Functionality of Oxide based devices under Electric-field: Towards Atomic-resolution Operando Nanoscopy

Project Information

FOXON

Grant agreement ID: 805359

DOI 10.3030/805359

Project closed

EC signature date 25 October 2018

Start date 1 November 2018

End date 31 October 2023

Funded under

• EXCELLENT SCIENCE - European Research Council (ERC)

Total cost € 1 758 600,00

EU contribution € 1 758 600,00

Coordinated by

TECHNISCHE UNIVERSITAT DARMSTADT
Germany

Publications

Peer reviewed articles (15)

Operando two-terminal devices inside a transmission electron microscope

Author(s): Oscar Recalde-Benitez, Tianshu Jiang, Robert Winkler, Yating Ruan, Alexander Zintler, Esmaeil Adabifiroozjaei, Alexey Arzumanov, William A. Hubbard, Tijn van Omme, Yevheniy Pivak, Hector H. Perez-Garza, B. C. Regan, Lambert Alff, Philipp Komissinskiy, Leopoldo Molina-Luna
Published in: COMMUNICATIONS ENGINEERING, 2023, ISSN 1431-9276
Publisher: Cambridge University Press
DOI: 10.1038/s44172-023-00133-9

Highly Accurate Analytic Modeling of Dispersive Field Distributions in MIM Capacitances With Electrodes Thinner Than Skin Depth

Author(s): Dominik Walk, Holger Maune, Daniel Kienemund, Patrick Salg, Lukas Zeinar, Aldin Radetinac, Leopoldo Molina-Luna, Philipp Komissinskiy, Lambert Alff, Rolf Jakoby
Published in: IEEE Transactions on Microwave Theory and Techniques, Issue 67/12, 2019, Page(s) 4665-4673, ISSN 0018-9480
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmtt.2019.2944622

Controlling the Formation of Conductive Pathways in Memristive Devices

Author(s): Robert Winkler; Alexander Zintler; Stefan Petzold; Eszter Piros; Nico Kaiser; Tobias Vogel; Déspina Nasiou; Keith P. McKenna; Leopoldo Molina‐Luna; Lambert Alff
Published in: Advanced Science, Issue 21, 2022, Page(s) 2201806, ISSN 1613-6829
Publisher: Wiley
DOI: 10.1002/advs.202201806

Atomically interface engineered micrometer-thick SrMoO 3 oxide electrodes for thin-film Ba x Sr 1- x TiO 3 ferroelectric varactors tunable at low voltages

Author(s): P. Salg, D. Walk, L. Zeinar, A. Radetinac, L. Molina-Luna, A. Zintler, R. Jakoby, H. Maune, P. Komissinskiy, L. Alff
Published in: APL Materials, Issue 7/5, 2019, Page(s) 051107, ISSN 2166-532X
Publisher: AIP
DOI: 10.1063/1.5094855

Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO 2 -based RRAM: Towards a Component Specific in situ TEM Investigation

Author(s): Alexander Zintler, Robert Eilhardt, Stefan Petzold, Nico Kaiser, Sharath Ulhas, Lambert Alff, Leopoldo Molina-Luna
Published in: Microscopy and Microanalysis, Issue 25/S2, 2019, Page(s) 1842-1843, ISSN 1431-9276
Publisher: Cambridge University Press
DOI: 10.1017/s1431927619009942

Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes

Author(s): S. Petzold, E. Miranda, S. U. Sharath, J. Muñoz-Gorriz, T. Vogel, E. Piros, N. Kaiser, R. Eilhardt, A. Zintler, L. Molina-Luna, J. Suñé, L. Alff
Published in: Journal of Applied Physics, Issue 125/23, 2019, Page(s) 234503, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5094864

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Author(s): Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff
Published in: Semiconductor Science and Technology, Issue 34/7, 2019, Page(s) 075008, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ab220f

Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)

Author(s): Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Published in: Advanced Electronic Materials, Issue 5/10, 2019, Page(s) 1970054, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.201970054

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Author(s): Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Published in: Advanced Electronic Materials, Issue 5/10, 2019, Page(s) 1900484, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.201900484

Enabling nanoscale flexoelectricity at extreme temperature by tuning cation diffusion

Author(s): Leopoldo Molina-Luna, Shuai Wang, Yevheniy Pivak, Alexander Zintler, Héctor H. Pérez-Garza, Ronald G. Spruit, Qiang Xu, Min Yi, Bai-Xiang Xu, Matias Acosta
Published in: Nature Communications, Issue 9/1, 2018, Page(s) 1-8, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-018-06959-8

Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Author(s): Eszter Piros, Stefan Petzold, Alexander Zintler, Nico Kaiser, Tobias Vogel, Robert Eilhardt, Christian Wenger, Leopoldo Molina-Luna, Lambert Alff
Published in: Applied Physics Letters, Issue 117/1, 2020, Page(s) 013504, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0009645

Role of Oxygen Defects in Conductive-Filament Formation in Y 2 O 3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

Author(s): Eszter Piros, Martin Lonsky, Stefan Petzold, Alexander Zintler, S.U. Sharath, Tobias Vogel, Nico Kaiser, Robert Eilhardt, Leopoldo Molina-Luna, Christian Wenger, Jens Müller, Lambert Alff
Published in: Physical Review Applied, Issue 14/3, 2020, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.14.034029

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Author(s): Stefan Petzold, Eszter Piros, Robert Eilhardt, Alexander Zintler, Tobias Vogel, Nico Kaiser, Aldin Radetinac, Philipp Komissinskiy, Eric Jalaguier, Emmanuel Nolot, Christelle Charpin‐Nicolle, Christian Wenger, Leopoldo Molina‐Luna, Enrique Miranda, Lambert Alff
Published in: Advanced Electronic Materials, Issue 6/11, 2020, Page(s) 2000439, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/aelm.202000439

Birth of a grain boundary: In situ TEM Observation of the Microstructure Evolution in HfO 2 Based Memristors

Author(s): Robert Eilhardt, Alexander Zintler, Oscar Recalde, Déspina Nasiou, Stefan Petzold, Lambert Alff, Leopoldo Molina-Luna
Published in: Microscopy and Microanalysis, Issue 27/S1, 2021, Page(s) 1238-1239, ISSN 1431-9276
Publisher: Cambridge University Press
DOI: 10.1017/s1431927621004645

Multi-Stimuli Operando Transmission ElectronMicroscopy for Two-Terminal Oxide-Based Devices

Author(s): Oscar Recalde-Benitez, Yevheniy Pivak, Robert Winkler, Tianshu Jiang, Esmaeil Adabifiroozjaei, H Hugo Perez-Garza, Leopoldo Molina-Luna
Published in: Microscopy and Microanalysis, 2024, ISSN 1431-9276
Publisher: Cambridge University Press
DOI: 10.1093/mam/ozae023

Conference proceedings (2)

Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM

Author(s): Oscar Recalde, Tianshu Jiang, Robert Eilhardt, Alexander Zintler, Yating Ruan, Alexey Arzumanov, Tijn van Omme, Gin Pivak, Hector H. Perez-Garza, Philipp Komissinskiy, Lambert Alff, Leopoldo Molina-Luna
Published in: Microsc. Microanal., 2022
Publisher: Oxford Publishing
DOI: 10.1017/s1431927622003671

Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation

Author(s): Alexander Zintler; Robert Eilhardt; Stefan Petzold; Nico Kaiser; Sharath Ulhas; Lambert Alff; Leopoldo Molina-Luna
Published in: Microscopy and Microanalysis, Issue 5, 2019
Publisher: Microscopy Society of America
DOI: 10.1017/s1431927619009942