The growing SiC market requires low cost, high quality and large area SiC wafers due to its outstanding potential for microelectronical and biomedical applications at high temperatures and in harsh environments. Currently, the market is dominated by one US company CREE producing 4/6H-SiC wafers with high cost and low mobility. The FLASiC-project will develop a new process to produce epitaxial and bulk 3C-SiC on Si or SOI substrates. To take advantage of a higher mobility, larger size and lower costs of this new material the defect density has to be reduced by several orders of magnitude. This will be reached by high energy absorption at the heteroepitaxial interface using Flash Lamp Annealing in ms range. The development of basic features of a new SiC-wafer technology is expected as well as contributions to the physical properties of 3C-SiC and the theoretical understanding of the formation process. The success of this project will bring Europe to a leading position on the SiC market.
Funding SchemeCSC - Cost-sharing contracts
01458 Ottendorf - Okrilla
01454 Weissig - Dresden
73375 Le Bourget Du Lac
CB2 1PZ Cambridge