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New developments in optical spectroscopy for the chararacterisation of semi-conductor devices

Objective



The aim of this project is to develop a new instrumentation based on Raman or luminescence spectroscopy in order to provide the microelectronics industry (highly integrated silicon technology and high-power electronics or opto-electronics) with an advanced non-destructive characterization; tool. A generic methodology for the characterization of devices in production environment using the pronosed instrumentation will be established. We will demonstrate the validity of this approach on :
* The measurement of local operating temperatures on high power electronic (microwave transistors) and optical (laser diodes) GaAs devices fabricated at Thomson-CSF and Daimler-Benz.
* The measurement of local stress in sub-micron Si devices fabricated at IMEC.
The project is governed by three objectives :
* The different techniques available necessary to completely characterize the device (operating parameters, materials characterization) will be associated in a single instrument.
* Ultimate performances of the instrument in terms of spatial resolution and adaptation to the real problems will be evaluated.
* A complete methodology for analysis will be developped.

Funding Scheme

CSC - Cost-sharing contracts

Coordinator

Développement Instrumental en Liaison avec les Organismes de Recherche
Address
Rue Des Bois Blancs
59000 Lille
France

Participants (5)

Daimler-Benz AG
Germany
Address
11,
89013 Ulm
INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW
Belgium
Address
75,Kapeldreef 75
3001 Heverlee
NATIONAL RESEARCH COUNCIL OF ITALY
Italy
Address
Parco Area Delle Scienze 37/A
43010 Fontevivo
Thomson-CSF
France
Address
Domaine De Corbeville
91404 Orsay
UNIVERSIDAD DE VALLADOLID
Spain
Address
S/n,c/dr. Mergelina S/n
47011 Valladolid