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NANODEPOSITION OF ACTIVE ORDERED STRUCTURES BY COLD ATOMS TECHNOLOGIES

Objective

The primary aim is the development of atom lithography nanotechnologies based on the deposition of atoms focused by laser light. Final goal is the production of nanostructures in the 10 nm range. Crucial steps are:
1) Development of 10 nm depositions on the basis of a common atomic species, caesium;
2) Realisation of a flux-enhanced nanopencil;
3) Test of laser sources for group III atoms, indium and gallium;
4) Deposition of indium and gallium;
5) In-situ diagnostics;
6) Characterization of the surface processes defining the deposition limit size;
7) Fabrication of nanotechnology based devices, e.g; nanometer scale photo-detectors and electron-sources, nano-islands, 3-D photonic crystals. The primary aim is the development of atom lithography nanotechnologies based on the deposition of atoms focused by laser light. Final goal is the production of nanostructures in the 10 nm range. Crucial steps are:
1) Development of 10 nm depositions on the basis of a common atomic species, caesium;
2) Realisation of a flux-enhanced nanopencil;
3) Test of laser sources for group III atoms, indium and gallium;
4) Deposition of indium and gallium;
5) In-situ diagnostics;
6) Characterization of the surface processes defining the deposition limit size;
7) Fabrication of nanotechnology based devices, e.g; nanometer scale photo-detectors and electron-sources, nano-islands, 3-D photonic crystals.

OBJECTIVES
Main objective is the development, assessment and exploitation of the atom lithography technique for the fabrication of nanostructures in the ten nanometres range, for applications in information technology. Major theme is atom lithography of group III materials, as In and Ga, which will open an innovative approach based on the integration with well established deposition methods. Growth control at the atomic scale, regular spatial ordering, superior spatial definition, parallel operation, will be exploited in the fabrication of basic building blocks for innovative devices, to be used in space resolved photoemission, single electron devices, photonic crystals. Detailed experimental and theoretical analyses will be carried out in order to define advantages and limits of our process in view of industrial applications.

DESCRIPTION OF WORK
The primary goal is the development of nanotechnologies based on the deposition of atoms focused by laser light. The main objective to make progress towards the fabrication of basic elements relevant for electronics, optoelectronics and information technology applications. One major theme is the atom lithography of indium and gallium, two elements playing a major role in many technological applications. The structure and time-table of our Workplan reflects both the basic steps required to develop nanotechnologies in the 10 nm range and the application of these nanotechnologies to the production of devices.

The crucial steps in the proposed development of the technology are:
(i) development of 10 nm atom lithography on the basis of a common atomic species, caesium;
(ii) test of laser sources for group III atoms, indium and gallium;
(iii) atom lithography of indium and gallium;
(iv) characterisation of surface processes affecting the limit lateral size;
(v) fabrication of nanotechnology based devices.

The main structure of the Workplan, divided into 6 workpackages and 12 deliverables, follows the following scheme:
(i) In the first part of the project, research actions will be undertaken by the each partner in order to synergistically amplify the scientific and technological components needed for the project objectives. The consortium will push to the limit the atom lithography process of caesium atoms, while developing the required tools for handling different atomic species;
(ii) On the basis of the results achieved participants will define the optical mask configuration required for obtaining the narrowest nanostructures;
(iii) The technologically relevant materials will be used to fabricate several devices, and at the same time devices based on the caesium nanodeposition will be produced.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

ISTITUTO NAZIONALE PER LA FISICA DELLA MATERIA
Address
Corso F. Perrone 24
16152 Genova
Italy

Participants (4)

RHEINISCHE FRIEDRICH-WILHELMS-UNIVERSITAET BONN
Germany
Address
Regina-pacis-weg 3
53113 Bonn
UNIVERSITAET KASSEL
Germany
Address
Moenchenbergstrasse 19
34109 Kassel
UNIVERSITE BLAISE PASCAL
France
Address
34 Avenue Carnot
63006 Clermont-ferrand
UNIVERSITE PAUL SABATIER
France
Address
118, Route De Narbonne
31062 Toulouse