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micro-crystals Single Photon InfraREd detectors

Risultati finali

µSPIRE logo and webpage

Preparation of the project logo and setting up of the µSPIRE website.

Appointment of the Advisory Committee

Formation of an Advisory Committee involving EU-based companies interested in exploiting µSPIRE technologies.

Draft dissemination and exploitation plan

Preparation of the exploitation and dissemination plan according to the guidelines describe in Sec. 2.3

Delivery of Si micro-crystals

A set of samples with Si-microcrystals deposited on patterned Si substrates with optimized morphology and doping profile will be delivered for device fabrication.

Microfabrication of a µSiPM device

A µSiPM device will be fabricated by means of e-beam lithography, wet/dry etching, passivation and contact deposition.

µSPIRE Data Management Plan

A Data Management Plan will be set up by exploiting online platforms such as the DMPonline platform.

Review meeting nr. 1

Preparation of a agenda for the review meeting presentations.

Report on the characterization of Ge micro-crystals

RReport on the characterization of Ge micro-crystals deposited on patterned Si substrates. The characterization technique will include: high resolution XRD, transmission electron microscopy (TEM), photoluminescence and Raman.

Report on the characterization of Si micro-crystals

Report on the characterization of Si micro-crystals deposited on patterned substrates. The characterization technique will include transmission electron microscopy (TEM), photoluminescence and Raman spectroscopy.

Technical/scientific check meeting documents

Documents for the check meeting


Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy.

Autori: Knut Müller-Caspary; Saleh Firoozabadi; Hoel Laurent Robert; Kerstin Volz; Andreas Rosenauer; Florian F. Krause; Tim Grieb; Damien Heimes; P. Kükelhan; Marco Schowalter; Andreas M. Beyer
Pubblicato in: Scientific Reports, Vol 10, Iss 1, Pp 1-15 (2020), Issue 10, 2020, Page(s) 17890, ISSN 2045-2322
DOI: 10.1038/s41598-020-74434-w

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Autori: Monica Bollani, Alexey Fedorov, Marco Albani, Sergio Bietti, Roberto Bergamaschini, Francesco Montalenti, Andrea Ballabio, Leo Miglio, Stefano Sanguinetti
Pubblicato in: Crystals, Issue 10(2), 2020, Page(s) 57, ISSN 2073-4352
DOI: 10.3390/cryst10020057

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

Autori: Andrea Ballabio, Sergio Bietti, Andrea Scaccabarozzi, Luca Esposito, Stefano Vichi, Alexey Fedorov, Anna Vinattieri, Cosimo Mannucci, Francesco Biccari, Akos Nemcsis, Lajos Toth, Leo Miglio, Massimo Gurioli, Giovanni Isella, Stefano Sanguinetti
Pubblicato in: Scientific Reports, Issue 9/1, 2019, Page(s) 17529, ISSN 2045-2322
DOI: 10.1038/s41598-019-53949-x

On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength

Autori: Miguel Montesinos-Ballester, Christian Lafforgue, Jacopo Frigerio, Andrea Ballabio, Vladyslav Vakarin, Qiankun Liu, Joan Manel Ramirez, Xavier Le Roux, David Bouville, Andrea Barzaghi, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: ACS Photonics, Issue 7/12, 2020, Page(s) 3423-3429, ISSN 2330-4022
DOI: 10.1021/acsphotonics.0c01232

Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals

Autori: Andrea Barzaghi; Andrea Ballabio; Fabio Pezzoli; Jacopo Pedrini; Giovanni Isella; Paolo Biagioni; Emiliano Bonera; Maura Bonzi
Pubblicato in: Optics Express, Issue 28, 2020, Page(s) 24981, ISSN 1094-4087
DOI: 10.1364/oe.398098

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

Autori: Andrea Barzaghi; Giovanni Isella; Marco Salvalaglio; Andrea Ballabio; Roberto Bergamaschini; João Valente; Axel Voigt; Douglas J. Paul; M Albani; Andreas Beyer; Francesco Montalenti; Saleh Firoozabadi; Leo Miglio; Kerstin Volz
Pubblicato in: Crystal Growth and Design, Issue 20, 2020, Page(s) 2914-2920, ISSN 1528-7483
DOI: 10.1021/acs.cgd.9b01312

Ge-rich graded SiGe waveguides and interferometers from 5 to 11 mu m wavelength range

Autori: Miguel Montesinos-Ballester, Vladyslav Vakarin, Qiankun Liu, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini
Pubblicato in: Optics Express, Issue 9, 2020, Page(s) 12771, ISSN 1094-4087
DOI: 10.1364/oe.391464

Dislocation-Free SiGe/Si Heterostructures

Autori: Francesco Montalenti, Fabrizio Rovaris, Roberto Bergamaschini, Leo Miglio, Marco Salvalaglio, Giovanni Isella, Fabio Isa, Hans von Känel
Pubblicato in: Crystals, Issue 8/6, 2018, Page(s) 257, ISSN 2073-4352
DOI: 10.3390/cryst8060257

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Autori: Marco Albani, Lea Ghisalberti, Roberto Bergamaschini, Martin Friedl, Marco Salvalaglio, Axel Voigt, Francesco Montalenti, Gözde Tütüncüoglu, Anna Fontcuberta i Morral, Leo Miglio
Pubblicato in: Physical Review Materials, Issue 2/9, 2018, ISSN 2475-9953
DOI: 10.1103/PhysRevMaterials.2.093404

On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 84 µm

Autori: Qiankun Liu, Joan Manel Ramirez, Vladyslav Vakarin, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Enrico Talamas Simola, Carlos Alonso-Ramos, Daniel Benedikovic, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: Optics Express, Issue 26/26, 2018, Page(s) 34366, ISSN 1094-4087
DOI: 10.1364/OE.26.034366

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Autori: Marco Albani, Roberto Bergamaschini, Marco Salvalaglio, Axel Voigt, Leo Miglio, Francesco Montalenti
Pubblicato in: physica status solidi (b), 2019, Page(s) 1800518, ISSN 0370-1972
DOI: 10.1002/pssb.201800518

Broadband integrated racetrack ring resonators for long-wave infrared photonics

Autori: Joan Manel Ramirez, Qiankun Liu, Vladyslav Vakarin, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Carlos Alonso-Ramos, Enrico Talamas Simola, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: Optics Letters, Issue 44/2, 2019, Page(s) 407, ISSN 0146-9592
DOI: 10.1364/OL.44.000407

Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range

Autori: E. Talamas Simola, A. De Iacovo, J. Frigerio, A. Ballabio, A. Fabbri, G. Isella, L. Colace
Pubblicato in: Optics Express, Issue 27/6, 2019, Page(s) 8529, ISSN 1094-4087
DOI: 10.1364/oe.27.008529

Magnetotransport in Bi 2 Se 3 thin films epitaxially grown on Ge(111)

Autori: T. Guillet, A. Marty, C. Beigné, C. Vergnaud, M.-T. Dau, P. Noël, J. Frigerio, G. Isella, M. Jamet
Pubblicato in: AIP Advances, Issue 8/11, 2018, Page(s) 115125, ISSN 2158-3226
DOI: 10.1063/1.5048547

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM

Autori: L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J.O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
Pubblicato in: Ultramicroscopy, Issue 200, 2019, Page(s) 84-96, ISSN 0304-3991
DOI: 10.1016/j.ultramic.2019.02.009

Ge/SiGe parabolic quantum wells

Autori: Andrea Ballabio, Jacopo Frigerio, Saleh Firoozabadi, Daniel Chrastina, Andreas Beyer, Kerstin Volz, Giovanni Isella
Pubblicato in: Journal of Physics D: Applied Physics, Issue 52/41, 2019, Page(s) 415105, ISSN 0022-3727
DOI: 10.1088/1361-6463/ab2d34

Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM

Autori: P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J.O. Oelerich, W. Stolz, K. Volz
Pubblicato in: Journal of Crystal Growth, Issue 524, 2019, Page(s) 125180, ISSN 0022-0248
DOI: 10.1016/j.jcrysgro.2019.125180

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Autori: Daniele Lanzoni; Fabrizio Rovaris; Francesco Montalenti
Pubblicato in: Crystals, Issue 10, 2020, Page(s) 661, ISSN 2073-4352
DOI: 10.3390/cryst10080661

Composition determination for quaternary III-V semiconductors by aberration-corrected STEM

Autori: P. Kükelhan; Andreas Beyer; Saleh Firoozabadi; T. Hepp; Kerstin Volz
Pubblicato in: Ultramicroscopy, Issue 206, 2019, Page(s) 112814, ISSN 0304-3991
DOI: 10.1016/j.ultramic.2019.112814