Objective The project addresses the proof of an equipment concept suitable of producing ferroelectric layers based on chemical vapor deposition. This concept will be verified using an existing MOCVD reactor which is intended to be upgraded as a production tool for ferroelectric devices on 200mm silicon wafers. The project includes the development of optimised materials and processes to be used in the manufacturing of the new, promising FeRAM devices which are expected to serve as a "Universal RAM" since it combines high speed and non-volatility. Moreover, the processes used are designed for cost-effective implementation since they are compatible with existing mainstream silicon technology.OBJECTIVESFerroelectrics are very promising materials for a wide range of microelectronic applications. They can be used as the dielectric layers in universal memory devices (FeRAMs) combining the advantages of the fast but volatile dynamic memories (DRAMs) and non-volatile memories (e.g. EEPROMs). They also simplify the integration of capacitances in high-volume logic devices like telecom devices or chipcards. Alltogether, it is a market of billions of devices in applications for everyone. The project objective is to provide competitive materials, processes, and tools compatible with the specifications of the 0.18?m technology and beyond. The envisaged process sequence will provide improved device performances and will enable simplified devices and printed circuit board architectures.DESCRIPTION OF WORKThe layer properties, process, and the performance of the equipment will be specified based on the inputs from the "users" in the consortium. Focus will be put on the quality of the layers as well as on the durability. The equipment specifications will continuously be assessed with respect to the competitive situation. A MOCVD reactor available at the research institute will be equipped with a new vaporising unit for the liquid precursor materials. This TriJet (TM) vaporiser is used for the first time in 200mm silicon technology. It promises very good run-to-run reproducibility and a long-time stability. The control software of the deposition reactor has to be modified to integrate the new vaporiser unit in the control system and give an easy access to all hardware components for the deposition process. This modification will also improve the throughput of the module. Ferroelectric layers will be deposited on silicon substrates with different interface layers to optimise the deposition process with respect to the target specifications. Simple test devices will be prepared to demonstrate the basic functions and the compatibility with the required pre-processing and post-processing steps. Advanced layer and device characterisation tools are available for comprehensive assessment. Fields of science natural sciencescomputer and information sciencessoftwareengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringcontrol systemsnatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP5-IST - Programme for research, technological development and demonstration on a "User-friendly information society, 1998-2002" Topic(s) 2000-4.8.8 - Industrial microelectronic technologies: process, equipment -take-up Call for proposal Data not available Funding Scheme ACM - Preparatory, accompanying and support measures Coordinator FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. EU contribution No data Address HANSASTRASSE 27C 80686 MUENCHEN Germany See on map Total cost No data Participants (5) Sort alphabetically Sort by EU Contribution Expand all Collapse all AIXTRON AKTIENGESELLSCHAFT Germany EU contribution No data Address KACKERTSTRASSE 15-17 52072 AACHEN See on map Total cost No data AUSTRIAMICROSYSTEMS AG Austria EU contribution No data Address SCHLOSS PREMSTAETTEN, TOBELBADERSTRASSE 30 8141 UNTERPREMSTAETTEN See on map Total cost No data HUNGARIAN ACADEMY OF SCIENCES - RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE Hungary EU contribution No data Address KONKOLY THEGE UT 29-33 1121 BUDAPEST See on map Total cost No data INFINEON TECHNOLOGIES AG Germany EU contribution No data Address ST. MARTIN STRASSE 53 81609 MUENCHEN See on map Total cost No data MOTOROLA, INC., WILMINGTON Switzerland EU contribution No data Address ROUTE DE FERNEY 207 1218 LE GRAND-SACONNEX See on map Total cost No data
