Interface formation and modification by ion bombardment

Informazioni relative al progetto

ID dell’accordo di sovvenzione: INTAS-93-2439

Progetto chiuso

Data di avvio 1 Gennaio 1995

Data di completamento 31 Dicembre 1995

Finanziato da

• International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993-

Costo totale

Nessun dato

Contributo UE

€ 20 000,00

Coordinato da

Université Libre de Bruxelles
Belgium

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Risultati sfruttabili

Interface formation and modification by ion bombardment

This one year co-operation was successfully carried out by three Russian teams at the Nuclear Institute of the Moscow State University, one German team at the Max Planck Institut für Plasmaphysik in Garching, one French team at the Université Paul Sabatier in Toulouse and one Belgain team at the Université Libre de Bruxelles. Experiment and computer simulation with the TRIDYN code were performed in order to study the contribution of collision processes to the interface formation induced by 4-80 keV Cs ions incident on an amorphous silicon surface. The simulations show evidence for the fluence dependence of Cs range profiles and of the surface elevation (swelling) of the irradiated target. Range profiles become constant above some fluence whose value depends on the incidence conditions. In the experiment, saturation is traced by measuring the fluence dependence of the electron emission coefficient and is found to be of the same order as that found for simulated yields and ranges. Depth profiles are determined by TOF-spectroscopy in combination with qualitative agreement with simulation. In contrast, strong deviations are found at 4 keV which are attributed to surface Cs segregation. The comparison between modelling and experiment allows a discussion of the role of the surface binding energy for sputtering on the surface composition.