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Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Objective

Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency and allow flexibility for finer grain of logic and memory. FeRAM has the highest endurance of all emerging NVMs. However, perovskite-based eFeRAM is incompatible with Si CMOS, does not easily scale and has manufacturability and cost issues.
We introduce new ferroelectric material Hf(Zr)O2 to make FeRAM competitive NVM candidate for IoT. HfO2 compatibility with Si processing will facilitate integration, improve manufacturability and allow better scaling. Different cell architectures based on capacitors or ferroelectric FETs will give unprecedented flexibility for “fine-grained” logic –in-memory (LiM) circuits, which allows data storage close to logic circuits, reduces energy cost of data transfer and allows smart gating for “normally-off” computing.
The project is built around four objectives: i) Optimization of Materials, ii) LiM design & architecture, iii) Integration of Hf(Zr)O2-based NVM arrays, iv) Memory test & validation & benchmarking. The work calls on the full spectrum of expertise from advanced materials synthesis and characterization, processing, design and integration and benchmarking to make substantial progress towards a truly disruptive energy efficient memory and logic technology.
A team of 8 partners, including a major European semiconductor company, the leader in the field of ferroelectric HfO2 and a large technology laboratory, originating from 5 EU states, will join forces to deliver experimental demonstrators creating the opportunity for the EU industry to establish a dominant position in IoT innovative components market and make an impact on the future roadmap for embedded systems and applications.

Field of science

  • /natural sciences/computer and information sciences/internet/internet of things
  • /engineering and technology/environmental engineering/waste management/energy efficiency

Call for proposal

H2020-ICT-2017-1
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Address
Rue Leblanc 25
75015 Paris 15
France
Activity type
Research Organisations
EU contribution
€ 1 462 493,95

Participants (7)

STMICROELECTRONICS CROLLES 2 SAS
France
EU contribution
€ 184 988,75
Address
Rue Jean Monnet 850
38920 Crolles
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
NAMLAB GGMBH
Germany
EU contribution
€ 718 437,50
Address
Nothnitzer Strasse 64
01187 Dresden
Activity type
Research Organisations
INSTITUTUL NATIONAL DE CERCETARE DEZVOLTARE PENTRU FIZICA MATERIALELOR
Romania
EU contribution
€ 310 125
Address
Atomistilor Street 105 Bis
77125 Magurele
Activity type
Research Organisations
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland
EU contribution
€ 367 000
Address
Batiment Ce 3316 Station 1
1015 Lausanne
Activity type
Higher or Secondary Education Establishments
ECOLE CENTRALE DE LYON
France
EU contribution
€ 357 437,50
Address
Avenue Guy De Collongue 36
69134 Ecully
Activity type
Higher or Secondary Education Establishments
"NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS"""
Greece
EU contribution
€ 369 587,50
Address
End Of Patriarchou Grigoriou E And 27 Neapoleos Street
15341 Agia Paraskevi
Activity type
Research Organisations
FORSCHUNGSZENTRUM JULICH GMBH
Germany
EU contribution
€ 219 500
Address
Wilhelm Johnen Strasse
52428 Julich
Activity type
Research Organisations