CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.
Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .
Resultados aprovechables
It was the objective of the ADMIRAL project to develop light-emitting diodes and lasers emitting in the mid-infrared (MIR) and consisting of group III-antimonide semiconductors. The devices were bipolar devices aimed at operating in the current injection mode, favorably up or close to room temperature (RT). The largest challenge was the deposition of the layer structures by metal organic vapor phase epitaxy (MOVPE), a process technology, which presently is most widely used for industrial application. In the future it will certainly be the technology for mass production of devices operating in the MIR. The 36 month ADMIRAL project was brought to a conclusion with all deliverables of the work plan submitted in a timely manner: Overall project progress has been measured against four milestones, of which three have been fully completed in a successful manner. The final milestone was 80% achieved however it proved too optimistic a goal to reach RT operation within the time constraints of the project.
The whole spectrum of the steps necessary for the achievement of the project goals was investigated, starting with the development of novel precursors (EPICHEM), continuing with their test including vapor pressure measurements and epitaxy test runs (RWTH). Simultanously layer structures were designed and simulated, which should enable the room temperature operation of LEDs and laser (UM2). Also simultaneously special methods for the evaluation of both grown layer structures and fully processed devices were developed (IP-AVCR). During the course of the project further improvements of the epitaxial equipment were identified and specially manufactured parts were installed and tested (AIXTRON).
As a general result it can be stated that the goals were achieved in such a way that MOVPE grown LEDs, based on an Al-free material system, operate up to RT and at wavelengths from three to four micrometers. MOVPE lasers, based on this system, operate at temperatures up to 135ºK with low threshold current densities. These devices were not available elsewhere at the start of the project and only one group reports higher operating temperatures using the MOVPE growth technique. The active regions in these devices form the essential part of Al-containing lasers, which are expected to operate at RT due to better confinement properties. Considerable progress was made in the oxygen-free synthesis of group III and Sb precursors resulting in a reduction of background impurities in the epitaxial layers such as carbon and oxygen by orders of magnitude. Only the commercially available As precursor, tertiarybutylarsine now suffers the severe handicap of high oxygen contamination. Despite this, the full set of process parameters for the deposition of Al-containing laser structures is available and only the quality of the overall combined structure has prevented the fabrication of RT operating lasers.
With these results achieved the project ADMIRAL represents the international cutting edge of current R&D in MOVPE grown MIR lasers. ADMIRAL was the first group to obtain MOVPE RT LED's in the Sb system operating at 3.3micons and considerable improvements of this technology were realised. A major impact on the scientific community was achieved with numerous publications and the hosting of four topical MOVPE conferences by the ADMIRAL participating academic institutions during the course of the project.
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