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New cubic silicon carbide material for innovative semiconductor devices

Obiettivo

Silicon Carbide (SiC) is today considered as the first semiconductor material which will enable development of high power /high temperature electronic devices and industrial high temperature sensors. There are 2 main polytypes of SiC crystals : hexagonal and cubic. Only commercial hexagonal SiC is currently available on the market, which is dominated by one US company. Today the physical and electronic properties of Cubic SiC are approximately known. However some of these properties present considerable interest and most of the current hexagonal SiC applications could get advantage from the use of cubic Sic. Cubic SiC would also allow to get new devices, the MOS structures, which are still missing today due to hexagonal SiC limitations. To realize the full potential of SiC as semiconductor material, the aim of SOLSIC is to develop bulk cubic Sic crystals and waters to update cubic SiC properties and process MOS demonstrator devices.

Meccanismo di finanziamento

CSC - Cost-sharing contracts

Coordinatore

COMMISSARIAT A L'ENERGIE ATOMIQUE
Indirizzo
Rue Des Martyrs 17
38054 Grenoble
Francia

Partecipanti (8)

ACREO AB.
Svezia
Indirizzo
Electrum 236
Electrum 236 Kista
ARISTOTLE UNIVERSITY OF THESSALONIKI
Greece
Indirizzo
University Campus
54006 Thessaloniki
BRITISH CERAMIC RESEARCH LTD.
United Kingdom
Indirizzo
Queens Road, Penkhull
ST4 7LQ Stoke-on-trent
CYBERSTAR S.A.
Francia
Indirizzo
Parc Sud Galaxie - Rue Des Tropiques 1
38435 Echirolles
FORSCHUNGSVERBUND BERLIN E.V.
Germania
Indirizzo
Rüdower Chaussee 6 Geb. 18.46 - 17
12489 Berlin
NOVASIC S.A.
Francia
Indirizzo
Savoie Technolac - Arche Bèt.4
73375 Le Bourget Du Lac
UNIVERSITE DE MONTPELLIER II - SCIENCES ET TECHNIQUES DU LANGUEDOC
Francia
Indirizzo
Place Eugène Bataillon
34095 Montpellier
UNIVERSITY OF ERLANGEN-NUREMBERG
Germania
Indirizzo
Staudtstrasse 7 - Building A3
91058 Erlangen