Optical thermal processing for silicon solar cell manufacturing

Project Information

Grant agreement ID: JOUR0096

Project closed

Start date 1 October 1990

End date 31 March 1993

Funded under

• Specific research and technological development programme (EEC) in the field of energy - non-nuclear energies and rational use of energy - (JOULE), 1989-1992

Total cost

No data

EU contribution

No data

Coordinated by

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France

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Exploitable results

Solar cell manufacture: optical thermal processing

Research has been carried out with respect to the preparation and characterization of shallow P/N junctions realized by coupling nonanalyzed ion implantation of the dopant (or any kind of deposition technique) with a special transient optical heating technique which can operate in the liquid and solid phase regime. Research was carried out in the following areas: doping procedures (doped silicon presses); transient annealing (rapid thermal processing in lamp furnaces); characterization of the junction; crossing comparison of the techniques; solar cell manufacturing (15% efficiency for a single P/N junction). Perspectives of a dry processing are being investigated in a new project. The best result of this research was the realization of 15% conversion efficiency P/N junction silicon solar cells by employing a doping using doped silicon glasses to rapid thermal diffusion in a lamp furnace.