Objective
Silicon Carbide (SiC) is today considered as the first semiconductor material which will enable development of high power /high temperature electronic devices and industrial high temperature sensors. There are 2 main polytypes of SiC crystals : hexagonal and cubic. Only commercial hexagonal SiC is currently available on the market, which is dominated by one US company. Today the physical and electronic properties of Cubic SiC are approximately known. However some of these properties present considerable interest and most of the current hexagonal SiC applications could get advantage from the use of cubic Sic. Cubic SiC would also allow to get new devices, the MOS structures, which are still missing today due to hexagonal SiC limitations. To realize the full potential of SiC as semiconductor material, the aim of SOLSIC is to develop bulk cubic Sic crystals and waters to update cubic SiC properties and process MOS demonstrator devices.
Fields of science
- natural scienceschemical sciencesinorganic chemistryinorganic compounds
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensors
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
- natural scienceschemical sciencesinorganic chemistrymetalloids
Call for proposal
Data not availableFunding Scheme
CSC - Cost-sharing contractsCoordinator
38054 Grenoble
France
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Participants (8)
Electrum 236 Kista
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54006 Thessaloniki
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ST4 7LQ Stoke-on-trent
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38435 Echirolles
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12489 Berlin
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73375 Le Bourget Du Lac
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34095 Montpellier
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91058 Erlangen
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