Descripción del proyecto
Obtención de imágenes de portadores, defectos y panorama potencial en dispositivos y semiconductores de nitruro del grupo III
El nitruro de galio (GaN) es un material con una amplia banda prohibida cuyas propiedades únicas ofrecen numerosas ventajas en el campo de la electrónica de potencia y radiofrecuencia en comparación con los materiales semiconductores tradicionales. Si bien ha ido ganando cada vez más atención científica e industrial, para avanzar en su desarrollo se requieren soluciones inmediatas a sus deficiencias graves (es decir, en el crecimiento epitaxial, la tecnología de procesamiento de dispositivos y la fiabilidad). Estos problemas se entrelazan simultáneamente con los retos que suponen la aplicación de métodos de caracterización estándar sensibles a las propiedades químicas y electrónicas, lo que limita un mayor conocimiento y control final en el diseño. En el proyecto UNOGAN, financiado con fondos europeos, se desarrollarán técnicas de microscopía de sonda de barrido para lograr perfiles locales de resistencia, carga y potencia espacialmente resueltos, lo que permitirá comprender mejor la física y mejorar los transistores de alta movilidad de electrones.
Objetivo
UNOGAN aims at developing a fundamental approach for quantitative assessment of polarization-induced 2D carriers (and their type) or junctions at the interface(s) and focuses on unraveling chemical and electronic properties of critical regions, for e.g. recessed surfaces of the gate, which is expected to shed a deeper insight into one of the severe challenges GaN industry is facing. Though successfully applied in narrow-bandgap semiconductors like Si, this SPM based approach currently face challenges of highly resistive wide band gap (Al,Ga)N. In the project, not only identification of the key issues but major improvements and even key instrumental development of E-SPM is proposed for such a rigid system, from which a correlated-analysis of spatially resolved local potential, charge and resistance in combination with computational methodology could be developed. This approach will lead to major advancements in the improvement of III-nitride based high electron mobility transistors (HEMTs) program of IMEC. Over the years, the applicant has gained significant experience in the electrical study of III-nitride materials through scanning probe, defect sensitive spectroscopies and transmission electron microscopies. UNOGAN research will channel this knowledge towards new horizons at the forefront of materials science, building a strong collaboration network involving well-established European laboratories and companies which are leaders in the field. The new skills acquired during the two-year project will serve him to boost his research career, gain independence and place the host institution as an international reference in nanoscale device characterization.
Ámbito científico
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MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)Coordinador
3001 Leuven
Bélgica