Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap

Informations projet

UltimateGaN

N° de convention de subvention: 826392

DOI 10.3030/826392

Projet clôturé

Date de signature de la CE 10 Mai 2019

Date de début 1 Mai 2019

Date de fin 31 Octobre 2022

Financé au titre de

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coût total € 48 381 749,02

Contribution de l’UE € 14 093 529,07

Coordonné par

INFINEON TECHNOLOGIES AUSTRIA AG
Austria

Livrables

Documents, reports (3)

Integration of tri-anode and Tri-gate structures

Report on fabrication and optimization of trianode structures integrated with trigate HEMTs for reverse conduction D2431

Growth of p-GaN layers over tri-gate

Report on development of growth techniques of pGaN over trigate structures for normally off behaviour D2411

Cathodoluminescence monitoring of tri-gate strain relaxation

Report on optmization of trigate structures based on high resolution cathodoluminescence measurements of strain relaxation D2421

Websites, patent fillings, videos etc. (1)

Project website

The UltimateGaN website goes public D7212

Other (1)

Press Release: Launching the UltimateGaN project

A Press Release about the launch of UltimateGaN is published D7211

Publications

Conference proceedings (49)

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Auteurs: Fahle, Dirk; Zhao, Ming; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; Magnani, Alessandro; Amirifar, Nooshin; Bakeroot, Benoit; You, Shuzhen; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Marcon, Denis; Groeseneken, Guido; Decoutere, Stefaan; Hahn, Herwig; Heuken,
Publié dans: DGKK Workshop Epitaxy of III-V Semiconductors, 2022
Éditeur: DGKK

Air-filled cavity-backed 28 GHz Antenna array implemented by 2.5D PCB process and Network Analysis

Auteurs: H. Takahashi; S. W. Sattler; E. Schlaffer; B. Reitmaier; H. Sarbandifarahani; H. Paulitsch; W. Bösch
Publié dans: 51st European Microwave Conference (EuMC), Numéro 04-06 April 2022, 2022, ISBN 978-1-6654-4721-8
Éditeur: IEEE
DOI: 10.23919/eumc50147.2022.9784315

Charge Trapping in GaN Power Transistors: Challenges and Perspectives

Auteurs: Meneghini, Matteo; Modolo, Nicola; Nardo, Arianna; De Santi, Carlo; Minetto, Andrea; Sayadi, Luca; Koller, Christian; Sicre, Sebastien; Prechtl, Gerhard; Meneghesso, Gaudenzio; Zanoni, Enrico
Publié dans: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Numéro 5-8 Dec. 2021, 2021
Éditeur: IEEE
DOI: 10.1109/bcicts50416.2021.9682455

Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

Auteurs: J. Drobny, J. Marek, A. Kosa, K. Geens, M. Borga, H. Liang, S. You, S. Decoutere, L. Stuchlikova
Publié dans: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 123-126, ISBN 978-1-7281-9776-0
Éditeur: IEEE
DOI: 10.1109/asdam50306.2020.9393836

An Ultra-Low Weight Bidirectional Back-End PFC Topology

Auteurs: Alex Sanchez; Asier Garcia-Bediaga; Itziar Alzuguren; Iñigo Zubitur; Alejandro Rujas
Publié dans: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), Numéro 10-14.October 2021, 2021, ISBN 978-1-7281-5135-9
Éditeur: IEEE
DOI: 10.1109/ecce47101.2021.9595169

DLTS study of electrically active defects in semi-vertical GaN-on-Si FETs.

Auteurs: DROBNÝ, Jakub - MAREK, Juraj - KÓSA, Arpád - VADOVSKÝ, Jakub - GEENS, Karen - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ
Publié dans: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020
Éditeur: Comenius University Bratislava

Dislocation type determination by cathodoluminescence

Auteurs: Marc Fouchier, Christian Monachon, Herwig Hahn, Dirk Fahle and Michael Heuken
Publié dans: GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

A Symmetric Wideband Doherty Power Amplifier for the n78 - 5G NR Frequency Band

Auteurs: Ioannis Peppas, Hiroaki Takahashi, Helmut Paulitsch, Wolfgang Bosch
Publié dans: 18th International Conference on Wireless and Mobile Computing, Networking and Communications (WiMob), Numéro 10-12 October 2022, 2022
Éditeur: IEEE

Multiphysics Reduced Order Modelling of a Packaged Laser Diode

Auteurs: Giovanna Grosso, Thomas Moldaschl, Rene Fuger, Alfred Binder
Publié dans: 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Numéro 23-23 September 2021, 2021
Éditeur: IEEE
DOI: 10.1109/therminic52472.2021.9626505

Active Filter Circuit in the HF AC-link of a Bidirectional Wireless Battery Charger for EV

Auteurs: Garcia-Bediaga, A., Avila, A., Alzuguren, I., Rujas, A., Vasic, M.
Publié dans: IEEE Energy Conversion Congress & Expo (ECCE) 2022, Numéro 9-13 October 2022, 2022
Éditeur: IEEE

Ultra-Compact Single-Stage Bidirectional Wireless Battery Charger for Electric Vehicles

Auteurs: Garcia-Bediaga, Asier;Avila, Ander;Zubitur, Iñigo;Sanchez, Alex;Rujas, Alejandro
Publié dans: PCIM Europe Conference Proceedings, Numéro 10-12 May 2022, 2022
Éditeur: VDE Verlag
DOI: 10.30420/565822019

Performance evaluation of an IPT system based on GaN devices operating in capacitive, resistive or inductive regions

Auteurs: Avila, A., Garcia-Bediaga, A., Gonzalez-Hernando, F., Alzuguren, I., Rujas, A.
Publié dans: IEEE Vehicular Power and Propulsion 2021, Numéro 25-28 Oct 2021, 2021
Éditeur: IEEE
DOI: 10.1109/vppc53923.2021.9699190

Trapping and Reliability in GaN Transistors:Role of Buffer and Hot Electrons

Auteurs: M. Meneghini, N. Modolo, A. Nardo, C. De Santi, M. Buffolo, A. Minetto, L. Sayadi, S. Sicre, G. Prechtl, C. Ostermaier, C. Koller, F. Rampazzo, G. Meneghesso, and E. Zanoni
Publié dans: Proceedings of the GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Defect Distribution Study of p+-n GaN diode for High Power Applications

Auteurs: Matej Matus, Juraj Marek, Karen Geens, Matteo Borga, Hu Liang, Stefaan Decoutere, Herwig Hahn, Michael Heuken, Lubica Stuchlikova
Publié dans: WOCSDICE, 2022
Éditeur: Universidade de Aveiro

Embedding of High Power RF Transistor Dies in PCB Laminate

Auteurs: Ioannis Peppas, Hiroaki Takahashi, Jim Yip, Erich Schlaffer, Helmut Paulitsch, Wolfgang Bosch
Publié dans: 52nd European Microwave Conference (EuMC), Numéro 27-29 September 2022, 2022
Éditeur: IEEE

Low Profile Bidirectional Wireless Battery Charger for PHEV/EV Vehicles

Auteurs: Itziar Alzuguren, Asier Garcia Bediaga , Ander Avila, Alejandro Rujas
Publié dans: GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Auteurs: Minghua Zhu, Jun Ma, Elison Matioli
Publié dans: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Page(s) 345-348, ISBN 978-1-7281-4836-6
Éditeur: IEEE
DOI: 10.1109/ispsd46842.2020.9170183

A reconfigurable dual-mode Filter in Embedded Suspended Stripline Substrate Technology (ESSS)

Auteurs: Ahmad Bader Alothman Alterkawi; Sebastian W. Sattler; Reinhard Teschl; Wolfgang Bösch
Publié dans: Microwave Filter Workshop (IMFW), Numéro 17-19 Nov. 2021, 2021, ISBN 978-1-7281-6804-3
Éditeur: IEEE
DOI: 10.1109/imfw49589.2021

Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices

Auteurs: Tailang Xie, Martin Krupinski, Sven Jachalke, Claudia Silva, Andreas Groser, Jan Gartner, Rico Hentschel, Thomas Mikolajick, Andre Wachowiak
Publié dans: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 135-138, ISBN 978-1-7281-9776-0
Éditeur: IEEE
DOI: 10.1109/asdam50306.2020.9393849

Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

Auteurs: B. Bakeroot, K. Geens, M. Borga, H. Liang, S. You, S. Decoutere
Publié dans: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 1-4, ISBN 978-1-7281-9776-0
Éditeur: IEEE
DOI: 10.1109/asdam50306.2020.9393871

Dislocation type discrimination by cathodoluminescence

Auteurs: Marc Fouchier
Publié dans: Proceedings of the GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

A Novel Frequency Selective Antenna for mm-Wave Phased Arrays

Auteurs: Hossein Sarbandi Farahani, Behrooz Rezaee, Helmut Paulitsch, Wolfgang Bosch
Publié dans: International Workshop on Antenna Technology (iWAT), Numéro 16-18 May 2022, 2022, ISBN 978-1-6654-9450-2
Éditeur: IEEE
DOI: 10.1109/iwat54881.2022.9811017

Design and Characterization of p-body Layer of Vertical GaN Devices on Engineered Substrates

Auteurs: M. Borga , W. Filho Gonçalez , K. Geens , B. Bakeroot , H. Liang , S. Decoutere
Publié dans: International Workshop on Nitride Semiconductors 2022, Numéro 9-14 Oct 2022, 2022
Éditeur: IWN

Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Auteurs: K. Geens, H. Herwig, H. Liang, M. Borga, D. Cingu, S. You, M. Marx, R. Oligschlaeger, D. Fahle, M. Heuken, V. Odnoblyudov, O. Aktas, C. Basceri, S. Decoutere
Publié dans: 2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), Numéro 24.5.2021, 2021
Éditeur: CS Mantech

Degradation of 600V GaN HEMT with p-GaN gate under repetitive short circuit stress

Auteurs: KOZÁRIK, Jozef - MAREK, Juraj - MINÁRIK, Michal - CHVÁLA, Aleš - GAŠPAREK, Krisztián - JAGELKA, Martin - DONOVAL, Martin
Publié dans: 9th International conference on advances in electronic and photonic technologies, 2021, ISBN 978-80-554-1806-3
Éditeur: EDIS

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

Auteurs: D. Favero; C. De Santi; K. Mukherjee; K. Geens; M. Borga; B. Bakeroot; S. You; S. Decoutere; G. Meneghesso; E. Zanoni; M. Meneghini
Publié dans: 2022 IEEE International Reliability Physics Symposium, IRPS 2022, 2022
Éditeur: IEEE
DOI: 10.1109/irps48227.2022.9764600

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Auteurs: Luca Nela; Catherine Erine; Jun Ma; Halil Kerim Yildirim; Remco Van Erp; Peng Xiang; Kai Cheng; Elison Matioli
Publié dans: 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Numéro 30 May-3 June 2021, 2021, Page(s) 143-146, ISBN 978-4-88686-422-2
Éditeur: IEEE
DOI: 10.23919/ispsd50666.2021.9452238

Cathodoluminescence spectroscopy applied to nanoscale strain variation measurement

Auteurs: Christian Monachon, Luca Nela, Catherine Erine and Elison Matioli
Publié dans: Proceedings of the GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

AlON gate dielectric and gate trench cleaning for improved reliability of vertical GaN MOSFETs

Auteurs: Walter Gonçalez Filho, Matteo Borga , Karen Geens , Deepthi Cingu , Urmimala Chatterjee , Shuzhen You , Benoit Bakeroot , Stefaan Decoutere , Werner Knaepen ; Panagiota Arnou ; Pia Homm
Publié dans: CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems, Numéro 15-17 March 2022, 2022, ISBN 978-3-8007-5757-2
Éditeur: VDE

Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices.

Auteurs: MAREK, Juraj - MIKOLÁŠEK, Miroslav - DROBNÝ, Jakub - KOZÁRIK, Jozef - CHVÁLA, Aleš - GEENS, K. - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ, Ľubica
Publié dans: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020
Éditeur: Comenius University Bratislava

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Auteurs: Jun Ma, Catherine Erine, Minghua Zhu, Nela Luca, Peng Xiang, Kai Cheng, Elison Matioli
Publié dans: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 4.1.1-4.1.4, ISBN 978-1-7281-4032-2
Éditeur: IEEE
DOI: 10.1109/iedm19573.2019.8993536

High-performance normally-off tri-gate GaN power MOSFETs

Auteurs: Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli
Publié dans: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, Page(s) 71-74, ISBN 978-1-7281-0581-9
Éditeur: IEEE
DOI: 10.1109/ispsd.2019.8757690

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Auteurs: M. Heuken, D. Fahle, M. Zhao, K. Geens, X. Li, D. Wellekens, A. Magnani, N. Amirifar, B. Bakeroot, S. You, V. Odnoblyudov, O. Aktas, C. Basceri, D. Marcon, G. Groeseneken, S. Decoutere, H. Hahn
Publié dans: DGKK wokshop on epitaxy of III-V semiconductor compounds, 2019
Éditeur: TU Dresden

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Auteurs: Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere
Publié dans: Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS), 2020
Éditeur: IEEE

Investigation of semi-vertical GaN FET structures using EBIC method

Auteurs: Šatka, A. - Priesol, J. – You, S. – Geens, K. – Decoutere, S.
Publié dans: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020, Page(s) 92-93
Éditeur: Comenius University Bratislava

Propelling the Power Electronics Revolution: 200 mm Diameter, 100 V to 1800 V and Beyond GaN-on-QST® High Volume Device Manufacturing Platform

Auteurs: C. Basceri, V. Odnoblyudov, O. Aktas, W. Wohlmuth, K. Geens, A. Vohra, B. Bakeroot, H. Hahn, D. Fahle, M. Heuken, S. Decoutere
Publié dans: 2022 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), Numéro 9-12 May 2022, 2022
Éditeur: CS MANTECH

Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices

Auteurs: Patrick Diehle, Susanne Hübner, Carlo De Santi, Kalparupa Mukherjee, Enrico Zanoni, Matteo Meneghini, Karen Geens, Shuzhen You, Stefaan Decoutere, Frank Altmann
Publié dans: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2021, ISSN 78-1-7281-9776-0
Éditeur: IEEE
DOI: 10.1109/asdam50306.2020.9393835

Challenges in Vertical GaN Device Development

Auteurs: K. Geens, M. Borga, H. Liang, U. Chatterjee, D. Cingu, W. Gonçalez Filho, B. Bakeroot, H. Hahn, M. Marx, R. Oligschlaeger, D. Fahle, M. Heuken, V. Odnoblyudov, O. Aktas, C. Basceri and S. Decoutere
Publié dans: GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Recent advancements in vertical GaN Device Development on Engineered substrates

Auteurs: K. Geens, M. Borga, H. Liang, U. Chatterjee, D. Cingu, W. Gonçalez Filho, B. Bakeroot, H. Hahn, M. Marx, R. Oligschlaeger, D. Fahle, M. Heuken, V. Odnoblyudov, O. Aktas, C. Basceri and S. Decoutere
Publié dans: GaN Marathon 2022, Numéro 19-22 June 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Determination of Quasi-Coaxial Via Capacitance using Conformal Mapping Technique

Auteurs: Hiroaki Takahashi;Ioannis Peppas;Erich Schlaffer;Helmut Paulitsch;Wolfgang Bösch
Publié dans: 14th German Microwave Conference (GeMiC), 2022, ISSN 2167-8022
Éditeur: IEEE

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

Auteurs: E. Fabris; M. Borga; N. Posthuma; M. Zhao; B. De Jaeger; S. You; S. Decoutere; M. Meneghini; G. Meneghesso; E. Zanoni
Publié dans: IEEE International Reliability Physics Symposium (IRPS), Numéro 21-25 March 2021, 2021, ISBN 978-1-7281-6893-7
Éditeur: IEEE
DOI: 10.1109/irps46558.2021.9405097

Degradation of 600V GaN HEMTs under repetitive short circuit conditions.

Auteurs: KOZÁRIK, Jozef - MAREK, Juraj - MINÁRIK, Michal - CHVÁLA, Aleš - DEBNÁR, Tomáš - DONOVAL, Martin - STUCHLÍKOVÁ, Ľubica.
Publié dans: ISPS '21 : 15th International Seminar on Power Semiconductors, Numéro August 26-27, 2021, 2021, Page(s) 76-81, ISBN 978-80-01-06874-8
Éditeur: Czech Technical University in Prague

A new approach for high resolution TEM analysis of electrically active defects in pGaN HEMT devices

Auteurs: Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, and Clemens Ostermaier
Publié dans: GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Understanding the mechanism of Ga incorporation in InAlN and InGaN grown by MOCVD

Auteurs: D. Meyer, F. Sandbaumhüter, C. Mauder, O. Rockenfeller, A. Debald, A.R. Boyd, and M. Heuken
Publié dans: GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Investigation of EBIC line profiles at the p-n junction by numerical simulations using Monte Carlo method.

Auteurs: Priesol, J. – Šatka, A. – Geens, K
Publié dans: Extended abstract book of 7th conference Progress in Applied Surface, Inteface and Thin Film Science – Solar Renewable Energy News VII (SURFINT-SREN VII), 2021, Page(s) 49-50, ISBN 978-80-223-5296-3
Éditeur: Comenius University

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Auteurs: Taifang Wang, Mohammad Samizadeh Nikoo, Luca Nela, Elison Matioli
Publié dans: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, Page(s) 135-138, ISBN 978-4-88686-422-2
Éditeur: IEEE
DOI: 10.23919/ispsd50666.2021.9452252

Degradation of 600V GaN HEMTs under repetitive short circuit conditions

Auteurs: KOZÁRIK, Jozef - MAREK, Juraj - MINÁRIK, Michal - CHVÁLA, Aleš - DEBNÁR, Tomáš - DONOVAL, Martin - STUCHLÍKOVÁ, Ľubica
Publié dans: ISPS '21 : 15th International Seminar on Power Semiconductors, 2021, ISBN 978-80-01-06874-8
Éditeur: Czech Technical University in Prague

Study of semi-vertical GaN-on-Si FETs by DLTFS with optical excitation

Auteurs: DROBNÝ, Jakub - MATUŠ, Matej - MAREK, Juraj - CHVÁLA, Aleš - GEENS, Karen - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ, Ľubica
Publié dans: ADEPT 2021 : 9th International conference on advances in electronic and photonic technologies, Numéro September 20-23.2021., 2021, Page(s) 183-186, ISBN 978-80-554-1806-3
Éditeur: EDIS

Epitaxial growth of vertical GaN device layer stacks on 200 mm engineered substrates

Auteurs: Herwig Hahn, Matthias Marx, Robert Oligschlaeger, Dirk Fahle, Hu Liang, Karen Geens, Matteo Borga, Stefaan Decoutere, Vlad Odnoblyudov, Ozgur Aktas, Cem Basceri and Michael Heuken
Publié dans: GaN Marathon 2022, 2022, ISBN 9788854955271
Éditeur: C.L.E.U.P.

Peer reviewed articles (26)

Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Auteurs: A Nardo; C de Santi; C Carraro; F Sgarbossa; M Buffolo; P Diehle; S Gierth; F Altmann; H Hahn; D Fahle; M Heuken; M Fouchier; A Gasparotto; E Napolitani; G Meneghesso; E Zanoni; M Meneghini
Publié dans: Journal of Physics D: Applied Physics, Numéro 2, 2022, ISSN 0022-3727
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ac4f0c

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Auteurs: A. Nardo, C. De Santi, C. Koller, C. Ostermaier, I. Daumiller, G. Meneghesso, E. Zanoni, M. Meneghini
Publié dans: Microelectronics Reliability, Numéro 126, 2021, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2021.114255

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Auteurs: Minghua Zhu, Catherine Erine, Jun Ma, Mohammad Samizadeh Nikoo, Luca Nela, Pirouz Sohi, Elison Matioli
Publié dans: IEEE Electron Device Letters, Numéro 42/1, 2021, Page(s) 82-85, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.3037026

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Auteurs: K. Mukherjee, C. De Santi, S. You, K. Geens, M. Borga, S. Decoutere, B. Bakeroot, P. Diehle, F. Altmann, G. Meneghesso, E. Zanoni, and M. Meneghini
Publié dans: Applied Physics Letters, Numéro 120, 143501 (2022), 2022, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0087245

Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations

Auteurs: Su-Hyun Yoo, Liverios Lymperakis, Jörg Neugebauer
Publié dans: Physical Review Materials, Numéro 5/4, 2021, Page(s) 9, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.5.044605

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Auteurs: Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli
Publié dans: IEEE Electron Device Letters, Numéro vol. 43, no. 9, pp. 1523-1526, Sept. 2022, 2022, Page(s) 1523 - 1526, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2022.3189635

GaN-based power devices: Physics, reliability, and perspectives

Auteurs: Matteo Meneghini, Carlo De Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, Farid Medjdoub, Gaudenzio Meneghesso, Giovanni Verzellesi, Enrico Zanoni, Elison Matioli
Publié dans: Journal of Applied Physics, Numéro 130, 2021, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/5.0061354

Comparison of the parasitic Impedances from the Drain-Source Path of Power Transistor Packages at up to 2 GHz

Auteurs: Thomas Moldaschl, Stefan Woetzel, Riccardo Latella, Maurizio Galvano, Alfred Binder
Publié dans: Engineering Reports, Numéro 16 December 2021, 2021, ISSN 2577-8196
Éditeur: John Wiley & Sons, Ltd
DOI: 10.1002/eng2.12489

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si (111) interface in GaN-based HEMT buffer stacks

Auteurs: C Mauder, H Hahn, M Marx, Z Gao, R Oligschlaeger, T Zweipfennig, A Noculak, R Negra, H Kalisch, A Vescan, M Heuken
Publié dans: Semiconductor Science and Technology, Numéro 36 (7), 075008, 2021, ISSN 0268-1242
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ac02da

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Auteurs: C. Koller, L. Lymperakis, D. Pogany, G. Pobegen, C. Ostermaier
Publié dans: Journal of Applied Physics, Numéro 185702 (2021), 2021, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/5.0060912

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Auteurs: Luca Nela, Halil Kerim Yildirim, Catherine Erine, Remco Van Erp, Peng Xiang, Kai Cheng, Elison Matioli
Publié dans: IEEE Electron Device Letters, Numéro 42/1, 2021, Page(s) 86-89, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.3038808

Stable enhancement-mode operation in GaN transistor based on LiNiO junction tri-gate

Auteurs: Taifang Wang, Yuan Zong, Luca Nela, Elison Matioli
Publié dans: Applied Physics Letters, Numéro 121, 053501 (2022), 2022, Page(s) 53501, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0098052

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Auteurs: Kalparupa Mukherjee; Carlo De Santi; Matteo Buffolo; Matteo Borga; Shuzhen You; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
Publié dans: ISSN: 2072-666X, Numéro 4, 2021, ISSN 2072-666X
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi12040445

Power Factor Corrector Control Strategies of a Bidirectional Wireless Battery Charger with an Unfolding Active Rectifier

Auteurs: Garcia-Bediaga, A., Avila, A., Alzuguren, I., Sanchez, A., Rujas, A.
Publié dans: IEEE Journal of Emerging and Selected Topics in Power Electronics, Numéro 04 April 2022, 2022, ISSN 2168-6777
Éditeur: IEEE
DOI: 10.1109/jestpe.2022.3164720

Vertical GaN devices: Process and reliability

Auteurs: Shuzhen You, Karen Geens, Matteo Borga, Hu Liang, Herwig Hahn, Dirk Fahle, Michael Heuken, Kalparupa Mukherjee, Carlo De Santi, Matteo Meneghini, Enrico Zanoni, Martin Berg, Peter Ramvall, Ashutosh Kumar, Mikael T. Björk, B. Jonas Ohlsson, Stefaan Decoutere,
Publié dans: Microelectronics Reliability, 2021, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2021.114218

Exploration of gate trench module for vertical GaN devices

Auteurs: M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, B. Bakeroot, S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, G. Meneghesso, E. Zanoni
Publié dans: Microelectronics Reliability, Numéro 114, 2020, Page(s) 113828, ISSN 0026-2714
Éditeur: Elsevier BV
DOI: 10.1016/j.microrel.2020.113828

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Auteurs: Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli
Publié dans: IEEE Electron Device Letters, Numéro 40/8, 2019, Page(s) 1289-1292, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2922204

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Auteurs: Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publié dans: Applied Physics Express, Numéro 13/2, 2020, Page(s) 024006, ISSN 1882-0778
Éditeur: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab6ef8

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Auteurs: Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Karen Geens, Hu Liang, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publié dans: Applied Physics Express, Numéro 13/2, 2020, Page(s) 024004, ISSN 1882-0778
Éditeur: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab6ddd

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.

Auteurs: Kalparupa Mukherjee; Carlo De Santi; Matteo Borga; Karen Geens; Shuzhen You; Benoit Bakeroot; Stefaan Decoutere; Patrick Diehle; Susanne Hübner; Frank Altmann; Matteo Buffolo; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
Publié dans: MATERIALS, Numéro 1, 2021, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma14092316

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

Auteurs: Luca Nela; Catherine Erine; Maria Vittoria Oropallo; Elison Matioli
Publié dans: IEEE Journal of the Electron Devices Society, Numéro 9, 2021, Page(s) 1066 - 1075, ISSN 2168-6734
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3125742

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Auteurs: Luca Nela; Remco Van Erp; Nirmana Perera; Armin Jafari; Catherine Erine; Elison Matioli
Publié dans: IEEE Electron Device Letters, 2021, Page(s) 1642 - 1645, ISSN 0741-3106
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2021.3114056

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

Auteurs: Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot, Shuzhen You, Dirk Fahle, Herwig Hahn, Michael Heuken, Vlad Odnoblyudov, Ozgur Aktas, Cem Basceri, Denis Marcon, Guido Groeseneken, Stefaan Decoutere
Publié dans: IEEE Transactions on Semiconductor Manufacturing, 2020, Page(s) 534 - 538, ISSN 0894-6507
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tsm.2020.3017703

Multi-channel nanowire devices for efficient power conversion.

Auteurs: Nela, L. ; Ma, J. ; Erine, C. ; Xiang, P. ; Shen, T. -H. ; Tileli, V. ; Wang, T. ; Cheng, K. ; Matioli, E.
Publié dans: Nature Electronics, Numéro 4, 2021, Page(s) 284–290, ISSN 2520-1131
Éditeur: Nature Electronics
DOI: 10.1038/s41928-021-00550-8

Finite-size correction for slab supercell calculations of materials with spontaneous polarization

Auteurs: Su-Hyun Yoo, Mira Todorova, Darshana Wickramaratne, Leigh Weston, Chris G. Van de Walle, Jörg Neugebauer
Publié dans: npj Computational Materials, Numéro 7/1, 2021, ISSN 2057-3960
Éditeur: Springer Nature
DOI: 10.1038/s41524-021-00529-1

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Auteurs: Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publié dans: Materials, Numéro 13/21, 2020, Page(s) 4740, ISSN 1996-1944
Éditeur: MDPI Open Access Publishing
DOI: 10.3390/ma13214740

Other (1)

Banishing The Buffer

Auteurs: Jr-Tai Chen
Publié dans: 2020
Éditeur: CS COMPOUND SEMICONDUCTOR

Droits de propriété intellectuelle

Patent (5)

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Numéro de demande/publication: 20 183921
Date: 2020-07-03
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METHOD FOR MANUFACTURING COMMON MODE OR DIFFERENTIAL MODE INDUCTOR AND COMMON MODE OR DIFFERENTIAL MODE INDUCTOR

Numéro de demande/publication: 20 2117362866
Date: 2021-06-29
Demandeur(s): DELTA ELECTRONICS (NORWAY)

DISLOCATION TYPE AND DENSITY DISCRIMINATION IN SEMICONDUCTOR MATERIALS USING CATHODOLUMINESCENCE MEASUREMENTS

Numéro de demande/publication: 20 21061339
Date: 2021-12-04
Demandeur(s): ATTOLIGHT SA

METHOD OF MANUFACTURING A III-N ENHANCEMENT MODE HEMT DEVICE

Numéro de demande/publication: 20 212504
Date: 2020-12-08
Demandeur(s): INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM

METHOD FOR MANUFACTURING A CM OR DM INDUCTOR AND CM OR DM INDUCTOR

Numéro de demande/publication: 20 183915
Date: 2020-07-03
Demandeur(s): DELTA ELECTRONICS (NORWAY)