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Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Deliverables

Dissemination and Exploitation Plan (update 1)

Dissemination and Exploitation Plan (update 1)

Data Management Plan (Update)

Data Management Plan update at mid-term in light of project results

Data Management Plan

planning and execution of exploitation activities, including the use of the results during and after the project’s implementation

Dissemination and Exploitation Plan

Dissemination and Exploitation Plan to protect IP following mid-term assessment

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Publications

Transient Negative Capacitance of Silicon-doped HfO 2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Author(s): C. Gastaldi, A. Saeidi, M. Cavalieri, I. Stolichnov, P. Muralt, A. M. Ionescu
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 23.5.1-23.5.4
DOI: 10.1109/iedm19573.2019.8993523

Prospects for energy-efficient edge computing with integrated HfO<inf>2</inf>-based ferroelectric devices

Author(s): Ian OrConnor, Mayeul Cantan, Cedric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian Ionescu, Igor Stolichnov
Published in: 2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), 2018, Page(s) 180-183
DOI: 10.1109/VLSI-SoC.2018.8644809

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Author(s): Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Published in: Journal of Vacuum Science & Technology B, Issue 37/2, 2019, Page(s) 021203, ISSN 2166-2754
DOI: 10.1116/1.5060643

Adoption of 2T2C ferroelectric memory cells for logic operation

Author(s): Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck
Published in: 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2019, Page(s) 791-794
DOI: 10.1109/icecs46596.2019.8965155

Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

Author(s): T. Francois, C. Pellissier, S. Slesazeck, V. Havel, C. Richter, A. Makosiej, B. Giraud, E. T. Breyer, M. Materano, P. Chiquet, M. Bocquet, L. Grenouillet, E. Nowak, U. Schroeder, F. Gaillard, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 15.7.1-15.7.4
DOI: 10.1109/IEDM19573.2019.8993485

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

Author(s): Furqan Mehmood, Michael Hoffmann, Patrick D. Lomenzo, Claudia Richter, Monica Materano, Thomas Mikolajick, Uwe Schroeder
Published in: Advanced Materials Interfaces, Issue 6/21, 2019, Page(s) 1901180, ISSN 2196-7350
DOI: 10.1002/admi.201901180

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Author(s): W. Hamouda, C. Lubin, S. Ueda, Y. Yamashita, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, R. Negrea, N. Barrett
Published in: Applied Physics Letters, Issue 116/25, 2020, Page(s) 252903, ISSN 0003-6951
DOI: 10.1063/5.0012595

Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers

Author(s): Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Raluca Negrea, Lucian Pintilie, Bertrand Vilquin
Published in: APL Materials, Issue 7/8, 2019, Page(s) 081109, ISSN 2166-532X
DOI: 10.1063/1.5110894

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Author(s): Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Published in: ACS Applied Electronic Materials, Issue 1/9, 2019, Page(s) 1740-1745, ISSN 2637-6113
DOI: 10.1021/acsaelm.9b00367

Very large remanent polarization in ferroelectric Hf 1-x Zr x O 2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Author(s): C. Zacharaki, P. Tsipas, S. Chaitoglou, S. Fragkos, M. Axiotis, A. Lagoyiannis, R. Negrea, L. Pintilie, A. Dimoulas
Published in: Applied Physics Letters, Issue 114/11, 2019, Page(s) 112901, ISSN 0003-6951
DOI: 10.1063/1.5090036

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

Author(s): Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder
Published in: Advanced Materials Interfaces, 2019, Page(s) 1900042, ISSN 2196-7350
DOI: 10.1002/admi.201900042

Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium

Author(s): C. Zacharaki, P. Tsipas, S. Chaitoglou, E. K. Evangelou, C. M. Istrate, L. Pintilie, A. Dimoulas
Published in: Applied Physics Letters, Issue 116/18, 2020, Page(s) 182904, ISSN 0003-6951
DOI: 10.1063/5.0007111

Physical chemistry of the TiN/Hf 0.5 Zr 0.5 O 2 interface

Author(s): W. Hamouda, A. Pancotti, C. Lubin, L. Tortech, C. Richter, T. Mikolajick, U. Schroeder, N. Barrett
Published in: Journal of Applied Physics, Issue 127/6, 2020, Page(s) 064105, ISSN 0021-8979
DOI: 10.1063/1.5128502