Objective
The main objective of the proposal is the development of advanced high current SiC devices. The test SiC device structures will be fabricated by ion implantation and post-implanted anneals. In such structures both the low forward voltages and breakdown voltages near to theoretical values for given structures will be obtained.
Detailed investigation of starting SiC samples will be carried out for these purpose. The effect of different ion implanted and annealed parameters on structural, optical and electrical characteristics of SiC p-n structures will be investigated to fulfil the main goal of the project. Damage accumulation and its redistribution during ion implantation and post-implanted anneals will be elucidated. Low receptivity Ohmic contacts to n- and p-types SiC will be created.
A number of techniques will be used for investigation ion implanted SiC structures. We will demonstrate SiC device structures created by ion implantation with post-implanted anneals.
A new level of understanding the defect interactions in ion-irradiated silicon carbide is expected as result of the study. This will strongly promote future applications of silicon carbide devices in high-speed high power devices for more efficient energy conversion and transmission power systems.
Call for proposal
Data not availableFunding Scheme
Data not availableCoordinator
10044 Stockholm
Sweden