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Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2

Deliverables

Dissemination and Exploitation Plan (update 1)

Dissemination and Exploitation Plan (update 1)

Data Management Plan (Update)

Data Management Plan update at mid-term in light of project results

Data Management Plan

planning and execution of exploitation activities, including the use of the results during and after the project’s implementation

Teaching module prepared utilising project results for use in regular graduate courses

implementation of the project results into relevant PhD or other graduate courses and summer schools. Specific modules on (i) growth/characterization of FE films; (ii) FE capacity fabrication and elaboration; (iii) architecture simulation for LiM application . Integratation of project results in lectures for students of engineering courses and PhD students (doctoral and summer schools) on the national and international level and creation of Massive Open Online courses (MOOC) in order to increase the dissemination of the education activities.

Benchmark of FeRAM with other eNVM technologies

Benchmark of FeRAM with respect to other emerging non-volatile technologies such as ReRAM, CBRAM, PCRAM and STT-MRAM, will be done . The FeRAM 1T-1C will thus be compared with the competing technologies integrated within the same technology node, and similar MAD (Memory Advanced Demonstrator) test vehicles from CEA, in terms of energy efficiency, speed, endurance, data retention

Long-term impact roadmap

Final public assessment of future impact of project work

Dissemination and Exploitation Plan (final update)

Update of Dissemination and Exploitation Plan for future use of project results

Dissemination and Exploitation Plan

Dissemination and Exploitation Plan to protect IP following mid-term assessment

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Publications

Transient Negative Capacitance of Silicon-doped HfO 2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Author(s): C. Gastaldi, A. Saeidi, M. Cavalieri, I. Stolichnov, P. Muralt, A. M. Ionescu
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 23.5.1-23.5.4
DOI: 10.1109/iedm19573.2019.8993523

Prospects for energy-efficient edge computing with integrated HfO<inf>2</inf>-based ferroelectric devices

Author(s): Ian OrConnor, Mayeul Cantan, Cedric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian Ionescu, Igor Stolichnov
Published in: 2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), 2018, Page(s) 180-183
DOI: 10.1109/VLSI-SoC.2018.8644809

Characterization of ferroelectric hafnium/zirconium oxide solid solutions deposited by reactive magnetron sputtering

Author(s): Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Published in: Journal of Vacuum Science & Technology B, Issue 37/2, 2019, Page(s) 021203, ISSN 2166-2754
DOI: 10.1116/1.5060643

Emerging Technologies: Challenges and Opportunities for Logic Synthesis

Author(s): Alberto Bosio, Mayeul Cantan, Cedric Marchand, Ian O'Connor, Petr Fiser, Arnaud Poittevin, Marcello Traiola
Published in: 2021 24th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2021, Page(s) 93-98
DOI: 10.1109/ddecs52668.2021.9417062

Adoption of 2T2C ferroelectric memory cells for logic operation

Author(s): Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck
Published in: 2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2019, Page(s) 791-794
DOI: 10.1109/icecs46596.2019.8965155

Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

Author(s): T. Francois, C. Pellissier, S. Slesazeck, V. Havel, C. Richter, A. Makosiej, B. Giraud, E. T. Breyer, M. Materano, P. Chiquet, M. Bocquet, L. Grenouillet, E. Nowak, U. Schroeder, F. Gaillard, J. Coignus, P. Blaise, C. Carabasse, N. Vaxelaire, T. Magis, F. Aussenac, V. Loup
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 15.7.1-15.7.4
DOI: 10.1109/IEDM19573.2019.8993485

Chemical Stability of IrO 2 Top Electrodes in Ferroelectric Hf 0.5 Zr 0.5 O 2 ‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Author(s): Thomas Szyjka, Lutz Baumgarten, Terence Mittmann, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Published in: physica status solidi (RRL) – Rapid Research Letters, Issue 15/5, 2021, Page(s) 2100027, ISSN 1862-6254
DOI: 10.1002/pssr.202100027

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO 2 films

Author(s): Lutz Baumgarten, Thomas Szyjka, Terence Mittmann, Monica Materano, Yury Matveyev, Christoph Schlueter, Thomas Mikolajick, Uwe Schroeder, Martina Müller
Published in: Applied Physics Letters, Issue 118/3, 2021, Page(s) 032903, ISSN 0003-6951
DOI: 10.1063/5.0035686

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

Author(s): Terence Mittmann, Thomas Szyjka, Hsain Alex, Marian Cosmin Istrate, Patrick D. Lomenzo, Lutz Baumgarten, Martina Müller, Jacob L. Jones, Lucian Pintilie, Thomas Mikolajick, Uwe Schroeder
Published in: physica status solidi (RRL) – Rapid Research Letters, Issue 15/5, 2021, Page(s) 2100012, ISSN 1862-6254
DOI: 10.1002/pssr.202100012

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

Author(s): Furqan Mehmood, Michael Hoffmann, Patrick D. Lomenzo, Claudia Richter, Monica Materano, Thomas Mikolajick, Uwe Schroeder
Published in: Advanced Materials Interfaces, Issue 6/21, 2019, Page(s) 1901180, ISSN 2196-7350
DOI: 10.1002/admi.201901180

Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films

Author(s): Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Published in: physica status solidi (a), Issue 217/22, 2020, Page(s) 2000281, ISSN 1862-6300
DOI: 10.1002/pssa.202000281

Surface relaxation and rumpling of Sn-doped β − Ga 2 O 3 ( 010 )

Author(s): A. Pancotti, T. C. Back, W. Hamouda, M. Lachheb, C. Lubin, P. Soukiassian, J. Boeckl, D. Dorsey, S. Mou, T. Asel, G. Geneste, N. Barrett
Published in: Physical Review B, Issue 102/24, 2020, ISSN 2469-9950
DOI: 10.1103/physrevb.102.245306

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Author(s): W. Hamouda, C. Lubin, S. Ueda, Y. Yamashita, O. Renault, F. Mehmood, T. Mikolajick, U. Schroeder, R. Negrea, N. Barrett
Published in: Applied Physics Letters, Issue 116/25, 2020, Page(s) 252903, ISSN 0003-6951
DOI: 10.1063/5.0012595

Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf 1−x Zr x O 2 thin film

Author(s): Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder
Published in: Applied Physics Letters, Issue 117/9, 2020, Page(s) 092902, ISSN 0003-6951
DOI: 10.1063/5.0021007

Dramatic impact of pressure and annealing temperature on the properties of sputtered ferroelectric HZO layers

Author(s): Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Raluca Negrea, Lucian Pintilie, Bertrand Vilquin
Published in: APL Materials, Issue 7/8, 2019, Page(s) 081109, ISSN 2166-532X
DOI: 10.1063/1.5110894

Reliability aspects of ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /Ge capacitors grown by plasma assisted atomic oxygen deposition

Author(s): C. Zacharaki, P. Tsipas, S. Chaitoglou, L. Bégon-Lours, M. Halter, A. Dimoulas
Published in: Applied Physics Letters, Issue 117/21, 2020, Page(s) 212905, ISSN 0003-6951
DOI: 10.1063/5.0029657

Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf 0.5 Zr 0.5 O 2 and Si:HfO 2 -based MFM capacitors

Author(s): T. Francois, L. Grenouillet, J. Coignus, N. Vaxelaire, C. Carabasse, F. Aussenac, S. Chevalliez, S. Slesazeck, C. Richter, P. Chiquet, M. Bocquet, U. Schroeder, T. Mikolajick, F. Gaillard, E. Nowak
Published in: Applied Physics Letters, Issue 118/6, 2021, Page(s) 062904, ISSN 0003-6951
DOI: 10.1063/5.0035650

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

Author(s): Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck
Published in: Applied Physics Letters, Issue 118/5, 2021, Page(s) 050501, ISSN 0003-6951
DOI: 10.1063/5.0035281

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Author(s): Jordan Bouaziz, Pedro Rojo Romeo, Nicolas Baboux, Bertrand Vilquin
Published in: ACS Applied Electronic Materials, Issue 1/9, 2019, Page(s) 1740-1745, ISSN 2637-6113
DOI: 10.1021/acsaelm.9b00367

Very large remanent polarization in ferroelectric Hf 1-x Zr x O 2 grown on Ge substrates by plasma assisted atomic oxygen deposition

Author(s): C. Zacharaki, P. Tsipas, S. Chaitoglou, S. Fragkos, M. Axiotis, A. Lagoyiannis, R. Negrea, L. Pintilie, A. Dimoulas
Published in: Applied Physics Letters, Issue 114/11, 2019, Page(s) 112901, ISSN 0003-6951
DOI: 10.1063/1.5090036

Origin of Ferroelectric Phase in Undoped HfO 2 Films Deposited by Sputtering

Author(s): Terence Mittmann, Monica Materano, Patrick D. Lomenzo, Min Hyuk Park, Igor Stolichnov, Matteo Cavalieri, Chuanzhen Zhou, Ching‐Chang Chung, Jacob L. Jones, Thomas Szyjka, Martina Müller, Alfred Kersch, Thomas Mikolajick, Uwe Schroeder
Published in: Advanced Materials Interfaces, 2019, Page(s) 1900042, ISSN 2196-7350
DOI: 10.1002/admi.201900042

Depletion induced depolarization field in Hf 1−x Zr x O 2 metal-ferroelectric-semiconductor capacitors on germanium

Author(s): C. Zacharaki, P. Tsipas, S. Chaitoglou, E. K. Evangelou, C. M. Istrate, L. Pintilie, A. Dimoulas
Published in: Applied Physics Letters, Issue 116/18, 2020, Page(s) 182904, ISSN 0003-6951
DOI: 10.1063/5.0007111

Imprint issue during retention tests for HfO 2 -based FRAM: An industrial challenge?

Author(s): J. Bouaziz, P. Rojo Romeo, N. Baboux, B. Vilquin
Published in: Applied Physics Letters, Issue 118/8, 2021, Page(s) 082901, ISSN 0003-6951
DOI: 10.1063/5.0035687

The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf 0.5 Zr 0.5 O 2 Ferroelectric

Author(s): Georgia Andra Boni, Cosmin M. Istrate, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Evangelos K. Evangelou, Athanasios Dimoulas, Ioana Pintilie, Lucian Pintilie
Published in: physica status solidi (a), Issue 218/4, 2021, Page(s) 2000500, ISSN 1862-6300
DOI: 10.1002/pssa.202000500

Physical chemistry of the TiN/Hf 0.5 Zr 0.5 O 2 interface

Author(s): W. Hamouda, A. Pancotti, C. Lubin, L. Tortech, C. Richter, T. Mikolajick, U. Schroeder, N. Barrett
Published in: Journal of Applied Physics, Issue 127/6, 2020, Page(s) 064105, ISSN 0021-8979
DOI: 10.1063/1.5128502

Intrinsic switching in Si-doped HfO 2 : A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

Author(s): Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Sadegh Kamaei, Teodor Rosca, Igor Stolichnov, Adrian Mihai Ionescu
Published in: Applied Physics Letters, Issue 118/19, 2021, Page(s) 192904, ISSN 0003-6951
DOI: 10.1063/5.0052129

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf 1−x Zr x O 2 -based structures

Author(s): I. Stolichnov, M. Cavalieri, C. Gastaldi, M. Hoffmann, U. Schroeder, T. Mikolajick, A. M. Ionescu
Published in: Applied Physics Letters, Issue 117/17, 2020, Page(s) 172902, ISSN 0003-6951
DOI: 10.1063/5.0021272