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Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap

Deliverables

Project website

The UltimateGaN website goes public. (D7.2.1.2)

Growth of p-GaN layers over tri-gate

Report on development of growth techniques of p-GaN over tri-gate structures for normally off behaviour. (D2.4.1.1)

Cathodoluminescence monitoring of tri-gate strain relaxation

Report on optmization of tri-gate structures based on high resolution cathodoluminescence measurements of strain relaxation. (D2.4.2.1)

Press Release: Launching the UltimateGaN project

A Press Release about the launch of UltimateGaN is published. (D7.2.1.1)

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Publications

Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

Author(s): J. Drobny, J. Marek, A. Kosa, K. Geens, M. Borga, H. Liang, S. You, S. Decoutere, L. Stuchlikova
Published in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 123-126
DOI: 10.1109/asdam50306.2020.9393836

DLTS study of electrically active defects in semi-vertical GaN-on-Si FETs.

Author(s): DROBNÝ, Jakub - MAREK, Juraj - KÓSA, Arpád - VADOVSKÝ, Jakub - GEENS, Karen - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ
Published in: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020

Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices

Author(s): Tailang Xie, Martin Krupinski, Sven Jachalke, Claudia Silva, Andreas Groser, Jan Gartner, Rico Hentschel, Thomas Mikolajick, Andre Wachowiak
Published in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 135-138
DOI: 10.1109/asdam50306.2020.9393849

Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

Author(s): B. Bakeroot, K. Geens, M. Borga, H. Liang, S. You, S. Decoutere
Published in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 1-4
DOI: 10.1109/asdam50306.2020.9393871

Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Author(s): K. Geens, H. Herwig, H. Liang, M. Borga, D. Cingu, S. You, M. Marx, R. Oligschlaeger, D. Fahle, M. Heuken, V. Odnoblyudov, O. Aktas, C. Basceri, S. Decoutere
Published in: 2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), Issue 24.5.2021, 2021

Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices.

Author(s): MAREK, Juraj - MIKOLÁŠEK, Miroslav - DROBNÝ, Jakub - KOZÁRIK, Jozef - CHVÁLA, Aleš - GEENS, K. - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ, Ľubica
Published in: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020

High-performance normally-off tri-gate GaN power MOSFETs

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli
Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, Page(s) 71-74
DOI: 10.1109/ispsd.2019.8757690

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Author(s): M. Heuken, D. Fahle, M. Zhao, K. Geens, X. Li, D. Wellekens, A. Magnani, N. Amirifar, B. Bakeroot, S. You, V. Odnoblyudov, O. Aktas, C. Basceri, D. Marcon, G. Groeseneken, S. Decoutere, H. Hahn
Published in: DGKK wokshop on epitaxy of III-V semiconductor compounds, 2019

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Author(s): Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere
Published in: Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS), 2020

Investigation of semi-vertical GaN FET structures using EBIC method

Author(s): Šatka, A. - Priesol, J. – You, S. – Geens, K. – Decoutere, S.
Published in: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020, Page(s) 92-93

Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations

Author(s): Su-Hyun Yoo, Liverios Lymperakis, Jörg Neugebauer
Published in: Physical Review Materials, Issue 5/4, 2021, Page(s) 9, ISSN 2475-9953
DOI: 10.1103/physrevmaterials.5.044605

Exploration of gate trench module for vertical GaN devices

Author(s): M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, B. Bakeroot, S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, G. Meneghesso, E. Zanoni
Published in: Microelectronics Reliability, Issue 114, 2020, Page(s) 113828, ISSN 0026-2714
DOI: 10.1016/j.microrel.2020.113828

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli
Published in: IEEE Electron Device Letters, Issue 40/8, 2019, Page(s) 1289-1292, ISSN 0741-3106
DOI: 10.1109/led.2019.2922204

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Author(s): Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Applied Physics Express, Issue 13/2, 2020, Page(s) 024006, ISSN 1882-0778
DOI: 10.35848/1882-0786/ab6ef8

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Author(s): Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Karen Geens, Hu Liang, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Applied Physics Express, Issue 13/2, 2020, Page(s) 024004, ISSN 1882-0778
DOI: 10.35848/1882-0786/ab6ddd

Finite-size correction for slab supercell calculations of materials with spontaneous polarization

Author(s): Su-Hyun Yoo, Mira Todorova, Darshana Wickramaratne, Leigh Weston, Chris G. Van de Walle, Jörg Neugebauer
Published in: npj Computational Materials, Issue 7/1, 2021, ISSN 2057-3960
DOI: 10.1038/s41524-021-00529-1

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Author(s): Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Materials, Issue 13/21, 2020, Page(s) 4740, ISSN 1996-1944
DOI: 10.3390/ma13214740

Banishing The Buffer

Author(s): Jr-Tai Chen
Published in: 2020