Livrables
-A new method of fabrication of p-type ZnO yielding superior electrical properties was developed. The method relies on oxidation of sputter-deposited Zn(3)N(2) doped with Cr. The x-ray diffraction data confirmed the hexagonal structure of ZnO without inclusion of other phases. SIMS analysis enabled to determine the concentration of intentionally introduced dopants such as nitrogen (up to 1021at/cm{3}), chromium and manganese.
-A method of ZnO surface passivation was developed that maintains its p-type of conductivity over time-scale of months.
-The AMORE p-ZnO:N co-doped with Cr up to 14% as well as insulating ZnO:N:Cr containing up to 3% of Mn samples did not show ferromagnetic behaviour, however further experiments are required such as limiting the amount of hydrogen present, the main hole killer in p-type ZnO, and other contaminants introduced during the growth of ZnO.
-The transmittance of p-type ZnO:N:Cr films in the whole visible wavelength spectrum is about 50% making it very interesting in the context of transparent electronics. Potential Applications: New types of electronics including transparent electronics.
Potential End Users: Semiconductor manufacturersMain
Features/Benefits: Possibility of relatively easy fabrication of p-type ZnO (so far rated in the literature as close to impossible) opens up a path to transparent p-n junctions incorporating this material as well as is of importance for spintronic applications;
Market Application Sectors: New components and in-situ components on transparent media;
Potential Barriers: Necessary further increase of p-type doping efficiency, particularly in the case of Mn-containing compounds.
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