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Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap

Deliverables

Project website

The UltimateGaN website goes public. (D7.2.1.2)

Growth of p-GaN layers over tri-gate

Report on development of growth techniques of p-GaN over tri-gate structures for normally off behaviour. (D2.4.1.1)

Press Release: Launching the UltimateGaN project

A Press Release about the launch of UltimateGaN is published. (D7.2.1.1)

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Publications

High-performance normally-off tri-gate GaN power MOSFETs

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli
Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, Page(s) 71-74
DOI: 10.1109/ispsd.2019.8757690

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Author(s): M. Heuken, D. Fahle, M. Zhao, K. Geens, X. Li, D. Wellekens, A. Magnani, N. Amirifar, B. Bakeroot, S. You, V. Odnoblyudov, O. Aktas, C. Basceri, D. Marcon, G. Groeseneken, S. Decoutere, H. Hahn
Published in: DGKK wokshop on epitaxy of III-V semiconductor compounds, 2019

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Author(s): Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere
Published in: Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS), 2020

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/8, 2019, Page(s) 1289-1292, ISSN 0741-3106
DOI: 10.1109/led.2019.2922204

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Author(s): Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Applied Physics Express, Issue 13/2, 2020, Page(s) 024006, ISSN 1882-0778
DOI: 10.35848/1882-0786/ab6ef8

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Author(s): Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Karen Geens, Hu Liang, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Applied Physics Express, Issue 13/2, 2020, Page(s) 024004, ISSN 1882-0778
DOI: 10.35848/1882-0786/ab6ddd