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Unveiling down to 0-dimensional confinements in GaN devices for RF power application

Project description

Imaging carriers, defects and potential landscape in III-Nitride semiconductors and devices

Gallium nitride (GaN) is a wide band gap material whose unique properties offer numerous advantages in the field of power and radio frequency electronics in comparison to traditional semiconductor materials. While it has been gaining increasing scientific and industrial attention, it requires immediate solutions to severe shortcomings (i.e. in epitaxial growth, device processing technology and reliability) to advance its development. These issues are simultaneously entangled with challenges in applying standard characterisation methods sensitive to chemical and electronic properties, thus inhibiting deeper insight and ultimate control in design. The EU-funded UNOGAN project will develop scanning probe microscopy techniques to enable spatially resolved local potential, charge and resistance profiles leading to better understanding of the physics, thereby improving high electron mobility transistors.


Net EU contribution
€ 166 320,00
Kapeldreef 75
3001 Leuven

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Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven
Activity type
Research Organisations
Other funding
€ 0,00