albani; Andreas Beyer; Francesco Montalenti; Saleh Firoozabadi; Leo Miglio; Kerstin Volz
Published in: Crystal Growth and Design, Issue 20, 2020, Page(s) 2914-2920, ISSN 1528-7483
Publisher: American Chemical Society
DOI: 10.1021/acs.cgd.9b01312

Ge-rich graded SiGe waveguides and interferometers from 5 to 11 mu m wavelength range

Author(s): Miguel Montesinos-Ballester, Vladyslav Vakarin, Qiankun Liu, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini
Published in: Optics Express, Issue 9, 2020, Page(s) 12771, ISSN 1094-4087
Publisher: Optical Society of America
DOI: 10.1364/oe.391464

Doubly degenerate diffuse interface models of surface diffusion

Author(s): Marco Salvalaglio, Axel Voigt, Steven M. Wise
Published in: Mathematical Methods in the Applied Sciences, Issue 44/7, 2021, Page(s) 5385-5405, ISSN 0170-4214
Publisher: John Wiley & Sons Inc.
DOI: 10.1002/mma.7116

Dislocation-Free SiGe/Si Heterostructures

Author(s): Francesco Montalenti, Fabrizio Rovaris, Roberto Bergamaschini, Leo Miglio, Marco Salvalaglio, Giovanni Isella, Fabio Isa, Hans von Känel
Published in: Crystals, Issue 8/6, 2018, Page(s) 257, ISSN 2073-4352
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst8060257

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Author(s): Marco Albani, Lea Ghisalberti, Roberto Bergamaschini, Martin Friedl, Marco Salvalaglio, Axel Voigt, Francesco Montalenti, Gözde Tütüncüoglu, Anna Fontcuberta i Morral, Leo Miglio
Published in: Physical Review Materials, Issue 2/9, 2018, ISSN 2475-9953
Publisher: Physical Review Materials
DOI: 10.1103/PhysRevMaterials.2.093404

On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 84 µm

Author(s): Qiankun Liu, Joan Manel Ramirez, Vladyslav Vakarin, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Enrico Talamas Simola, Carlos Alonso-Ramos, Daniel Benedikovic, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Published in: Optics Express, Issue 26/26, 2018, Page(s) 34366, ISSN 1094-4087
Publisher: Optical Society of America
DOI: 10.1364/OE.26.034366

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Author(s): Marco Albani, Roberto Bergamaschini, Marco Salvalaglio, Axel Voigt, Leo Miglio, Francesco Montalenti
Published in: physica status solidi (b), 2019, Page(s) 1800518, ISSN 0370-1972
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201800518

Broadband integrated racetrack ring resonators for long-wave infrared photonics

Author(s): Joan Manel Ramirez, Qiankun Liu, Vladyslav Vakarin, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Carlos Alonso-Ramos, Enrico Talamas Simola, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Published in: Optics Letters, Issue 44/2, 2019, Page(s) 407, ISSN 0146-9592
Publisher: Optical Society of America
DOI: 10.1364/OL.44.000407

Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range

Author(s): E. Talamas Simola, A. De Iacovo, J. Frigerio, A. Ballabio, A. Fabbri, G. Isella, L. Colace
Published in: Optics Express, Issue 27/6, 2019, Page(s) 8529, ISSN 1094-4087
Publisher: Optical Society of America
DOI: 10.1364/oe.27.008529

Magnetotransport in Bi 2 Se 3 thin films epitaxially grown on Ge(111)

Author(s): T. Guillet, A. Marty, C. Beigné, C. Vergnaud, M.-T. Dau, P. Noël, J. Frigerio, G. Isella, M. Jamet
Published in: AIP Advances, Issue 8/11, 2018, Page(s) 115125, ISSN 2158-3226
Publisher: American Institute of Physics Inc.
DOI: 10.1063/1.5048547

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM

Author(s): L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J.O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
Published in: Ultramicroscopy, Issue 200, 2019, Page(s) 84-96, ISSN 0304-3991
Publisher: Elsevier BV
DOI: 10.1016/j.ultramic.2019.02.009

Ge/SiGe parabolic quantum wells

Author(s): Andrea Ballabio, Jacopo Frigerio, Saleh Firoozabadi, Daniel Chrastina, Andreas Beyer, Kerstin Volz, Giovanni Isella
Published in: Journal of Physics D: Applied Physics, Issue 52/41, 2019, Page(s) 415105, ISSN 0022-3727
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ab2d34

Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM

Author(s): P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J.O. Oelerich, W. Stolz, K. Volz
Published in: Journal of Crystal Growth, Issue 524, 2019, Page(s) 125180, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.125180

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Author(s): Daniele Lanzoni; Fabrizio Rovaris; Francesco Montalenti
Published in: Crystals, Issue 10, 2020, Page(s) 661, ISSN 2073-4352
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst10080661

Composition determination for quaternary III-V semiconductors by aberration-corrected STEM

Author(s): P. Kükelhan; Andreas Beyer; Saleh Firoozabadi; T. Hepp; Kerstin Volz
Published in: Ultramicroscopy, Issue 206, 2019, Page(s) 112814, ISSN 0304-3991
Publisher: Elsevier BV
DOI: 10.1016/j.ultramic.2019.112814

CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

Author(s): Enrico Talamas Simola, Vivien Kiyek, Andrea Ballabio, Viktoria Schlykow, Jacopo Frigerio, Carlo Zucchetti, Andrea De Iacovo, Lorenzo Colace, Yuji Yamamoto, Giovanni Capellini, Detlev Grützmacher, Dan Buca, Giovanni Isella
Published in: ACS Photonics, Issue 8/7, 2021, Page(s) 2166-2173, ISSN 2330-4022
Publisher: American Chemical Society
DOI: 10.1021/acsphotonics.1c00617