micro-crystals Single Photon InfraREd detectors

Informazioni relative al progetto

microSPIRE

ID dell’accordo di sovvenzione: 766955

DOI 10.3030/766955

Progetto chiuso

Data della firma CE 8 Agosto 2017

Data di avvio 1 Novembre 2017

Data di completamento 31 Ottobre 2021

Finanziato da

• EXCELLENT SCIENCE - Future and Emerging Technologies (FET)

Costo totale € 3 106 381,25

Contributo UE € 3 106 381,00

Coordinato da

POLITECNICO DI MILANO
Italy

Risultati finali

Documents, reports (12)

Report on GaAs/Ge VHE growth protocols to reduce APDs

Report on the dynamics of antiphase boundaries nucleation and annihilation on faceted microcrystals interfaces

Design of (Al)GaAs quantum nanostructures based SPAD with an active lateral size up to 100 µm

Electronic design doping profile microcrystal shapedimension of an array lateral size of up to 100 m of microSPADs all connected in parallel to form a AlGaAs quantum nanostructure based SPAD The design will also include the calculation of intersubband transitions by means of kdotp modelling

Review meeting n.2

Preparation of a agenda for the review meeting presentations

Final Exploitation and Dissemination plan

Preparation of the Exploitation and Dissemination activities planned for maximizing the impacts of the project results

Report on the performances of the µSiPM

SiPM devices will be characterized by measuring photon detection efficiency darkcount rate after pulsing timing jitter PNR capability crosstalk with the corresponding temperature and voltage dependences

Report on Ge/Si VHE growth to achieve dislocations expulsion

Report on the modelling of dislocations dynamics GeSi VHE structures based on analytical models a Finite Element Method solver and atomicscale molecular dynamics simulations based on manybody empirical potentials

Report on characterization of GaAs/Ge/Si micro-crystals

Report on the characterization of GaAsAlGaAs quantum nanostructures deposited on Ge microcrystals The characterization technique will include high resolution XRD transmission electron microscopy TEM photoluminescence and Raman spectroscopy

Review meeting nr. 1

Preparation of a agenda for the review meeting presentations

Report on the characterization of Ge micro-crystals

RReport on the characterization of Ge micro-crystals deposited on patterned Si substrates. The characterization technique will include: high resolution XRD, transmission electron microscopy (TEM), photoluminescence and Raman.

Report on the characterization of Si micro-crystals

Report on the characterization of Si micro-crystals deposited on patterned substrates. The characterization technique will include transmission electron microscopy (TEM), photoluminescence and Raman spectroscopy.

Report on the performances of the µGePM

GePM devices will be characterized by measuring photon detection efficiency darkcount rate after pulsing timing jitter PNR capability crosstalk with the corresponding temperature and voltage dependences

Technical/scientific check meeting documents

Documents for the check meeting

Websites, patent fillings, videos etc. (1)

µSPIRE logo and webpage

Preparation of the project logo and setting up of the µSPIRE website.

Other (2)

Appointment of the Advisory Committee

Formation of an Advisory Committee involving EU-based companies interested in exploiting µSPIRE technologies.

Draft dissemination and exploitation plan

Preparation of the exploitation and dissemination plan according to the guidelines describe in Sec 23

Demonstrators, pilots, prototypes (5)

Delivery of Si micro-crystals

A set of samples with Si-microcrystals deposited on patterned Si substrates with optimized morphology and doping profile will be delivered for device fabrication.

Delivery of GaAs/Ge micro-crystals on patterned Si

A set of samples with GaAsAlGaAs quantum nanostructures deposited on Ge microcrystals with optimized morphology and doping profile will be delivered for device fabrication

Microfabrication a µGePM device

A GePM device will be fabricated by means of ebeam lithography wetdry etching passivation and contact deposition

Microfabrication of a µSiPM device

A µSiPM device will be fabricated by means of e-beam lithography, wet/dry etching, passivation and contact deposition.

Delivery of Ge micro-crystals deposited on patterned Si

A set of samples with Gemicrocrystals deposited on patterned Si substrates with optimized morphology and doping profile will be delivered for device fabrication

Open Research Data Pilot (1)

µSPIRE Data Management Plan

A Data Management Plan will be set up by exploiting online platforms such as the DMPonline platform.

Pubblicazioni

Peer reviewed articles (32)

Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM

Autori: P. Kükelhan, A. Beyer, S. Firoozabadi, T. Hepp, K. Volz
Pubblicato in: Ultramicroscopy, Numero 201, 2019, Pagina/e 49-57, ISSN 0304-3991
Editore: Elsevier BV
DOI: 10.1016/j.ultramic.2019.03.005

Influence of plasmon excitations on atomic-resolution quantitative 4D scanning transmission electron microscopy.

Autori: Knut Müller-Caspary; Saleh Firoozabadi; Hoel Laurent Robert; Kerstin Volz; Andreas Rosenauer; Florian F. Krause; Tim Grieb; Damien Heimes; P. Kükelhan; Marco Schowalter; Andreas M. Beyer
Pubblicato in: Scientific Reports, Numero 10, 2020, Pagina/e 17890, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-020-74434-w

A singlet-triplet hole spin qubit in planar Ge

Autori: Daniel Jirovec, Andrea Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, Josip Kukucka, Oliver Sagi, Frederico Martins, Jaime Saez-Mollejo, Ivan Prieto, Maksim Borovkov, Jordi Arbiol, Daniel Chrastina, Giovanni Isella and Georgios Katsaros
Pubblicato in: Nature Materials, Numero 20, 2021, Pagina/e 1106-1112, ISSN 1476-1122
Editore: Nature Publishing Group
DOI: 10.1038/s41563-021-01022-2

Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study

Autori: Monica Bollani, Alexey Fedorov, Marco Albani, Sergio Bietti, Roberto Bergamaschini, Francesco Montalenti, Andrea Ballabio, Leo Miglio, Stefano Sanguinetti
Pubblicato in: Crystals, Numero 10(2), 2020, Pagina/e 57, ISSN 2073-4352
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst10020057

Optical modulation in Ge-rich SiGe waveguides in the mid-infrared wavelength range up to 11 µm

Autori: Miguel Montesinos-Ballester, Vladyslav Vakarin, Joan Manel Ramirez, Qiankun Liu, Carlos Alonso-Ramos, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Lucas Deniel, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: Communications Materials, Numero 1/1, 2020, ISSN 2662-4443
Editore: COMMUNICATION MATERIALS
DOI: 10.1038/s43246-019-0003-8

Atomic-scale insights on the formation of ordered arrays of edge dislocations in Ge/Si(001) films via molecular dynamics simulations

Autori: Barbisan, L.; Marzegalli, A.; Montalenti, F.
Pubblicato in: Scientific Reports, Numero 12, 2022, Pagina/e 3235, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-022-07206-3

Photonic Band Gap and Light Routing in Self-Assembled Lattices of Epitaxial Ge-on-Si Microstructures

Autori: Jacopo Pedrini, Andrea Barzaghi, Joao Valente, Douglas J. Paul, Giovanni Isella, Fabio Pezzoli
Pubblicato in: Physical Review Applied, Numero 16, 2021, Pagina/e 064024 -1 064024-7, ISSN 2331-7019
Editore: Americal Physical Society
DOI: 10.1103/physrevapplied.16.064024

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

Autori: Andrea Ballabio, Sergio Bietti, Andrea Scaccabarozzi, Luca Esposito, Stefano Vichi, Alexey Fedorov, Anna Vinattieri, Cosimo Mannucci, Francesco Biccari, Akos Nemcsis, Lajos Toth, Leo Miglio, Massimo Gurioli, Giovanni Isella, Stefano Sanguinetti
Pubblicato in: Scientific Reports, Numero 9/1, 2019, Pagina/e 17529, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-019-53949-x

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

Autori: Marco Albani, Roberto Bergamaschini, Andrea Barzaghi, Marco Salvalaglio, Joao Valente, Douglas J. Paul, Axel Voigt, Giovanni Isella, Francesco Montalenti
Pubblicato in: Scientific Reports, Numero 11/1, 2021, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-021-98285-1

On-Chip Mid-Infrared Supercontinuum Generation from 3 to 13 μm Wavelength

Autori: Miguel Montesinos-Ballester, Christian Lafforgue, Jacopo Frigerio, Andrea Ballabio, Vladyslav Vakarin, Qiankun Liu, Joan Manel Ramirez, Xavier Le Roux, David Bouville, Andrea Barzaghi, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: ACS Photonics, Numero 7/12, 2020, Pagina/e 3423-3429, ISSN 2330-4022
Editore: American Chemical Society
DOI: 10.1021/acsphotonics.0c01232

Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals

Autori: Andrea Barzaghi; Andrea Ballabio; Fabio Pezzoli; Jacopo Pedrini; Giovanni Isella; Paolo Biagioni; Emiliano Bonera; Maura Bonzi
Pubblicato in: Optics Express, Numero 28, 2020, Pagina/e 24981, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.398098

Doubly degenerate diffuse interface models of anisotropic surface diffusion

Autori: Marco Salvalaglio, Maximilian Selch, Axel Voigt, Steven M. Wise
Pubblicato in: Mathematical Methods in the Applied Sciences, Numero 44/7, 2021, Pagina/e 5406-5417, ISSN 0170-4214
Editore: John Wiley & Sons Inc.
DOI: 10.1002/mma.7118

Graphene/Ge microcrystal photodetectors with enhanced infrared responsivity

Autori: Virginia Falcone, Andrea Ballabio, Andrea Barzaghi, Carlo Zucchetti, Luca Anzi, Federico Bottegoni, Jacopo Frigerio, Roman Sordan, Paolo Biagioni and Giovanni Isella
Pubblicato in: APL Photonics, Numero 7, 2022, Pagina/e 056106, ISSN 2378-0967
Editore: American Institute of Physics
DOI: 10.1063/5.0082421

Dynamics of hole singlet triplet qubits with large g-factor differences

Autori: Daniel Jirovec; Philipp M. Mutter; Andrea Hofmann; Alessandro Crippa; Marek Rychetsky; David L. Craig; Josip Kukucka; Frederico Martins; Andrea Ballabio; Natalia Ares; Daniel Chrastina; Giovanni Isella; Guido Burkard; Georgios Katsaros
Pubblicato in: Physical Review Letters, Numero 128, 2022, Pagina/e 126803, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/physrevlett.128.126803

Quantitative Characterization of Nanometer-Scale Electric Fields via Momentum-Resolved STEM

Autori: Andreas Beyer, Manveer Singh Munde, Saleh Firoozabadi, Damien Heimes, Tim Grieb, Andreas Rosenauer, Knut Müller-Caspary, Kerstin Volz
Pubblicato in: Nano Letters, Numero 21/5, 2021, Pagina/e 2018-2025, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.0c04544

Optimization of imaging conditions for composition determination by annular dark field STEM

Autori: S. Firoozabadi, P. Kükelhan, T. Hepp, A. Beyer, K. Volz
Pubblicato in: Ultramicroscopy, Numero 230, 2021, Pagina/e 113387, ISSN 0304-3991
Editore: Elsevier BV
DOI: 10.1016/j.ultramic.2021.113387

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

Autori: Andrea Barzaghi; Giovanni Isella; Marco Salvalaglio; Andrea Ballabio; Roberto Bergamaschini; João Valente; Axel Voigt; Douglas J. Paul; M Albani; Andreas Beyer; Francesco Montalenti; Saleh Firoozabadi; Leo Miglio; Kerstin Volz
Pubblicato in: Crystal Growth and Design, Numero 20, 2020, Pagina/e 2914-2920, ISSN 1528-7483
Editore: American Chemical Society
DOI: 10.1021/acs.cgd.9b01312

Ge-rich graded SiGe waveguides and interferometers from 5 to 11 mu m wavelength range

Autori: Miguel Montesinos-Ballester, Vladyslav Vakarin, Qiankun Liu, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Andrea Barzaghi, Carlos Alonso-Ramos, Laurent Vivien, Giovanni Isella, and Delphine Marris-Morini
Pubblicato in: Optics Express, Numero 9, 2020, Pagina/e 12771, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.391464

Doubly degenerate diffuse interface models of surface diffusion

Autori: Marco Salvalaglio, Axel Voigt, Steven M. Wise
Pubblicato in: Mathematical Methods in the Applied Sciences, Numero 44/7, 2021, Pagina/e 5385-5405, ISSN 0170-4214
Editore: John Wiley & Sons Inc.
DOI: 10.1002/mma.7116

Dislocation-Free SiGe/Si Heterostructures

Autori: Francesco Montalenti, Fabrizio Rovaris, Roberto Bergamaschini, Leo Miglio, Marco Salvalaglio, Giovanni Isella, Fabio Isa, Hans von Känel
Pubblicato in: Crystals, Numero 8/6, 2018, Pagina/e 257, ISSN 2073-4352
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst8060257

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Autori: Marco Albani, Lea Ghisalberti, Roberto Bergamaschini, Martin Friedl, Marco Salvalaglio, Axel Voigt, Francesco Montalenti, Gözde Tütüncüoglu, Anna Fontcuberta i Morral, Leo Miglio
Pubblicato in: Physical Review Materials, Numero 2/9, 2018, ISSN 2475-9953
Editore: Physical Review Materials
DOI: 10.1103/PhysRevMaterials.2.093404

On-chip Bragg grating waveguides and Fabry-Perot resonators for long-wave infrared operation up to 84 µm

Autori: Qiankun Liu, Joan Manel Ramirez, Vladyslav Vakarin, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Enrico Talamas Simola, Carlos Alonso-Ramos, Daniel Benedikovic, David Bouville, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: Optics Express, Numero 26/26, 2018, Pagina/e 34366, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/OE.26.034366

Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling

Autori: Marco Albani, Roberto Bergamaschini, Marco Salvalaglio, Axel Voigt, Leo Miglio, Francesco Montalenti
Pubblicato in: physica status solidi (b), 2019, Pagina/e 1800518, ISSN 0370-1972
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201800518

Broadband integrated racetrack ring resonators for long-wave infrared photonics

Autori: Joan Manel Ramirez, Qiankun Liu, Vladyslav Vakarin, Xavier Le Roux, Jacopo Frigerio, Andrea Ballabio, Carlos Alonso-Ramos, Enrico Talamas Simola, Laurent Vivien, Giovanni Isella, Delphine Marris-Morini
Pubblicato in: Optics Letters, Numero 44/2, 2019, Pagina/e 407, ISSN 0146-9592
Editore: Optical Society of America
DOI: 10.1364/OL.44.000407

Voltage-tunable dual-band Ge/Si photodetector operating in VIS and NIR spectral range

Autori: E. Talamas Simola, A. De Iacovo, J. Frigerio, A. Ballabio, A. Fabbri, G. Isella, L. Colace
Pubblicato in: Optics Express, Numero 27/6, 2019, Pagina/e 8529, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.27.008529

Magnetotransport in Bi 2 Se 3 thin films epitaxially grown on Ge(111)

Autori: T. Guillet, A. Marty, C. Beigné, C. Vergnaud, M.-T. Dau, P. Noël, J. Frigerio, G. Isella, M. Jamet
Pubblicato in: AIP Advances, Numero 8/11, 2018, Pagina/e 115125, ISSN 2158-3226
Editore: American Institute of Physics Inc.
DOI: 10.1063/1.5048547

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM

Autori: L. Duschek, P. Kükelhan, A. Beyer, S. Firoozabadi, J.O. Oelerich, C. Fuchs, W. Stolz, A. Ballabio, G. Isella, K. Volz
Pubblicato in: Ultramicroscopy, Numero 200, 2019, Pagina/e 84-96, ISSN 0304-3991
Editore: Elsevier BV
DOI: 10.1016/j.ultramic.2019.02.009

Ge/SiGe parabolic quantum wells

Autori: Andrea Ballabio, Jacopo Frigerio, Saleh Firoozabadi, Daniel Chrastina, Andreas Beyer, Kerstin Volz, Giovanni Isella
Pubblicato in: Journal of Physics D: Applied Physics, Numero 52/41, 2019, Pagina/e 415105, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ab2d34

Segregation at interfaces in (GaIn)As/Ga(AsSb)/(GaIn)As- quantum well heterostructures explored by atomic resolution STEM

Autori: P. Kükelhan, S. Firoozabadi, A. Beyer, L. Duschek, C. Fuchs, J.O. Oelerich, W. Stolz, K. Volz
Pubblicato in: Journal of Crystal Growth, Numero 524, 2019, Pagina/e 125180, ISSN 0022-0248
Editore: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.125180

Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Autori: Daniele Lanzoni; Fabrizio Rovaris; Francesco Montalenti
Pubblicato in: Crystals, Numero 10, 2020, Pagina/e 661, ISSN 2073-4352
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst10080661

Composition determination for quaternary III-V semiconductors by aberration-corrected STEM

Autori: P. Kükelhan; Andreas Beyer; Saleh Firoozabadi; T. Hepp; Kerstin Volz
Pubblicato in: Ultramicroscopy, Numero 206, 2019, Pagina/e 112814, ISSN 0304-3991
Editore: Elsevier BV
DOI: 10.1016/j.ultramic.2019.112814

CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

Autori: Enrico Talamas Simola, Vivien Kiyek, Andrea Ballabio, Viktoria Schlykow, Jacopo Frigerio, Carlo Zucchetti, Andrea De Iacovo, Lorenzo Colace, Yuji Yamamoto, Giovanni Capellini, Detlev Grützmacher, Dan Buca, Giovanni Isella
Pubblicato in: ACS Photonics, Numero 8/7, 2021, Pagina/e 2166-2173, ISSN 2330-4022
Editore: American Chemical Society
DOI: 10.1021/acsphotonics.1c00617