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Functionality of Oxide based devices under Electric-field: Towards Atomic-resolution Operando Nanoscopy

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Publications

Atomically interface engineered micrometer-thick SrMoO 3 oxide electrodes for thin-film Ba x Sr 1- x TiO 3 ferroelectric varactors tunable at low voltages

Author(s): P. Salg, D. Walk, L. Zeinar, A. Radetinac, L. Molina-Luna, A. Zintler, R. Jakoby, H. Maune, P. Komissinskiy, L. Alff
Published in: APL Materials, Issue 7/5, 2019, Page(s) 051107, ISSN 2166-532X
DOI: 10.1063/1.5094855

Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO 2 -based RRAM: Towards a Component Specific in situ TEM Investigation

Author(s): Alexander Zintler, Robert Eilhardt, Stefan Petzold, Nico Kaiser, Sharath Ulhas, Lambert Alff, Leopoldo Molina-Luna
Published in: Microscopy and Microanalysis, Issue 25/S2, 2019, Page(s) 1842-1843, ISSN 1431-9276
DOI: 10.1017/s1431927619009942

Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes

Author(s): S. Petzold, E. Miranda, S. U. Sharath, J. Muñoz-Gorriz, T. Vogel, E. Piros, N. Kaiser, R. Eilhardt, A. Zintler, L. Molina-Luna, J. Suñé, L. Alff
Published in: Journal of Applied Physics, Issue 125/23, 2019, Page(s) 234503, ISSN 0021-8979
DOI: 10.1063/1.5094864

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Author(s): Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff
Published in: Semiconductor Science and Technology, Issue 34/7, 2019, Page(s) 075008, ISSN 0268-1242
DOI: 10.1088/1361-6641/ab220f

Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)

Author(s): Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Published in: Advanced Electronic Materials, Issue 5/10, 2019, Page(s) 1970054, ISSN 2199-160X
DOI: 10.1002/aelm.201970054

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Author(s): Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Published in: Advanced Electronic Materials, Issue 5/10, 2019, Page(s) 1900484, ISSN 2199-160X
DOI: 10.1002/aelm.201900484

Enabling nanoscale flexoelectricity at extreme temperature by tuning cation diffusion

Author(s): Leopoldo Molina-Luna, Shuai Wang, Yevheniy Pivak, Alexander Zintler, Héctor H. Pérez-Garza, Ronald G. Spruit, Qiang Xu, Min Yi, Bai-Xiang Xu, Matias Acosta
Published in: Nature Communications, Issue 9/1, 2018, Page(s) 1-8, ISSN 2041-1723
DOI: 10.1038/s41467-018-06959-8

Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Author(s): Eszter Piros, Stefan Petzold, Alexander Zintler, Nico Kaiser, Tobias Vogel, Robert Eilhardt, Christian Wenger, Leopoldo Molina-Luna, Lambert Alff
Published in: Applied Physics Letters, Issue 117/1, 2020, Page(s) 013504, ISSN 0003-6951
DOI: 10.1063/5.0009645