Project description DEENESFRITPL Cutting down on dimensions to upscale high-performing optoelectronic devices Optoelectronic devices are at the core of today’s information revolution, bridging digital electronics and optical fibre communications. As the global internet traffic increases with a higher rate than the capacities of optical networks, new miniaturised optoelectronic technologies integrated on silicon could prove to be a powerful solution. The EU-funded SubNanoOptoDevices project plans to develop a new technology for optoelectronic components based on low-dimensional materials to achieve increased data rates and reduced power consumption. It will explore a radically new way to engineer the electrical and optical properties of these materials (specifically 2D materials and van der Waals heterostructures) to achieve, for instance, optical modulators with tunable wavelengths and unprecedented modulation speeds. Show the project objective Hide the project objective Objective Optoelectronic devices are at the core of today’s information revolution, bridging digital electronics and optical fiber telecommunications. However, there is a worrisome disparity in the scaling of global internet traffic (growing at 60% rate every year) and the capacity of the optical network (with growth rate of just 20%). Therefore, there is a need for new miniaturized optoelectronic technologies, and integration on silicon is a must. The objective of this project is to address this issue with a new technology for ultrafast optoelectronic components based on low-dimensional materials to achieve increased data rate and reduced footprint and power consumption. It will explore a radically new way to engineer the electrical and optical properties of these materials (specifically 2D materials and van der Waals heterostructures), to achieve, for instance, optical modulators with tunable operation wavelength and unprecedented modulation speeds and footprints. One key innovation of this approach is the use of a new gate oxide nanolamination technique able to apply a periodical electrostatic field (with sharp variations below 1 nm) on any 2D material to modify and dynamically tune their band structures. These superlattices are expected to show tunable optical properties, quantum confinement and intersubband transitions, which will pave the way to new optoelectronic components such as modulators, photodetectors, tunable lasers and light emitting diodes. This approach can be used to achieve improved coupling with polaritons in 2D materials as well, which will enhance light-matter interactions reducing the footprint of the devices. The fabrication is compatible with multiple substrate materials, including silicon and III-V semiconductors. The project will focus on large area devices operating at room temperature and integrated on silicon, to ease the subsequent implementation of this groundbreaking technology into large scale production. Fields of science engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensorsengineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresengineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunicationstelecommunications networksoptical networksengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringdigital electronicsnatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) H2020-EU.1.1. - EXCELLENT SCIENCE - European Research Council (ERC) Main Programme Topic(s) ERC-2020-STG - ERC STARTING GRANTS Call for proposal ERC-2020-STG See other projects for this call Funding Scheme ERC-STG - Starting Grant Coordinator FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA Net EU contribution € 1 499 500,00 Address Via morego 30 16163 Genova Italy See on map Region Nord-Ovest Liguria Genova Activity type Research Organisations Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Other funding € 0,00 Beneficiaries (1) Sort alphabetically Sort by Net EU contribution Expand all Collapse all FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA Italy Net EU contribution € 1 499 500,00 Address Via morego 30 16163 Genova See on map Region Nord-Ovest Liguria Genova Activity type Research Organisations Links Contact the organisation Opens in new window Website Opens in new window Participation in EU R&I programmes Opens in new window HORIZON collaboration network Opens in new window Other funding € 0,00
