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New cubic silicon carbide material for innovative semiconductor devices

Ziel

Silicon Carbide (SiC) is today considered as the first semiconductor material which will enable development of high power /high temperature electronic devices and industrial high temperature sensors. There are 2 main polytypes of SiC crystals : hexagonal and cubic. Only commercial hexagonal SiC is currently available on the market, which is dominated by one US company. Today the physical and electronic properties of Cubic SiC are approximately known. However some of these properties present considerable interest and most of the current hexagonal SiC applications could get advantage from the use of cubic Sic. Cubic SiC would also allow to get new devices, the MOS structures, which are still missing today due to hexagonal SiC limitations. To realize the full potential of SiC as semiconductor material, the aim of SOLSIC is to develop bulk cubic Sic crystals and waters to update cubic SiC properties and process MOS demonstrator devices.

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COMMISSARIAT A L'ENERGIE ATOMIQUE
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38054 Grenoble
Frankreich

Beteiligte (8)

ACREO AB.
Schweden
Adresse
Electrum 236
Electrum 236 Kista
ARISTOTLE UNIVERSITY OF THESSALONIKI
Greece
Adresse
University Campus
54006 Thessaloniki
BRITISH CERAMIC RESEARCH LTD.
United Kingdom
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Queens Road, Penkhull
ST4 7LQ Stoke-on-trent
CYBERSTAR S.A.
Frankreich
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Parc Sud Galaxie - Rue Des Tropiques 1
38435 Echirolles
FORSCHUNGSVERBUND BERLIN E.V.
Deutschland
Adresse
Rüdower Chaussee 6 Geb. 18.46 - 17
12489 Berlin
NOVASIC S.A.
Frankreich
Adresse
Savoie Technolac - Arche Bèt.4
73375 Le Bourget Du Lac
UNIVERSITE DE MONTPELLIER II - SCIENCES ET TECHNIQUES DU LANGUEDOC
Frankreich
Adresse
Place Eugène Bataillon
34095 Montpellier
UNIVERSITY OF ERLANGEN-NUREMBERG
Deutschland
Adresse
Staudtstrasse 7 - Building A3
91058 Erlangen