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Research for GaN technologies, devices, packages and applications to address the challenges of the future GaN roadmap

Deliverables

Project website

The UltimateGaN website goes public D7212

Growth of p-GaN layers over tri-gate

Report on development of growth techniques of pGaN over trigate structures for normally off behaviour D2411

Cathodoluminescence monitoring of tri-gate strain relaxation

Report on optmization of trigate structures based on high resolution cathodoluminescence measurements of strain relaxation D2421

Press Release: Launching the UltimateGaN project

A Press Release about the launch of UltimateGaN is published D7211

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Publications

Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis

Author(s): A Nardo; C de Santi; C Carraro; F Sgarbossa; M Buffolo; P Diehle; S Gierth; F Altmann; H Hahn; D Fahle; M Heuken; M Fouchier; A Gasparotto; E Napolitani; G Meneghesso; E Zanoni; M Meneghini
Published in: Journal of Physics D: Applied Physics, 2, 2022, ISSN 0022-3727
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6463/ac4f0c

Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Author(s): A. Nardo, C. De Santi, C. Koller, C. Ostermaier, I. Daumiller, G. Meneghesso, E. Zanoni, M. Meneghini
Published in: Microelectronics Reliability, 126, 2021, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2021.114255

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Author(s): Minghua Zhu, Catherine Erine, Jun Ma, Mohammad Samizadeh Nikoo, Luca Nela, Pirouz Sohi, Elison Matioli
Published in: IEEE Electron Device Letters, 42/1, 2021, Page(s) 82-85, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.3037026

Efficient electronic passivation scheme for computing low-symmetry compound semiconductor surfaces in density-functional theory slab calculations

Author(s): Su-Hyun Yoo, Liverios Lymperakis, Jörg Neugebauer
Published in: Physical Review Materials, 5/4, 2021, Page(s) 9, ISSN 2475-9953
Publisher: American Physical Society
DOI: 10.1103/physrevmaterials.5.044605

GaN-based power devices: Physics, reliability, and perspectives

Author(s): Matteo Meneghini, Carlo De Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, Farid Medjdoub, Gaudenzio Meneghesso, Giovanni Verzellesi, Enrico Zanoni, Elison Matioli
Published in: Journal of Applied Physics, 130, 2021, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/5.0061354

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

Author(s): Luca Nela, Halil Kerim Yildirim, Catherine Erine, Remco Van Erp, Peng Xiang, Kai Cheng, Elison Matioli
Published in: IEEE Electron Device Letters, 42/1, 2021, Page(s) 86-89, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2020.3038808

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Author(s): Kalparupa Mukherjee; Carlo De Santi; Matteo Buffolo; Matteo Borga; Shuzhen You; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
Published in: ISSN: 2072-666X, 4, 2021, ISSN 2072-666X
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi12040445

Vertical GaN devices: Process and reliability

Author(s): Shuzhen You, Karen Geens, Matteo Borga, Hu Liang, Herwig Hahn, Dirk Fahle, Michael Heuken, Kalparupa Mukherjee, Carlo De Santi, Matteo Meneghini, Enrico Zanoni, Martin Berg, Peter Ramvall, Ashutosh Kumar, Mikael T. Björk, B. Jonas Ohlsson, Stefaan Decoutere,
Published in: Microelectronics Reliability, 2021, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2021.114218

Exploration of gate trench module for vertical GaN devices

Author(s): M. Ruzzarin, K. Geens, M. Borga, H. Liang, S. You, B. Bakeroot, S. Decoutere, C. De Santi, A. Neviani, M. Meneghini, G. Meneghesso, E. Zanoni
Published in: Microelectronics Reliability, 114, 2020, Page(s) 113828, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2020.113828

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Catherine Erine, Elison Matioli
Published in: IEEE Electron Device Letters, 40/8, 2019, Page(s) 1289-1292, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2922204

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Author(s): Matteo Borga, Kalparupa Mukherjee, Carlo De Santi, Steve Stoffels, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Applied Physics Express, 13/2, 2020, Page(s) 024006, ISSN 1882-0778
Publisher: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab6ef8

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Author(s): Kalparupa Mukherjee, Matteo Borga, Maria Ruzzarin, Carlo De Santi, Steve Stoffels, Shuzhen You, Karen Geens, Hu Liang, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Applied Physics Express, 13/2, 2020, Page(s) 024004, ISSN 1882-0778
Publisher: Japan Soc of Applied Physics
DOI: 10.35848/1882-0786/ab6ddd

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization.

Author(s): Kalparupa Mukherjee; Carlo De Santi; Matteo Borga; Karen Geens; Shuzhen You; Benoit Bakeroot; Stefaan Decoutere; Patrick Diehle; Susanne Hübner; Frank Altmann; Matteo Buffolo; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
Published in: MATERIALS, 1, 2021, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma14092316

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

Author(s): Luca Nela; Catherine Erine; Maria Vittoria Oropallo; Elison Matioli
Published in: IEEE Journal of the Electron Devices Society, 9, 2021, Page(s) 1066 - 1075, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3125742

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Author(s): Luca Nela; Remco Van Erp; Nirmana Perera; Armin Jafari; Catherine Erine; Elison Matioli
Published in: IEEE Electron Device Letters, 2021, Page(s) 1642 - 1645, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2021.3114056

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

Author(s): Xiangdong Li, Karen Geens, Dirk Wellekens, Ming Zhao, Alessandro Magnani, Nooshin Amirifar, Benoit Bakeroot, Shuzhen You, Dirk Fahle, Herwig Hahn, Michael Heuken, Vlad Odnoblyudov, Ozgur Aktas, Cem Basceri, Denis Marcon, Guido Groeseneken, Stefaan Decoutere
Published in: IEEE Transactions on Semiconductor Manufacturing, 2020, Page(s) 534 - 538, ISSN 0894-6507
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tsm.2020.3017703

Multi-channel nanowire devices for efficient power conversion.

Author(s): Nela, L. ; Ma, J. ; Erine, C. ; Xiang, P. ; Shen, T. -H. ; Tileli, V. ; Wang, T. ; Cheng, K. ; Matioli, E.
Published in: Nature Electronics, 4, 2021, Page(s) 284–290, ISSN 2520-1131
Publisher: Nature Electronics
DOI: 10.1038/s41928-021-00550-8

Finite-size correction for slab supercell calculations of materials with spontaneous polarization

Author(s): Su-Hyun Yoo, Mira Todorova, Darshana Wickramaratne, Leigh Weston, Chris G. Van de Walle, Jörg Neugebauer
Published in: npj Computational Materials, 7/1, 2021, ISSN 2057-3960
Publisher: Springer Nature
DOI: 10.1038/s41524-021-00529-1

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Author(s): Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: Materials, 13/21, 2020, Page(s) 4740, ISSN 1996-1944
Publisher: MDPI Open Access Publishing
DOI: 10.3390/ma13214740

Study of Emission and Capture Processes in Semi-vertical GaN-on-Si Trench-MOSFETs

Author(s): J. Drobny, J. Marek, A. Kosa, K. Geens, M. Borga, H. Liang, S. You, S. Decoutere, L. Stuchlikova
Published in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 123-126, ISBN 978-1-7281-9776-0
Publisher: IEEE
DOI: 10.1109/asdam50306.2020.9393836

An Ultra-Low Weight Bidirectional Back-End PFC Topology

Author(s): Alex Sanchez; Asier Garcia-Bediaga; Itziar Alzuguren; Iñigo Zubitur; Alejandro Rujas
Published in: 2021 IEEE Energy Conversion Congress and Exposition (ECCE), 10-14.October 2021, 2021, ISBN 978-1-7281-5135-9
Publisher: IEEE
DOI: 10.1109/ecce47101.2021.9595169

DLTS study of electrically active defects in semi-vertical GaN-on-Si FETs.

Author(s): DROBNÝ, Jakub - MAREK, Juraj - KÓSA, Arpád - VADOVSKÝ, Jakub - GEENS, Karen - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ
Published in: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020
Publisher: Comenius University Bratislava

Investigation of p-GaN tri-Gate normally-Off GaN Power MOSHEMTs

Author(s): Minghua Zhu, Jun Ma, Elison Matioli
Published in: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, Page(s) 345-348, ISBN 978-1-7281-4836-6
Publisher: IEEE
DOI: 10.1109/ispsd46842.2020.9170183

Investigation of HVPE grown layers on MOVPE GaN/sapphire templates for application as drift layer in vertical GaN power devices

Author(s): Tailang Xie, Martin Krupinski, Sven Jachalke, Claudia Silva, Andreas Groser, Jan Gartner, Rico Hentschel, Thomas Mikolajick, Andre Wachowiak
Published in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 135-138, ISBN 978-1-7281-9776-0
Publisher: IEEE
DOI: 10.1109/asdam50306.2020.9393849

Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

Author(s): B. Bakeroot, K. Geens, M. Borga, H. Liang, S. You, S. Decoutere
Published in: 2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM), 2020, Page(s) 1-4, ISBN 978-1-7281-9776-0
Publisher: IEEE
DOI: 10.1109/asdam50306.2020.9393871

Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Author(s): Karen Geen, Hahn Herwig, Hu Liang, Matteo Borga, Deepthi Cingu, Shuzhen You, Matthias Marx, Robert Oligschlaeger, Dirk Fahle, Michael Heuken, Vladimir Odnoblyudov, Ozgur Aktas, Cem Basceri, Steaan Decoutere
Published in: 2021 International Conference on Compound Semiconductor Manufacturing Technology, 24-27, May, 2021, 2021
Publisher: CSMANTECH

Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

Author(s): K. Geens, H. Herwig, H. Liang, M. Borga, D. Cingu, S. You, M. Marx, R. Oligschlaeger, D. Fahle, M. Heuken, V. Odnoblyudov, O. Aktas, C. Basceri, S. Decoutere
Published in: 2021 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech), 24.5.2021, 2021
Publisher: CS Mantech

Degradation of 600V GaN HEMT with p-GaN gate under repetitive short circuit stress

Author(s): KOZÁRIK, Jozef - MAREK, Juraj - MINÁRIK, Michal - CHVÁLA, Aleš - GAŠPAREK, Krisztián - JAGELKA, Martin - DONOVAL, Martin
Published in: 9th International conference on advances in electronic and photonic technologies, 2021, ISBN 978-80-554-1806-3
Publisher: EDIS

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Author(s): Luca Nela; Catherine Erine; Jun Ma; Halil Kerim Yildirim; Remco Van Erp; Peng Xiang; Kai Cheng; Elison Matioli
Published in: 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 30 May-3 June 2021, 2021, Page(s) 143-146, ISBN 978-4-88686-422-2
Publisher: IEEE
DOI: 10.23919/ispsd50666.2021.9452238

Electrical and DLTS Characterization of Gate Interfaces in GaN-based Trench-gate semi-vertical MOS devices.

Author(s): MAREK, Juraj - MIKOLÁŠEK, Miroslav - DROBNÝ, Jakub - KOZÁRIK, Jozef - CHVÁLA, Aleš - GEENS, K. - BORGA, Matteo - LIANG, Hu - YOU, Shuzhen - DECOUTERE, Stefaan - STUCHLÍKOVÁ, Ľubica
Published in: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020
Publisher: Comenius University Bratislava

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Author(s): Jun Ma, Catherine Erine, Minghua Zhu, Nela Luca, Peng Xiang, Kai Cheng, Elison Matioli
Published in: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, Page(s) 4.1.1-4.1.4, ISBN 978-1-7281-4032-2
Publisher: IEEE
DOI: 10.1109/iedm19573.2019.8993536

High-performance normally-off tri-gate GaN power MOSFETs

Author(s): Minghua Zhu, Jun Ma, Luca Nela, Elison Matioli
Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, Page(s) 71-74, ISBN 978-1-7281-0581-9
Publisher: IEEE
DOI: 10.1109/ispsd.2019.8757690

Epitaxial growth by MOCVD on 200 mm engineered substrates for power devices & ICs beyond 650 V

Author(s): M. Heuken, D. Fahle, M. Zhao, K. Geens, X. Li, D. Wellekens, A. Magnani, N. Amirifar, B. Bakeroot, S. You, V. Odnoblyudov, O. Aktas, C. Basceri, D. Marcon, G. Groeseneken, S. Decoutere, H. Hahn
Published in: DGKK wokshop on epitaxy of III-V semiconductor compounds, 2019
Publisher: TU Dresden

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Author(s): Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, and Stefaan Decoutere
Published in: Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS), 2020
Publisher: IEEE

Investigation of semi-vertical GaN FET structures using EBIC method

Author(s): Šatka, A. - Priesol, J. – You, S. – Geens, K. – Decoutere, S.
Published in: Proc. of 11th Solid State Surfaces and Interfaces (Extended abstract book), 2020, Page(s) 92-93
Publisher: Comenius University Bratislava

Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

Author(s): E. Fabris; M. Borga; N. Posthuma; M. Zhao; B. De Jaeger; S. You; S. Decoutere; M. Meneghini; G. Meneghesso; E. Zanoni
Published in: IEEE International Reliability Physics Symposium (IRPS), 21-25 March 2021, 2021, ISBN 978-1-7281-6893-7
Publisher: IEEE
DOI: 10.1109/irps46558.2021.9405097

Investigation of EBIC line profiles at the p-n junction by numerical simulations using Monte Carlo method.

Author(s): Priesol, J. – Šatka, A. – Geens, K
Published in: Extended abstract book of 7th conference Progress in Applied Surface, Inteface and Thin Film Science – Solar Renewable Energy News VII (SURFINT-SREN VII), 2021, Page(s) 49-50, ISBN 978-80-223-5296-3
Publisher: Comenius University

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Author(s): Taifang Wang, Mohammad Samizadeh Nikoo, Luca Nela, Elison Matioli
Published in: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, Page(s) 135-138, ISBN 978-4-88686-422-2
Publisher: IEEE
DOI: 10.23919/ispsd50666.2021.9452252

Degradation of 600V GaN HEMTs under repetitive short circuit conditions

Author(s): KOZÁRIK, Jozef - MAREK, Juraj - MINÁRIK, Michal - CHVÁLA, Aleš - DEBNÁR, Tomáš - DONOVAL, Martin - STUCHLÍKOVÁ, Ľubica
Published in: ISPS '21 : 15th International Seminar on Power Semiconductors, 2021, ISBN 978-80-01-06874-8
Publisher: Czech Technical University in Prague

Banishing The Buffer

Author(s): Jr-Tai Chen
Published in: 2020
Publisher: CS COMPOUND SEMICONDUCTOR