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CORDIS - Résultats de la recherche de l’UE
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Contenu archivé le 2022-12-23

Interface formation and modification by ion bombardment

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

Les liens vers les livrables et les publications des projets du 7e PC, ainsi que les liens vers certains types de résultats spécifiques tels que les jeux de données et les logiciels, sont récupérés dynamiquement sur OpenAIRE .

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This one year co-operation was successfully carried out by three Russian teams at the Nuclear Institute of the Moscow State University, one German team at the Max Planck Institut für Plasmaphysik in Garching, one French team at the Université Paul Sabatier in Toulouse and one Belgain team at the Université Libre de Bruxelles. Experiment and computer simulation with the TRIDYN code were performed in order to study the contribution of collision processes to the interface formation induced by 4-80 keV Cs ions incident on an amorphous silicon surface. The simulations show evidence for the fluence dependence of Cs range profiles and of the surface elevation (swelling) of the irradiated target. Range profiles become constant above some fluence whose value depends on the incidence conditions. In the experiment, saturation is traced by measuring the fluence dependence of the electron emission coefficient and is found to be of the same order as that found for simulated yields and ranges. Depth profiles are determined by TOF-spectroscopy in combination with qualitative agreement with simulation. In contrast, strong deviations are found at 4 keV which are attributed to surface Cs segregation. The comparison between modelling and experiment allows a discussion of the role of the surface binding energy for sputtering on the surface composition.

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