Low thermal budget epitaxy of SI and SI-alloys

Información del proyecto

Identificador del acuerdo de subvención: CIPD940021

Proyecto cerrado

Fecha de inicio 1 Noviembre 1994

Fecha de finalización 31 Octubre 1996

Financiado con arreglo a

• Scientific and technological cooperation between the European Community and European non-member countries, 1992-

Coste total

Sin datos

Aportación de la UE

Sin datos

Coordinado por

INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW
Belgium

Objetivo

Low thermal budget epitaxy of Si and SiGe allows to obtain thin monocrystal line layers with very sharp dopant transitions. Therefore, it allows to : cope with the requirements of IC miniturisation in the vertical dimension. The original Network programme is specifically aiming at the exploration of the possibilities of strained SiGe layers grown by various low temperature techniques. In this COST-proposal, two associated partners from Central Europe are presenting a scientifical cooperation project to participate in the mentioned Network. A first partner, Microvacuum Ltd., who is an industrial company, will concentrate on the development of an advanced commercial RTCVD-reactor. This is an ongoing project, partly financed by the Hungarian Academy of Sciences. Microvauum Ltd aims at learning and gathering of experience by developing close contacts with the partners of the existing Network. In this way, a lot of "dead end" streets can be avoided so speeding uptheir research. On the other hand, considerable attention will be devoted to substrate precleaning, plasma enhancement and the effect of C1-content of the reaction gasès. The results of this work are open the Network-partners. Microvacuum is also willing to share their knowledge and experience in building and installing of LPCVD-aquipments and toxic, hazardous gas distribution systems with the Network-partners. A second partner is the Research Institute for Particle and Nuclear Physics of the Hungarian Academy of Sciences. Their main interest is in the fabrication and characterization of epitaxial and mesotaxial transition metal-silicide layers in Si and SiGe epi-layers. This is a particularly important topic because it can fill an existing gap in advanced micro-electronic IC-schemes with respect to contacting-metallisation. Eespecially for SiGe, this would be a significant contribution to and extension of the Network-programme. Fabrication of the layers is planned to be carried out by deposition of transition metals, mainly Fe and Co, by PVD and/or Ion Implantation. The structural epi-quality, the local electronic structure and electrical properties of these layers will be determinded by Mössbauer spectroscopy, XRD, RBS and He-ion channeling.

Ámbito científico (EuroSciVoc)

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Programa(s)

• IC-PECO/COPERNICUS - Scientific and technological cooperation between the European Community and European non-member countries, 1992-

Tema(s)

• 0401 - CEEC participation in HUMAN CAPITAL & MOBILITY programme (NETWORKS)

Convocatoria de propuestas

Datos no disponibles

Régimen de financiación

CSC - Cost-sharing contracts

Coordinador

INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW

• Aportación de la UE: Sin datos
• Dirección: 75,Kapeldreef 75 ; 3001 HEVERLEE ; Bélgica
• Coste total: Sin datos

Participantes (2)

INSTITUTE FOR PARTICLE AND NUCLEAR PHYSICS - HUNGARIAN ACADEMY OF SCIENCES

Hungría

• Aportación de la UE: Sin datos
• Dirección: 1525 BUDAPEST
• Coste total: Sin datos

MICROVACUUM LTD.

Hungría

• Aportación de la UE: Sin datos
• Dirección: 10,Kerekgyarto U. 10 ; 1147 BUDAPEST
• Coste total: Sin datos