Functionality of Oxide based devices under Electric-field: Towards Atomic-resolution Operando Nanoscopy

Informazioni relative al progetto

FOXON

ID dell’accordo di sovvenzione: 805359

DOI 10.3030/805359

Progetto chiuso

Data della firma CE 25 Ottobre 2018

Data di avvio 1 Novembre 2018

Data di completamento 31 Ottobre 2023

Finanziato da

• EXCELLENT SCIENCE - European Research Council (ERC)

Costo totale € 1 758 600,00

Contributo UE € 1 758 600,00

Coordinato da

TECHNISCHE UNIVERSITAT DARMSTADT
Germany

Pubblicazioni

Peer reviewed articles (15)

Operando two-terminal devices inside a transmission electron microscope

Autori: Oscar Recalde-Benitez, Tianshu Jiang, Robert Winkler, Yating Ruan, Alexander Zintler, Esmaeil Adabifiroozjaei, Alexey Arzumanov, William A. Hubbard, Tijn van Omme, Yevheniy Pivak, Hector H. Perez-Garza, B. C. Regan, Lambert Alff, Philipp Komissinskiy, Leopoldo Molina-Luna
Pubblicato in: COMMUNICATIONS ENGINEERING, 2023, ISSN 1431-9276
Editore: Cambridge University Press
DOI: 10.1038/s44172-023-00133-9

Highly Accurate Analytic Modeling of Dispersive Field Distributions in MIM Capacitances With Electrodes Thinner Than Skin Depth

Autori: Dominik Walk, Holger Maune, Daniel Kienemund, Patrick Salg, Lukas Zeinar, Aldin Radetinac, Leopoldo Molina-Luna, Philipp Komissinskiy, Lambert Alff, Rolf Jakoby
Pubblicato in: IEEE Transactions on Microwave Theory and Techniques, Numero 67/12, 2019, Pagina/e 4665-4673, ISSN 0018-9480
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tmtt.2019.2944622

Controlling the Formation of Conductive Pathways in Memristive Devices

Autori: Robert Winkler; Alexander Zintler; Stefan Petzold; Eszter Piros; Nico Kaiser; Tobias Vogel; Déspina Nasiou; Keith P. McKenna; Leopoldo Molina‐Luna; Lambert Alff
Pubblicato in: Advanced Science, Numero 21, 2022, Pagina/e 2201806, ISSN 1613-6829
Editore: Wiley
DOI: 10.1002/advs.202201806

Atomically interface engineered micrometer-thick SrMoO 3 oxide electrodes for thin-film Ba x Sr 1- x TiO 3 ferroelectric varactors tunable at low voltages

Autori: P. Salg, D. Walk, L. Zeinar, A. Radetinac, L. Molina-Luna, A. Zintler, R. Jakoby, H. Maune, P. Komissinskiy, L. Alff
Pubblicato in: APL Materials, Numero 7/5, 2019, Pagina/e 051107, ISSN 2166-532X
Editore: AIP
DOI: 10.1063/1.5094855

Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO 2 -based RRAM: Towards a Component Specific in situ TEM Investigation

Autori: Alexander Zintler, Robert Eilhardt, Stefan Petzold, Nico Kaiser, Sharath Ulhas, Lambert Alff, Leopoldo Molina-Luna
Pubblicato in: Microscopy and Microanalysis, Numero 25/S2, 2019, Pagina/e 1842-1843, ISSN 1431-9276
Editore: Cambridge University Press
DOI: 10.1017/s1431927619009942

Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes

Autori: S. Petzold, E. Miranda, S. U. Sharath, J. Muñoz-Gorriz, T. Vogel, E. Piros, N. Kaiser, R. Eilhardt, A. Zintler, L. Molina-Luna, J. Suñé, L. Alff
Pubblicato in: Journal of Applied Physics, Numero 125/23, 2019, Pagina/e 234503, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.5094864

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Autori: Stefan Petzold, Eszter Piros, S U Sharath, Alexander Zintler, Erwin Hildebrandt, Leopoldo Molina-Luna, Christian Wenger, Lambert Alff
Pubblicato in: Semiconductor Science and Technology, Numero 34/7, 2019, Pagina/e 075008, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ab220f

Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)

Autori: Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Pubblicato in: Advanced Electronic Materials, Numero 5/10, 2019, Pagina/e 1970054, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.201970054

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Autori: Stefan Petzold, Alexander Zintler, Robert Eilhardt, Eszter Piros, Nico Kaiser, Sankaramangalam Ulhas Sharath, Tobias Vogel, Márton Major, Keith Patrick McKenna, Leopoldo Molina‐Luna, Lambert Alff
Pubblicato in: Advanced Electronic Materials, Numero 5/10, 2019, Pagina/e 1900484, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.201900484

Enabling nanoscale flexoelectricity at extreme temperature by tuning cation diffusion

Autori: Leopoldo Molina-Luna, Shuai Wang, Yevheniy Pivak, Alexander Zintler, Héctor H. Pérez-Garza, Ronald G. Spruit, Qiang Xu, Min Yi, Bai-Xiang Xu, Matias Acosta
Pubblicato in: Nature Communications, Numero 9/1, 2018, Pagina/e 1-8, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-018-06959-8

Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Autori: Eszter Piros, Stefan Petzold, Alexander Zintler, Nico Kaiser, Tobias Vogel, Robert Eilhardt, Christian Wenger, Leopoldo Molina-Luna, Lambert Alff
Pubblicato in: Applied Physics Letters, Numero 117/1, 2020, Pagina/e 013504, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0009645

Role of Oxygen Defects in Conductive-Filament Formation in Y 2 O 3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy

Autori: Eszter Piros, Martin Lonsky, Stefan Petzold, Alexander Zintler, S.U. Sharath, Tobias Vogel, Nico Kaiser, Robert Eilhardt, Leopoldo Molina-Luna, Christian Wenger, Jens Müller, Lambert Alff
Pubblicato in: Physical Review Applied, Numero 14/3, 2020, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.14.034029

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Autori: Stefan Petzold, Eszter Piros, Robert Eilhardt, Alexander Zintler, Tobias Vogel, Nico Kaiser, Aldin Radetinac, Philipp Komissinskiy, Eric Jalaguier, Emmanuel Nolot, Christelle Charpin‐Nicolle, Christian Wenger, Leopoldo Molina‐Luna, Enrique Miranda, Lambert Alff
Pubblicato in: Advanced Electronic Materials, Numero 6/11, 2020, Pagina/e 2000439, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/aelm.202000439

Birth of a grain boundary: In situ TEM Observation of the Microstructure Evolution in HfO 2 Based Memristors

Autori: Robert Eilhardt, Alexander Zintler, Oscar Recalde, Déspina Nasiou, Stefan Petzold, Lambert Alff, Leopoldo Molina-Luna
Pubblicato in: Microscopy and Microanalysis, Numero 27/S1, 2021, Pagina/e 1238-1239, ISSN 1431-9276
Editore: Cambridge University Press
DOI: 10.1017/s1431927621004645

Multi-Stimuli Operando Transmission ElectronMicroscopy for Two-Terminal Oxide-Based Devices

Autori: Oscar Recalde-Benitez, Yevheniy Pivak, Robert Winkler, Tianshu Jiang, Esmaeil Adabifiroozjaei, H Hugo Perez-Garza, Leopoldo Molina-Luna
Pubblicato in: Microscopy and Microanalysis, 2024, ISSN 1431-9276
Editore: Cambridge University Press
DOI: 10.1093/mam/ozae023

Conference proceedings (2)

Effect of Induced Stimuli on the Leakage Current of Operative Oxide-based Devices inside a TEM

Autori: Oscar Recalde, Tianshu Jiang, Robert Eilhardt, Alexander Zintler, Yating Ruan, Alexey Arzumanov, Tijn van Omme, Gin Pivak, Hector H. Perez-Garza, Philipp Komissinskiy, Lambert Alff, Leopoldo Molina-Luna
Pubblicato in: Microsc. Microanal., 2022
Editore: Oxford Publishing
DOI: 10.1017/s1431927622003671

Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation

Autori: Alexander Zintler; Robert Eilhardt; Stefan Petzold; Nico Kaiser; Sharath Ulhas; Lambert Alff; Leopoldo Molina-Luna
Pubblicato in: Microscopy and Microanalysis, Numero 5, 2019
Editore: Microscopy Society of America
DOI: 10.1017/s1431927619009942