The general foal of this research is the preparation and characterisation of shallow P/N junctions realized by coupling non-analyzed ion implantation of the dopant (developed by PHASE laboratory) or any kind of deposition techniques with a special transient optical heating technique (developed by FhG-ISE) which can operate in the liquid and solid phase regime.
Research has been carried out with respect to the preparation and characterization of shallow P/N junctions realized by coupling nonanalyzed ion implantation of the dopant (or any kind of deposition technique) with a special transient optical heating technique which can operate in the liquid and solid phase regime.
Research was carried out in the following areas:
doping procedures (doped silicon presses);
transient annealing (rapid thermal processing in lamp furnaces);
characterization of the junction;
crossing comparison of the techniques;
solar cell manufacturing (15% efficiency for a single P/N junction).
Perspectives of a dry processing are being investigated in a new project.
The best result of this research was the realization of 15% conversion efficiency P/N junction silicon solar cells by employing a doping using doped silicon glasses to rapid thermal diffusion in a lamp furnace.
I. DOPING PROCEDURES
1) Deposition and diffusion techniques
2) Non-analyzed ion implantation
II. TRANSIENT ANNEALING
1) With a special optical heating system working in liquid as well as solid phase regime
2) In liquid phase by UV laser processing
3) In solid phase with an RTP furnace
III. CHARACTERIZATION OF THE JUNCTION
1) global and electrical profiling of the front doped layer
2) Effects of the transient annealing on the carrier transportation properties
IV. CROSSING COMPARISON OF THE TECHNIQUES
V. SOLAR CELL MANUFACTURING
VI. PERSPECTIVES OF A DRY PROCESSING
Funding SchemeCSC - Cost-sharing contracts
79110 Freiburg (In Breisgau)