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Gliding epitaxy for inorganic space-power sheets

Project description

New photovoltaic system for future space technologies

Artificial satellites rely on photovoltaic solar panels (PV) to generate electricity. But the PV panels are large and heavy due to a thick coverglass protecting them from radiation damage. They are also very expensive. The EU-funded GLISS project supports the research on a novelty technology of radiation tolerant, low mass, flexible and economical photovoltaic systems. It will develop an ultra-thin (<100 nm) III-V PV based on the solar cells with quantum-confined structure and an innovative gliding epitaxy approach to release crystalline films from their growth wafers. The GLISS will allow reduce costs, boost innovation in satellite design hybrid devices and will enhance global sustainable development of solar energy.

Objective

Current satellite technologies are limited by the photovoltaic (PV) panels they require for power generation. Despite steady advances in efficiency afforded by modern III-V multijunction PV, these large, rigid panels are expensive to produce and launch due to their heavy on-wafer architecture and thick protective coverglass, which is necessary to prevent radiation damage. I will develop and demonstrate ultra-thin (<100 nm) III-V PV, for highly efficient, lightweight, and flexible satellite PV provision. Decreased costs will help accelerate universal availability of satellite services, essential for sustainable global development, and removing PV form factor restrictions will drive innovation in satellite design.

Realizing this goal will require a translational program of research, ranging from fundamental design parameters to scalable fabrication methodologies. I recently demonstrated that the ultra-thin form factor exhibits intrinsic radiation tolerance, suggesting the prospect of a coverglass free, flexible system. I will target high efficiency in this geometry by engineering the device architecture to rebalance carrier interaction rates to support generation of non-equilibrium hot-carriers through the use of nanophotonic structures for strong E-field enhancement. The electronic structure will be designed for energy selective hot-carrier extraction, allowing highly efficient operation. Scalable fabrication will be achieved via development of a novel crystal growth method, in which III-V films are grown epitaxially on 2D monolayers. The 2D interface will prevent strong bonding between the deposited layer and an underlying growth substrate, which provides registry information to the crystal as it nucleates. The epitaxial layer will be free to glide across the growth surface during film formation, allowing the mechanical release of pristine films and the unlimited reuse of the growth substrates, enabling scalable, economically viable production of this new device.

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.

ERC-STG - Starting Grant

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Call for proposal

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(opens in new window) ERC-2019-STG

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Host institution

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 1 797 789,00
Address
TRINITY LANE THE OLD SCHOOLS
CB2 1TN CAMBRIDGE
United Kingdom

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Region
East of England East Anglia Cambridgeshire CC
Activity type
Higher or Secondary Education Establishments
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 1 797 789,00

Beneficiaries (1)

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